arXiv subjects

E. Enrico

Publications and source records attributed to E. Enrico.

15 recordsLinked to original sources

arXiv2025

Programmable Microwave Cluster States via Josephson Metamaterials

Cluster states are a fundamental resource for continuous-variable quantum computing, enabling measurement-based protocols that can scale beyond the limitations of qubit-based architectures. Here, we demonstrate on-demand generation of multimode entangled microwave cluster states using a programmable Josephson Traveling-Wave Parametric Amplifier (JTWPA) operated in the three-wave mixing regime. By injecting a tailored, non-equidistant set of pump tones via an arbitrary waveform generator, we engineer frequency-specific nonlinear couplings between multiple frequency modes. The entanglement structure is verified via frequency-resolved heterodyne detection of quadrature nullifiers, confirming the target graph topology of the cluster state. Our approach allows reconfigurability through the pumps spectrum and supports scalability by leveraging the wide bandwidth and spatial homogeneity of the JTWPA. This platform opens new avenues for scalable measurement-based quantum information processing in the microwave domain, compatible with superconducting circuit architectures.

quant-ph↗

arXiv2022

Progress in the development of a KITWPA for the DARTWARS project

DARTWARS (Detector Array Readout with Traveling Wave AmplifieRS) is a three years project that aims to develop high-performing innovative Traveling Wave Parametric Amplifiers (TWPAs) for low temperature detectors and qubit readout (C-band). The practical development follows two different promising approaches, one based on the Josephson junctions (TWJPA) and the other one based on the kinetic inductance of a high-resistivity superconductor (KITWPA). This paper presents the advancements made by the DARTWARS collaboration to produce a first working prototype of a KITWPA.

quant-ph↗

arXiv2022

Ultra low noise readout with travelling wave parametric amplifiers: the DARTWARS project

The DARTWARS project has the goal of developing high-performing innovative travelling wave parametric amplifiers with high gain, large bandwidth, high saturation power, and nearly quantum-limited noise. The target frequency region for its applications is 5 - 10 GHz, with an expected noise temperature of about 600 mK. The development follows two different approaches, one based on Josephson junctions and one based on kinetic inductance of superconductors. This contribution mainly focuses on the Josephson travelling wave parametric amplifier, presenting its design, preliminary measurements and the test of homogeneity of arrays of Josephson junctions.

quant-ph↗

arXiv2021

Bimodal Approach for Noise Figures of Merit Evaluation in Quantum-Limited Josephson Traveling Wave Parametric Amplifiers

The advent of ultra-low noise microwave amplifiers revolutionized several research fields demanding quantum-limited technologies. Exploiting a theoretical bimodal description of a linear phase-preserving amplifier, in this contribution we analyze some of the intrinsic properties of a model architecture (i.e., an rf-SQUID based Josephson Traveling Wave Parametric Amplifier) in terms of amplification and noise generation for key case study input states (Fock and coherents). Furthermore, we present an analysis of the output signals generated by the parametric amplification mechanism when thermal noise fluctuations feed the device.

cond-mat.supr-con↗

arXiv2021

Detector Array Readout with Traveling Wave Amplifiers

Noise at the quantum limit over a large bandwidth is a fundamental requirement for future applications operating at millikelvin temperatures, such as the neutrino mass measurement, the next-generation x-ray observatory, the CMB measurement, the dark matter and axion detection, and the rapid high-fidelity readout of superconducting qubits. The read out sensitivity of arrays of microcalorimeter detectors, resonant axion-detectors, and qubits, is currently limited by the noise temperature and bandwidth of the cryogenic amplifiers. The DARTWARS (Detector Array Readout with Traveling Wave AmplifieRS) project has the goal of developing high-performing innovative traveling wave parametric amplifiers (TWPAs) with a high gain, a high saturation power, and a quantum-limited or nearly quantum-limited noise. The practical development follows two different promising approaches, one based on the Josephson junctions and the other one based on the kinetic inductance of a high-resistivity superconductor. In this contribution we present the aims of the project, the adopted design solutions and preliminary results from simulations and measurements.

