arXiv subjects

E. M. Tolkacheva

Publications and source records attributed to E. M. Tolkacheva.

3 recordsLinked to original sources

arXiv2008

Single flux quantum circuits with damping based on dissipative transmission lines

We propose and demonstrate the functioning of a special Rapid Single Flux Quantum (RSFQ) circuit with frequency-dependent damping. This damping is achieved by shunting individual Josephson junctions by pieces of open-ended RC transmission lines. Our circuit includes a toggle flip-flop cell, Josephson transmission lines transferring single flux quantum pulses to and from this cell, as well as DC/SFQ and SFQ/DC converters. Due to the desired frequency-dispersion in the RC line shunts which ensures sufficiently low noise at low frequencies, such circuits are well-suited for integrating with the flux/phase Josephson qubit and enable its efficient control.

cond-mat.supr-con↗

arXiv2006

Self-shunted Al/AlOx/Al Josephson junctions

Self-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found to be of only small hysteresis with retrapping-to-switching current ratio of up to 80%. The observed critical currents were close to the Ambegaokar-Baratoff values (up to 80-100%). Good barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the self-shunted Al junctions promising for application in integrated RSFQ-qubit circuitry.

cond-mat.mes-hall↗

arXiv2005

Dynamics of Josephson junctions and single-flux-quantum networks with superconductor-insulator-normal metal junction shunts

Within the framework of the microscopic model of tunneling, we modelled the behavior of the Josephson junction shunted by the Superconductor-Insulator-Normal metal (SIN) tunnel junction. We found that the electromagnetic impedance of the SIN junction yields both the frequency-dependent damping and dynamic reactance which leads to an increase in the effective capacitance of the circuit. We calculated the dc I-V curves and transient characteristics of these circuits and explained their quantitative differences to the curves obtained within the resistively shunted junction model. The correct operation of the basic single-flux-quanta circuits with such SIN-shunted junctions, i.e. the Josephson transmission line and the toggle flip-flop, have also been modelled.

cond-mat.supr-con↗