arXiv subjects

E. Jacquet

Publications and source records attributed to E. Jacquet.

At least 37 records · Page 2Linked to original sources

arXiv2024

The Data Acquisition System of the LZ Dark Matter Detector: FADR

The Data Acquisition System (DAQ) for the LUX-ZEPLIN (LZ) dark matter detector is described. The signals from 745 PMTs, distributed across three subsystems, are sampled with 100-MHz 32-channel digitizers (DDC-32s). A basic waveform analysis is carried out on the on-board Field Programmable Gate Arrays (FPGAs) to extract information about the observed scintillation and electroluminescence signals. This information is used to determine if the digitized waveforms should be preserved for offline analysis. The system is designed around the Kintex-7 FPGA. In addition to digitizing the PMT signals and providing basic event selection in real time, the flexibility provided by the use of FPGAs allows us to monitor the performance of the detector and the DAQ in parallel to normal data acquisition. The hardware and software/firmware of this FPGA-based Architecture for Data acquisition and Realtime monitoring (FADR) are discussed and performance measurements are described.

physics.ins-det↗

arXiv2024

Probing the Scalar WIMP-Pion Coupling with the first LUX-ZEPLIN data

Weakly interacting massive particles (WIMPs) may interact with a virtual pion that is exchanged between nucleons. This interaction channel is important to consider in models where the spin-independent isoscalar channel is suppressed. Using data from the first science run of the LUX-ZEPLIN dark matter experiment, containing 60 live days of data in a 5.5~tonne fiducial mass of liquid xenon, we report the results on a search for WIMP-pion interactions. We observe no significant excess and set an upper limit of $1.5\times10^{-46}$~cm$^2$ at a 90\% confidence level for a WIMP mass of 33~GeV/c$^2$ for this interaction.

hep-ex↗

arXiv2024

Constraints On Covariant WIMP-Nucleon Effective Field Theory Interactions from the First Science Run of the LUX-ZEPLIN Experiment

The first science run of the LUX-ZEPLIN (LZ) experiment, a dual-phase xenon time project chamber operating in the Sanford Underground Research Facility in South Dakota, USA, has reported leading limits on spin-independent WIMP-nucleon interactions and interactions described from a non-relativistic effective field theory (NREFT). Using the same 5.5~t fiducial mass and 60 live days of exposure we report on the results of a relativistic extension to the NREFT. We present constraints on couplings from covariant interactions arising from the coupling of vector, axial currents, and electric dipole moments of the nucleon to the magnetic and electric dipole moments of the WIMP which cannot be described by recasting previous results described by an NREFT. Using a profile-likelihood ratio analysis, in an energy region between 0~keV$_\text{nr}$ to 270~keV$_\text{nr}$, we report 90% confidence level exclusion limits on the coupling strength of five interactions in both the isoscalar and isovector bases.

hep-ex↗

arXiv2024

First Constraints on WIMP-Nucleon Effective Field Theory Couplings in an Extended Energy Region From LUX-ZEPLIN

Following the first science results of the LUX-ZEPLIN (LZ) experiment, a dual-phase xenon time projection chamber operating from the Sanford Underground Research Facility in Lead, South Dakota, USA, we report the initial limits on a model-independent non-relativistic effective field theory describing the complete set of possible interactions of a weakly interacting massive particle (WIMP) with a nucleon. These results utilize the same 5.5 t fiducial mass and 60 live days of exposure collected for the LZ spin-independent and spin-dependent analyses while extending the upper limit of the energy region of interest by a factor of 7.5 to 270 keVnr. No significant excess in this high energy region is observed. Using a profile-likelihood ratio analysis, we report 90% confidence level exclusion limits on the coupling of each individual non-relativistic WIMP-nucleon operator for both elastic and inelastic interactions in the isoscalar and isovector bases.

hep-ex↗

arXiv2024

New constraints on ultraheavy dark matter from the LZ experiment

Searches for dark matter with liquid xenon time projection chamber experiments have traditionally focused on the region of the parameter space that is characteristic of weakly interacting massive particles, ranging from a few GeV/$c^2$ to a few TeV/$c^2$. Models of dark matter with a mass much heavier than this are well motivated by early production mechanisms different from the standard thermal freeze-out, but they have generally been less explored experimentally. In this work, we present a re-analysis of the first science run (SR1) of the LZ experiment, with an exposure of $0.9$ tonne$\times$year, to search for ultraheavy particle dark matter. The signal topology consists of multiple energy deposits in the active region of the detector forming a straight line, from which the velocity of the incoming particle can be reconstructed on an event-by-event basis. Zero events with this topology were observed after applying the data selection calibrated on a simulated sample of signal-like events. New experimental constraints are derived, which rule out previously unexplored regions of the dark matter parameter space of spin-independent interactions beyond a mass of 10$^{17}$ GeV/$c^2$.

hep-ex↗

arXiv2020

Conductance switching at the nanoscale of diarylethene derivatives self-assembled monolayers on La$_{0.7}$Sr$_{0.3}$MnO$_3$

We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La0.7Sr0.3MnO3 (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topographic atomic force microscopy (AFM), ellipsometry, water contact angle and X-ray photoemission spectroscopy (XPS). The conducting AFM measurements show that the electrical conductance of LSMO/DDA is about 3 decades below that of the bare LSMO substrate. Moreover, the presence of the DDA SAM suppresses the known conductance switching of the LSMO substrate that is induced by mechanical and/or bias constraints during C-AFM measurements. A partial light-induced conductance switching between the open and closed forms of the DDA is observed for the LSMO/DDA/C-AFM tip molecular junctions (closed/open conductance ratio of about 8). We show that, in the case of long-time exposition to UV light, this feature can be masked by a non-reversible decrease (a factor of about 15) of the conductance of the LSMO electrode.