cond-mat.supr-con↗

arXiv2017

Current Induced Resistive State in Fe(Se,Te) Superconducting Nanobridges

We study the current-voltage characteristics of Fe(Se,Te) thin films deposited on CaF$_2$ substrates in form of nanostrips (width $w\simλ$, $λ$ the London penetration length). In view of a possible application of these materials to superconductive electronics and micro-electronics we focus on transport properties in small magnetic field, the one generated by the bias current. From the characteristics taken at different temperatures we derive estimates for the pinning potential $U$ and the pinning potential range $δ$. Since the sample lines are very narrow, the classical creep flow model provides a sufficiently accurate interpretation of the data only when the attractive interaction between magnetic flux lines of opposite sign is taken into account. The observed voltages and the induced detriment of the critical current of the nanostrips are compatible with the presence of few tens of magnetic field lines at the equilibrium and a strongly inhomogeneous current density distribution. In particular, we argue that the sharp corners defining the bridge geometry represent points of easy magnetic flux lines injection. The results are relevant for creep flow analysis in superconducting Fe(Se,Te) nanostrips.

cond-mat.supr-con↗

arXiv2016

Effects of high-power laser irradiation on sub-superficial graphitic layers in single crystal diamond

We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of MeV ion implantation. A systematic characterization of the structures obtained under different laser irradiation conditions (power density, number of pulses) and subsequent thermal annealing was performed by different electron microscopy techniques. The main feature observed after laser irradiation is the thickening of the pre-existing graphitic layer. Cross sectional SEM imaging was performed to directly measure the thickness of the modified layers, and subsequent selective etching of the buried layers was employed to both assess their graphitic nature and enhance the SEM imaging contrast. In particular, it was found that for optimal irradiation parameters the laser processing induces a six-fold increase the thickness of sub superficial graphitic layers without inducing mechanical failures in the surrounding crystal. TEM microscopy and EELS spectroscopy allowed a detailed analysis of the internal structure of the laser irradiated layers, highlighting the presence of different nano graphitic and amorphous layers. The obtained results demonstrate the effectiveness and versatility of high-power laser irradiation for an accurate tuning of the geometrical and structural features of graphitic structures embedded in single crystal diamond, and open new opportunities in diamond fabrication.

cond-mat.mtrl-sci↗

arXiv2016

Characterization of the recovery of mechanical properties of ion-implanted diamond after thermal annealing

Due to their outstanding mechanical properties, diamond and diamond-like materials find significant technological applications ranging from well-established industrial fields (cutting tools, coatings, etc.) to more advanced mechanical devices as micro- and nano-electromechanical systems. The use of energetic ions is a powerful and versatile tool to fabricate three-dimensional micro-mechanical structures. In this context, it is of paramount importance to have an accurate knowledge of the effects of ion-induced structural damage on the mechanical properties of this material, firstly to predict potential undesired side-effects of the ion implantation process, and possibly to tailor the desired mechanical properties of the fabricated devices. We present an Atomic Force Microscopy (AFM) characterization of free-standing cantilevers in single-crystal diamond obtained by a FIB-assisted lift-off technique, which allows a determination of the Young's modulus of the diamond crystal after the MeV ion irradiation process concurrent to the fabrication of the microstructures, and subsequent thermal annealing. The AFM measurements were performed with the beam-bending technique and show that the thermal annealing process allows for an effective recovery of the mechanical properties of the pristine crystal.

cond-mat.mtrl-sci↗

arXiv2016

Single-photon emitters based on NIR colour centres in diamond coupled with solid immersion lenses

Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centres emitting in the Near Infra-Red. In the present work, we report on the coupling of native near-infrared-emitting centres in high-quality single crystal diamond with Solid Immersion Lens structures fabricated by Focused Ion Beam lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.

cond-mat.mtrl-sci↗

arXiv2016

Development and characterization of a diamond-insulated graphitic multi electrode array realized with ion beam lithography

