arXiv subjects

E. G. Novik

Publications and source records attributed to E. G. Novik.

At least 19 recordsLinked to original sources

arXiv2025

Universal transparency and fine band structure near the Dirac point in HgTe quantum wells

Spin-orbit coupling in thin HgTe quantum wells results in a relativistic-like electron band structure, making it a versatile solid state platform to observe and control non-trivial electrodynamic phenomena. Here we report an observation of universal terahertz (THz) transparency determined by fine-structure constant $α\approx 1/137$ in 6.5 nm-thick HgTe layer, close to the critical thickness separating phases with topologically different electronic band structure. Using THz spectroscopy in magnetic field we obtain direct evidence of asymmetric spin splitting of the Dirac cone. This particle-hole asymmetry facilitates optical control of edge spin currents in the quantum wells.

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arXiv2024

Fraunhofer pattern in the presence of Majorana zero modes

We propose a new platform to detect signatures of the presence of Majorana bound states (MBSs) in the Fraunhofer pattern of Josephson junctions featuring quantum spin Hall edge states on the normal part and Majorana bound states at the NS interfaces. We use a tight-binding model to demonstrate a drastic change in the periodicity of the Fraunhofer pattern when comparing trivial and non-trivial regimes. We explain these results in terms of the presence of additional parallel-spin electron-hole reflections, which due to the spin-momentum locking, occur as cross Andreev reflections, accumulating a different magnetic flux and yielding a change in the Fraunhofer periodicity. We show that this detection scheme exhibits some advantages compared to previous ones as it is robust against disorder, finite temperature and works in equilibrium. Furthermore, we introduce a scattering model that captures the main results of the microscopic calculations with MBSs and extend our discussion to the main differences found using accidental zero energy ABSs.

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arXiv2020

Band structure of a HgTe-based three-dimensional topological insulator

From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the $\mathbf{k\cdot p}$ model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.

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arXiv2020

Transport signatures of a quantum spin Hall - chiral topological superconductor junction

We investigate transport through a normal-superconductor (NS) junction made from a quantum spin Hall (QSH) system with helical edge states and a two-dimensional (2D) chiral topological superconductor (TSC) having a chiral Majorana edge mode. We employ a two-dimensional extended four-band model for HgTe-based quantum wells in a magnetic (Zeeman) field and subject to s-wave superconductivity. We show using the Bogoliubov-de Gennes scattering formalism that this structure provides a striking transport signal of a 2D TSC. As a function of the sample width (or Fermi energy) the conductance resonances go through a sequence of $2e^2/h$ (non-trivial phase) and $4e^2/h$ plateaux (trivial phase) which fall within the region of a non-zero Chern number (2D limit) as the sample width becomes large. These signatures are a manifestation of the topological nature of the QSH effect and the TSC.

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arXiv2019

Voltage-tunable Majorana bound states in time-reversal symmetric bilayer quantum spin Hall hybrid systems

We investigate hybrid structures based on a bilayer quantum spin Hall system in proximity to an s-wave superconductor as a platform to mimic time-reversal symmetric topological superconductors. In this bilayer setup, the induced pairing can be of intra- or inter-layer type, and domain walls of those different types of pairing potentials host Kramers partners (time-reversal conjugate pairs) of Majorana bound states. Interestingly, we discover that such topological interfaces providing Majorana bound states can also be achieved in an otherwise homogeneous system by a spatially dependent inter-layer gate voltage. This gate voltage causes the relative electron densities of the two layers to vary accordingly which suppresses the inter-layer pairing in regions with strong gate voltage. We identify particular transport signatures (zero-bias anomalies) in a five-terminal setup that are uniquely related to the presence of Kramers pairs of Majorana bound states.

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arXiv2017

Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented in a genuine scale form both for PPT regions and for VRH regime. Estimations for the degree of the carrier localization length divergence reveal a decisive role of the long-range random potential (the potential of remote ionized impurities) in the localization - delocalization processes in the QH regime for the system under study.

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arXiv2015

Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe

We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands than in known HgTe single quantum wells (QW), which may be regulated by an applied gate voltage $V_g$. This large overlap manifests itself in a much higher critical field $B_c$ separating the range above it where the quantum peculiarities shift linearly with $V_g$ and the range below with a complicated behavior. In the latter case the $N$-shaped and double-$N$-shaped structures in the Hall magnetoresistance $ρ_{xy}(B)$ are observed with their scale in field pronouncedly enlarged as compared to the pictures observed in an analogous single QW. The coexisting electrons and holes were found in the whole investigated range of positive and negative $V_g$ as revealed from fits to the low-field $N$-shaped $ρ_{xy}(B)$ and from the Fourier analysis of oscillations in $ρ_{xx}(B)$. A peculiar feature here is that the found electron density $n$ remains almost constant in the whole range of investigated $V_g$ while the hole density $p$ drops down from the value a factor of 6 larger than $n$ at extreme negative $V_g$ to almost zero at extreme positive $V_g$ passing through the charge neutrality point. We show that this difference between $n$ and $p$ stems from an order of magnitude larger density of states for holes in the lateral valence band maxima than for electrons in the conduction band minimum. We interpret the observed reentrant sign-alternating $ρ_{xy}(B)$ between electronic and hole conductivities and its zero resistivity state in the quantum Hall range of fields on the basis of a calculated picture of magnetic levels in a DQW.