physics.app-ph↗

arXiv2019

Factors limiting ferroelectric field-effect doping in complex-oxide heterostructures

Ferroelectric field-effect doping has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a new class of field-effect devices. However, this potential is not fully exploited so far, since the size of the field-effect doping is generally much smaller than expected. Here we study the limiting factors through magneto-transport, scanning transmission electron and piezo-response force microscopy in ferroelectric/superconductor (YBa2Cu3O7-δ /BiFeO3) heterostructures, a model system showing very strong field-effects. Still, we find that they are limited in the first place by an incomplete ferroelectric switching. This can be explained by the existence of a preferential polarization direction set by the atomic terminations at the interface. More importantly, we also find that the field-effect carrier doping is accompanied by a strong modulation of the carrier mobility. Besides making quantification of field-effects via Hall measurements not straightforward, this finding suggests that ferroelectric poling produces structural changes (e.g. charged defects or structural distortions) in the correlated oxide channel. Those findings have important consequences for the understanding of ferroelectric field-effects and for the strategies to further enhance them.

cond-mat.mtrl-sci↗

arXiv2017

Tuning up or down the critical thickness in LaAlO3/SrTiO3 through in situ deposition of metal overlayers

The quasi 2D electron system (q2DES) that forms at the interface between LaAlO3 and SrTiO3 has attracted much attention from the oxide electronics community. One of its hallmark features is the existence of a critical LaAlO3 thickness of 4 unit-cells (uc) for interfacial conductivity to emerge. In this paper, the chemical, electronic, and transport properties of LaAlO3/SrTiO3 samples capped with different metals grown in a system combining pulsed laser deposition, sputtering, and in situ X-ray photoemission spectroscopy are investigated. The results show that for metals with low work function a q2DES forms at 1-2 uc of LaAlO3 and is accompanied by a partial oxidation of the metal, a phenomenon that affects the q2DES properties and triggers the formation of defects. In contrast, for noble metals, the critical thickness is increased above 4 uc. The results are discussed in terms of a hybrid mechanism that incorporates electrostatic and chemical effects.

cond-mat.mtrl-sci↗

arXiv2017

Structural, magnetic, and electronic properties of GdTiO3 Mott insulator thin films grown by pulsed laser deposition

We report on the optimization process to synthesize epitaxial thin films of GdTiO3 on SrLaGaO4 substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature TC = 31.8 K with a saturation magnetization of 4.2 muB per formula unit at 10 K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of 0.7 eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

cond-mat.str-el↗

arXiv2017

A high-temperature superconducting weak-link defined by ferroelectric field-effect

In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in the S. This leads either to an enhancement or a depression of its critical temperature depending on FE polarization direction.Here we exploit this effect at a local scale to define planar weak-links in high-temperature superconducting wires. This is realized in BiFeO3(FE)/YBa2Cu3O7(S)bilayers in which the remnant FE domain structure is written at will by locally applying voltage pulses with a conductive-tip atomic force microscope. In this fashion, the FE domain pattern defines a spatial modulation of superconductivity. This allows us to write a device whose electrical transport shows different temperature regimes and magnetic field matching effects that are characteristic of Josephson coupled weak-links. This illustrates the potential of the ferroelectric approach for the realization of high-temperature superconducting devices.

cond-mat.supr-con↗

arXiv2016

Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces

The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES.

cond-mat.mtrl-sci↗

arXiv2014

High-performance ferroelectric memory based on fully patterned tunnel junctions

In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e. fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching $10^{14}$ cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO$_3$/Ca$_{0.96}$Ce$_{0.04}$MnO$_3$ FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude ($4\times10^6$ cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications.

cond-mat.mes-hall↗

arXiv2013

Inverse Spin Hall Effect in nanometer-thick YIG/Pt system

High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for sub-micrometric thick films. We demonstrate Inverse spin Hall effect (ISHE) detection of propagating spin waves using Pt. The amplitude and the lineshape of the ISHE voltage correlate well to the increase of the Gilbert damping when decreasing thickness of YIG. Spin Hall effect based loss-compensation experiments have been conducted but no change in the magnetization dynamics could be detected.

cond-mat.mtrl-sci↗

arXiv2011

Multiferroic phase transition near room temperature in BiFeO3 films

In multiferroic BiFeO3 thin films grown on highly mismatched LaAlO3 substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and multiferroic properties. Notably, the highly distorted phase quasi-concomitantly presents an abrupt structural change, transforms from a hard to a soft ferroelectric and transitions from antiferromagnetic to paramagnetic at 360+/-20 K. These coupled ferroic transitions just above room temperature hold promises of giant piezoelectric, magnetoelectric and piezomagnetic responses, with potential in many applications fields.

cond-mat.mtrl-sci↗

arXiv2009

Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces

Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than ~6 10^13 cm-2. We discuss the experimental and simulations results in terms of a multi-band carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is ~16 nm, indicating that the electron gas in on the verge of two-dimensionality.

cond-mat.mtrl-sci↗

arXiv2008

Mapping the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO3/SrTiO3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO3 to a few nanometers next to the LaAlO3/SrTiO3 interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system.

cond-mat.mtrl-sci↗

arXiv2007

High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives

We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.

cond-mat.mtrl-sci↗

arXiv2006

Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (~60 Oe) exchange bias on a ferromagnetic film of CoFeB, at room temperature. Remarkably, the exchange bias effect is robust upon magnetic field cycling, with no indications of training.

cond-mat.str-el↗