The detection of quantal exocytic events from neurons and neuroendocrine cells is a challenging task in neuroscience. One of the most promising platforms for the development of a new generation of biosensors is diamond, due to its biocompatibility, transparency and chemical inertness. Moreover, the electrical properties of diamond can be turned from a perfect insulator into a conductive material (resistivity Ohm cm) by exploiting the metastable nature of this allotropic form of carbon. A 16 channels MEA (Multi Electrode Array) suitable for cell culture growing has been fabricated by means of ion implantation. A focused 1.2 MeV He+ beam was scanned on a IIa single-crystal diamond sample (4.5x4.5x0.5 mm3) to cause highly damaged sub-superficial structures that were defined with micrometric spatial resolution. After implantation, the sample was annealed. This process provides the conversion of the sub-superficial highly damaged regions to a graphitic phase embedded in a highly insulating diamond matrix. Thanks to a three-dimensional masking technique, the endpoints of the sub-superficial channels emerge in contact with the sample surface, therefore being available as sensing electrodes. Cyclic voltammetry and amperometry measurements of solutions with increasing concentrations of adrenaline were performed to characterize the biosensor sensitivity. The reported results demonstrate that this new type of biosensor is suitable for in vitro detection of catecholamine release.

physics.ins-det↗

arXiv2016

Electrical control of deep NV centers in diamond by means of sub-superficial graphitic micro-electrodes

The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-electrodes with spacing of 9 μm were created in single-crystal diamond substrates by means of a 6 MeV C scanning micro-beam. The high breakdown field of diamond was exploited to electrically control the variation in the relative population of the negative (NV-) and neutral (NV0) charge states of sub-superficial NV centers located in the inter- electrode gap regions, without incurring into current discharges. Photoluminescence spectra acquired from the biased electrodes exhibited an electrically induced increase up to 40% in the NV- population at the expense of the NV0 charge state. The variation in the relative charge state populations showed a linear dependence from the injected current at applied biases smaller than 250 V, and was interpreted as the result of electron trapping at NV sites, consistently with the Space Charge Limited Current interpretation of the abrupt current increase observed at 300 V bias voltage. In correspondence of such trap-filling-induced transition to a high-current regime, a strong electroluminescent emission from the NV0 centers was observed. In the high-current-injection regime, a decrease in the NV- population was observed, in contrast with the results obtained at lower bias voltages. These results disclose new possibilities in the electrical control of the charge state of NV centers located in the diamond bulk, which are characterized by longer spin coherence times.

physics.optics↗

arXiv2016

Superconducting Quantum Interference Single-Electron Transistor

We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the density of states of a nanosized metallic wire can be exploited as an efficient tunable energy barrier which enables charge pumping configurations with enhanced functionalities. This control parameter strongly affects the charging landscape of a normal metal island with non-negligible Coulombic energy. Under a suitable evolution of a time-dependent magnetic flux the structure behaves likewise a turnstile for single electrons in a fully electrostatic regime.

cond-mat.mes-hall↗

arXiv2015

Electroluminescence from nitrogen-vacancy and interstitial-related centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial graphitic micro-electrodes

We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication.

cond-mat.mtrl-sci↗

arXiv2014

Electrical stimulation of single-photon emission from nitrogen-vacancy centers in diamond with sub-superficial graphitic electrodes

Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs with a spacing of 10 $μ$m were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current above an effective voltage threshold of 150V, which was interpreted according to the theory of Space Charge Limited Current. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced bright electroluminescent emission from native neutrally-charged nitrogen-vacancy centers ($NV^0$); the acquired spectra highlighted the absence of EL associated with radiation damage.

cond-mat.mtrl-sci↗

arXiv2014

Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes

Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of colour centres in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the colour centres. With this purpose, buried graphitic electrodes with a spacing of 10 micrometers were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He micro-beam. The current flowing in the gap region between the electrodes upon the application of a 250 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of colour centres localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centres ($NV^0$, $λ_{ZPL}$ = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400-500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected ($λ_{ZPL}$ = 536.3 nm, $λ_{ZPL}$ = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centres. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.

cond-mat.mtrl-sci↗