arXiv subjects

E. Mariani

Publications and source records attributed to E. Mariani.

12 recordsLinked to original sources

arXiv2024

Designer gapped and tilted Dirac cones in lateral graphene superlattices

We show that a planar array of bipolar waveguides in graphene can be used to engineer gapped and tilted two-dimensional Dirac cones within the electronic band structure. The presence of these gapped and tilted Dirac cones is demonstrated through a superlattice tight-binding model and verified using a transfer matrix calculation. By varying the applied gate voltages, the tilt parameter of these Dirac cones can be controlled and their gaps can be tuned to fall in the terahertz range. The possibility of gate-tunable gapped Dirac cones gives rise to terahertz applications via interband transitions and designer Landau level spectra both of which can be controlled via Dirac cone engineering. We anticipate that our paper will encourage Dirac cone tilt and gap engineering for gate-tunable device applications in lateral graphene superlattices.

cond-mat.mes-hall↗

arXiv2024

Valley separation of photoexcited carriers in bilayer graphene

We derive the angular generation density of photoexcited carriers in gapless and gapped Bernal bilayer graphene. Exploiting the strong anisotropy of the band structure of bilayer graphene at low energies due to trigonal warping, we show that charge carriers belonging to different valleys propagate to different sides of the light spot upon photoexcitation. Importantly, in this low-energy regime, inter-valley electron-phonon scattering is suppressed, thereby protecting the valley index. This optically induced valley polarization can be further enhanced via momentum alignment associated with linearly-polarized light. We then consider gapped bilayer graphene (for example with the gap induced by external top- and back-gates) and show that it exhibits valley-dependent optical selection rules with circularly-polarized light analogous to other gapped Dirac materials, such as transition metal dichalcogenides. Consequently, gapped bilayer graphene can be exploited to optically detect valley polarization. Thus, we predict an optical valley Hall effect - the emission of two different circular polarizations from different sides of the light spot, upon linearly-polarized excitation. We also propose two realistic experimental setups in gapless and gapped bilayer graphene as a basis for novel optovalleytronic devices operating in the elusive terahertz regime.

cond-mat.mes-hall↗

arXiv2023

Optical valley separation in two-dimensional semimetals with tilted Dirac cones

Two-dimensional semimetals with tilted Dirac cones in the electronic band structure are shown to exhibit spatial separation of carriers belonging to different valleys under illumination. In stark contrast to gapped Dirac materials this optovalleytronic phenomenon occurs in systems with intact inversion and time-reversal symmetry that host massless Dirac cones in the band structure, thereby retaining the exceptional graphene-like transport properties. As a result we demonstrate that optical valley separation is possible at arbitrarily low photon frequencies including the deep infrared and terahertz regimes with full gate tunability via Pauli blocking. As a specific example of our theory, we demonstrate tunable valley separation in the proposed two-dimensional tilted Dirac cone semimetal 8-$Pmmn$ borophene for incident infrared photons at room temperature.

cond-mat.mes-hall↗

arXiv2022

Optical absorption in two-dimensional materials with tilted Dirac cones

The interband optical absorption of linearly polarised light by two-dimensional (2D) semimetals hosting tilted and anisotropic Dirac cones in the bandstructure is analysed theoretically. Super-critically tilted (type-II) Dirac cones are characterised by an absorption that is highly dependent on the incident photon polarisation and frequency, and is tunable by changing the Fermi level with a back-gate voltage. Type-II Dirac cones exhibit open Fermi surfaces and large regions of the Brillouin zone where the valence and conduction bands sit either above or below the Fermi level. As a consequence, unlike their sub-critically tilted (type-I) counterparts, type-II Dirac cones have many states that are Pauli blocked even when the Fermi level is tuned to the level crossing point. We analyse the interplay of the tilt parameter with the Fermi velocity anisotropy, demonstrating that the optical response of a Dirac cone cannot be described by its tilt alone. As a special case of our general theory we discuss the proposed 2D type-I semimetal 8-$Pmmn$ Borophene. Guided by our in-depth analytics we develop an optical recipe to fully characterise the tilt and Fermi velocity anisotropy of any 2D tilted Dirac cone solely from its absorption spectrum. We expect our work to encourage Dirac cone engineering as a major route to create gate-tunable thin-film polarisers.

