E. Ahmad | Searcharxiv

arXiv2009

Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures

We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the magnetic reversal takes place via a combination of coherent rotation and domain wall propagation with the domain wall positioned at the corner of the device at intermediate stages of the magnetic hysteresis loops. The domain wall energy can be extracted from our analysis. Such devices have found implementation in studies of current induced domain wall motion and have the potential for application as non-volatile memory elements.

cond-mat.mtrl-sci↗

arXiv2008

Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures

We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide microscopic understanding of the measured effect. Electrically induced magnetization switching and detection of unconventional crystalline components of the anisotropic magnetoresistance are presented, illustrating the generic utility of the piezo voltage control to provide new device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.

cond-mat.mtrl-sci↗