arXiv subjects

E. Alagoz

Publications and source records attributed to E. Alagoz.

3 recordsLinked to original sources

arXiv2014

Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors

The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented.

physics.ins-det↗

arXiv2006

Sensor Simulation and position calibration for the CMS pixel detector

In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Phi=5.9x10^14 n/cm^2 a position resolution below 15 um can be achieved after calibration.

physics.ins-det↗

arXiv2005

Simulation and hit reconstruction of irradiated pixel sensors for the CMS experiment

In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on the position determination and optimize the hit reconstruction algorithms. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The simulation shows that a position resolution below 15 $μ$m along the CMS $r-ϕ$ plane can be achieved after an irradiation fluence of $5.9\times10^{14}$ n$_{\rm{eq}}/$cm$^2$. In addition, we show that systematic errors in the position determination can be largely reduced by applying $η$ corrections.

physics.ins-det↗