arXiv subjects

E. J. H. Lee

Publications and source records attributed to E. J. H. Lee.

7 recordsLinked to original sources

arXiv2026

Ultrastrong Coupling and Coherent Dynamics in a Gate-Tunable Transmon Qubit

Ultrastrong light-matter coupling (USC) gives access to exotic quantum phenomena and promises faster quantum gates, yet coherent time-domain control in this regime remains largely unexplored. Here, we realize USC in a hybrid system consisting of an InAs nanowire-based gatemon qubit coupled to a superconducting resonator. Spectroscopy reveals an avoided crossing that cannot be captured by the Jaynes-Cummings (JC) model, as well as photon-number-dependent transitions whose energies deviate markedly from the JC ladder expected in the strong coupling regime. Beyond demonstrating USC, we achieve time-resolved coherent control of the qubit and measure coherence times comparable to gatemons operating outside the USC regime. These results establish that hybrid semiconductor-superconductor qubits can retain coherent control in USC and provide a platform for exploring quantum dynamics and device concepts in this regime.

cond-mat.mes-hall↗

arXiv2025

Anomalous metallic phase and reduced critical current in superconducting nanowires due to inverse proximity effect

Superconductor-to-metal transitions (SMTs) are key probes of mesoscopic superconductivity, but their interpretation can be complicated by device geometry and measurement conditions. Here, we study epitaxial InAs-Al nanowires and show that metallic contacts induce an inverse proximity effect (IPE), creating weak spots in the superconductor that strongly suppress the critical current and give rise to an anomalous metallic phase. Using transport measurements supported by Usadel theory, we demonstrate that this phase originates from the contact-induced weakening of superconductivity together with Joule heating, rather than intrinsic material properties. Our findings reveal an overlooked observer effect in mesoscopic superconductors and provide essential guidance for interpreting SMTs and for designing devices based on these systems.

cond-mat.mes-hall↗

arXiv2025

Thermoelectric processes of quantum normal-superconductor interfaces

Superconducting interfaces have recently been demonstrated to contain a rich variety of effects that give rise to sizable thermoelectric responses and unexpected thermal properties, despite traditionally being considered poor thermoelectrics due to their intrinsic electron-hole symmetry. We review different mechanisms driving this response in hybrid normal-superconducting junctions, depending on the dimensionality of the mesoscopic interface. In addition to discussing heat to power conversion, cooling and heat transport, special emphasis is put on physical properties of hybrid devices that can be revealed by the thermoelectric effect.

cond-mat.mes-hall↗

arXiv2018

Mirage Andreev spectra generated by mesoscopic leads in nanowire quantum dots

We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded spectrum is created. To describe the observations a model is developed that combines the effects of a soft induced gap and of additional Andreev bound states both in the quantum dot and in the finite regions of the nanowire adjacent to the quantum dot. Understanding of Andreev spectroscopy is important for the correct interpretation of Majorana experiments done on the same structures.

cond-mat.mes-hall↗

arXiv2018

Split-Channel Ballistic Transport in an InSb Nanowire

We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of $e^2$/h, yet we find a quantized conductance pattern largely dependent on the configuration of voltages applied to the bottom gates. In particular, we can make the first plateau disappear leaving a first conductance step of 2$e^2/h$, which is indicative of a remarkable two-fold subband degeneracy that can persist up to several Tesla. For certain gate voltage settings, we also observe the presence of discrete resonant states producing conductance features that can resemble those expected from the opening of a helical gap in the subband structure. We explain our experimental findings through the formation of two spatially separated 1D conduction channels.

cond-mat.mes-hall↗

arXiv2018

Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe approximately quantized conductance plateaus associated with the first two spin-polarized one-dimensional modes. For $B < 1$ T, the onset of superconductivity occurs in concomitance with the development of sizeable charge localization leading to a 0.7-type conductance anomaly. In this regime, the proximity supercurrent exhibits an unusual, non-monotonic $B$ dependence. We interpret this finding in terms of a competition between the Kondo effect, dominating near $B=0$, and the Zeeman effect, enforcing spin polarization and the emergence of a $π$ phase shift in the Josephson relation at higher $B$.

cond-mat.mes-hall↗

arXiv2007

Electronic Band Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy

Spatially resolved photocurrent measurements on carbon nanotube field-effect transistors (CNFETs) operated in various transport regimes are reported. It is demonstrated that the photocurrents measured at different biasing conditions provide access to the electronic band structure profile of the nanotube channel. A comparison of the profiles with the device switched into n- or p-type states clearly evidences the impact of chemical doping from the ambient. Moreover, we show that scanning photocurrent microscopy constitutes an effective and facile technique for the quantitative determination of the Schottky barrier height in such devices.

cond-mat.mtrl-sci↗