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E. H. C. P. Sinnecker

Publications and source records attributed to E. H. C. P. Sinnecker.

2 recordsLinked to original sources

Enhanced superconductivity, Kondo behavior and negative-curvature resistivity of oxygen-irradiated thin films of aluminium

We followed the evolution of the normal and superconducting properties of Al thin films after each session of various successive oxygen irradiations at ambient temperature. Such irradiated films, similar to the granular ones, exhibit enhanced superconductivity, Kondo behavior and negative-curvature resistivity. Two distinct roles of oxygen are identified: as a damage-causing projectile and as an implanted oxidizing agent. The former gives rise to the processes involved in the conventional recovery stages. The latter, considered within the context of the Cabrera-Mott model, gives rise to a multistep process which involves charges transfer and creation of stabilized vacancies and charged defects. Based on the outcome of this multistep process, we consider (i) the negative curvature resistivity as a manifestation of a thermally-assisted liberation of trapped electric charges, (ii) the Kondo contribution as a spin-flip scattering from paramagnetic, color-center-type defects, and (iii) the enhancement of T_{c} as being due to a lattice softening facilitated by the stabilized defects and vacancies. The similarity in the phase diagrams of granular and irradiated films as well as the aging effects are discussed along the same line of reasoning.

cond-mat.supr-con↗

Ion-beam modification of the magnetic properties of GaMnAs epilayers

We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown GaMnAs films and decreasing even further the number of carriers, through a sequence of irradiation doses. We did a systematic study of magnetization as a function of temperature and of the irradiation ion dose. We also performed in-situ room temperature resistivity measurements as a function of the ion dose. We observe that both magnetic and transport properties of the samples can be experimentally manipulated by controlling the ion-beam parameters. For highly irradiated samples, the magnetic measurements indicate the formation of magnetic clusters together with a transition to an insulating state. The experimental data are compared with mean-field calculations for magnetization. The independent control of disorder and carrier density in the calculations allows further insight on the individual role of this two factors in the ion-beam-induced modification of GaMnAs.

cond-mat.dis-nn↗