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arXiv2014

Bulk transport through superconducting hybrid structures in HgTe quantum wells

We investigate the subgap bulk transport through short and wide superconducting hybrid structures based on HgTe quantum wells (QWs). We show that the differential conductance of a normal metal-insulator-superconductor (NIS) proximity structure behaves in a qualitatively different way with respect to the topological phase of the HgTe QW. We compare the differential conductance for the NIS structure within the wave-matching method based on the Bogoliubov-de Gennes equation and the matrix method based on the normal-state scattering matrix and find that the two models agree for highly-doped N and S contacts. We also show that the effect of a possible Rashba spin-orbit interaction on the differential conductance can be significant for weakly doped N and S contacts. Our findings should be important in samples with a large aspect ratio where bulk contributions in transport are dominant.

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arXiv2012

Reentrant topological phases in Mn-doped HgTe quantum wells

Quantum wells of HgTe doped with Mn display the quantum anomalous Hall effect due to the magnetic moments of the Mn ions. In the presence of a magnetic field, these magnetic moments induce an effective nonlinear Zeeman effect, causing a nonmonotonic bending of the Landau levels. As a consequence, the quantized (spin) Hall conductivity exhibits a reentrant behavior as one increases the magnetic field. Here, we will discuss the appearance of different types of reentrant behavior as a function of Mn concentration, well thickness, and temperature, based on the qualitative form of the Landau-level spectrum in an effective four-band model.

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arXiv2011

Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

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arXiv2010

Fine structure of "zero-mode" Landau levels in HgTe/HgCdTe quantum wells

HgTe/HgCdTe quantum wells with the inverted band structure have been probed using far infrared magneto-spectroscopy. Realistic calculations of Landau level diagrams have been performed to identify the observed transitions. Investigations have been greatly focused on the magnetic field dependence of the peculiar pair of "zero-mode" Landau levels which characteristically split from the upper conduction and bottom valence bands, and merge under the applied magnetic field. The observed avoided crossing of these levels is tentatively attributed to the bulk inversion asymmetry of zinc blend compounds.

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arXiv2010

Single valley Dirac fermions in zero-gap HgTe quantum wells

Dirac fermions have been studied intensively in condensed matter physics in recent years. Many theoretical predictions critically depend on the number of valleys where the Dirac fermions are realized. In this work, we report the discovery of a two dimensional system with a single valley Dirac cone. We study the transport properties of HgTe quantum wells grown at the critical thickness separating between the topologically trivial and the quantum spin Hall phases. At high magnetic fields, the quantized Hall plateaus demonstrate the presence of a single valley Dirac point in this system. In addition, we clearly observe the linear dispersion of the zero mode spin levels. Also the conductivity at the Dirac point and its temperature dependence can be understood from single valley Dirac fermion physics.

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arXiv2010

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.

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arXiv2009

Signatures of topology in ballistic bulk transport of HgTe quantum wells

We calculate bulk transport properties of two-dimensional topological insulators based on HgTe quantum wells in the ballistic regime. Interestingly, we find that the conductance and the shot noise are distinctively different for the so-called normal regime (the topologically trivial case) and the so-called inverted regime (the topologically non-trivial case). Thus, it is possible to verify the topological order of a two-dimensional topological insulator not only via observable edge properties but also via observable bulk properties. This is important because we show that under certain conditions the bulk contribution can dominate the edge contribution which makes it essential to fully understand the former for the interpretation of future experiments in clean samples.

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arXiv2009

Optical manipulation of edge state transport in HgTe quantum wells in the quantum hall regime

We investigate an effective low energy theory of HgTe quantum wells near their mass inversion thickness in a perpendicular magnetic field. By comparison of the effective band structure with a more elaborated and well-established model, the parameter regime and the validity of the effective model is scrutinized. Optical transitions in HgTe quantum wells are analyzed. We find selection rules which we functionalize to optically manipulate edge state transport. Qualitatively, our findings equally apply to optical edge current manipulation in graphene.

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arXiv2009

Nonlinear magneto-gyrotropic photogalvanic effect

We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is observed in quantum wells with the inverted band structure only. The experimental data are discussed in terms of both the phenomenological theory and microscopic models.

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arXiv2008

Ballistic Intrinsic Spin-Hall Effect in HgTe Nanostructures

We report the first electrical manipulation and detection of the mesoscopic intrinsic spin-Hall effect (ISHE) in semiconductors through non-local electrical measurement in nano-scale H-shaped structures built on high mobility HgTe/HgCdTe quantum wells. By controlling the strength of the spin-orbit splittings and the n-type to p-type transition by a top-gate, we observe a large non-local resistance signal due to the ISHE in the p-regime, of the order of kOhms, which is several orders of magnitude larger than in metals. In the n-regime, as predicted by theory, the signal is at least an order of magnitude smaller. We verify our experimental observation by quantum transport calculations which show quantitative agreement with the experiments.

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arXiv2006

Sequential and co-tunneling behavior in the temperature-dependent thermopower of few-electron quantum dots

We have studied the temperature dependent thermopower of gate-defined, lateral quantum dots in the Coulomb blockade regime using an electron heating technique. The line shape of the thermopower oscillations depends strongly on the contributing tunneling processes. Between 1.5 K and 40 mK a crossover from a pure sawtooth- to an intermitted sawtooth-like line shape is observed. The latter is attributed to the increasing dominance of cotunneling processes in the Coulomb blockade regime at low temperatures.

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