cond-mat.mes-hall↗

arXiv2020

Josephson junctions as nanoelectromechanical Bloch oscillators

Bloch oscillations were predicted and observed long ago in Josephson junctions, which are thin insulating or conducting layers bridging two superconductors. Here we forward a scheme for utilizing these oscillations to amplify nano-metric mechanical vibrations. Highly coherent non-classical mechanical states can be produced and controlled by simply applying a DC bias current and an in-plane magnetic field. The vibrations induce peaks in the I-V characteristic of the junction and can be detected by simple DC voltage measurements.

cond-mat.mes-hall↗

arXiv2013

Interaction and temperature effects on the pair correlation function of a strongly interacting 1D quantum dot

The pair correlation function of a strongly interacting one-dimensional quantum dot is evaluated analytically within the framework of the spin coherent Luttinger liquid model. The influence of electron interactions and temperature on the competition between finite-size effects and electronic correlations is analyzed, also in the regime of large numbers of particles. The development of Wigner molecule correlations is observed as interactions get stronger. The visibility of such signatures is enhanced for temperatures comparable with the spin excitation energy of the system due to a suppression of the uncorrelated Friedel contribution to the pair correlation function.

cond-mat.mes-hall↗

arXiv2009

Synthetic electric fields and phonon damping in carbon nanotubes and graphene

Smoothly varying lattice strain in graphene affects the Dirac carriers through a synthetic gauge field. When the lattice strain is time dependent, as in connection with phononic excitations, the gauge field becomes time dependent and the synthetic vector potential is also associated with an electric field. We show that this synthetic electric field has observable consequences. Joule heating associated with the currents driven by the synthetic electric field dominates the intrinsic damping, caused by the electron-phonon interaction, of many acoustic phonon modes of graphene and metallic carbon nanotubes when including the effects of disorder and Coulomb interactions. Several important consequences follow from the observation that by time-reversal symmetry, the synthetic electric field associated with the vector potential has opposite signs for the two valleys. First, this implies that the synthetic electric field drives charge-neutral valley currents and is therefore unaffected by screening. This frequently makes the effects of the synthetic vector potential more relevant than a competing effect of the scalar deformation potential which has a much larger bare coupling constant. Second, valley currents decay by electron-electron scattering (valley Coulomb drag) which causes interesting temperature dependence of the damping rates. While our theory pertains first and foremost to metallic systems such as doped graphene and metallic carbon nanotubes, the underlying mechanisms should also be relevant for semiconducting carbon nanotubes when they are doped.

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arXiv2005

Signatures of spin in the n=1/3 Fractional Quantum Hall Effect

The activation gap Delta of the fractional quantum Hall state at constant filling n =1/3 is measured in wide range of perpendicular magnetic field B. Despite the full spin polarization of the incompressible ground state, we observe a sharp crossover between a low-field linear dependence of Delta on B associated to spin texture excitations and a Coulomb-like behavior at large B. From the global gap-reduction we get information about the mobility edges in the fractional quantum Hall regime.

cond-mat.mes-hall↗

arXiv2003

Direct Measurement of the g-Factor of Composite Fermions

The activation gap $Δ$ of the fractional quantum Hall states at constant fillings $ν=2/3$ and 2/5 has been measured as a function of the perpendicular magnetic field $B$. A linear dependence of $Δ$ on $B$ is observed while approaching the spin polarization transition. This feature allows a direct measurement of the $g$-factor of composite fermions which appears to be heavily renormalized by interactions and strongly sensitive to the electronic filling factor.

cond-mat.mes-hall↗

arXiv2002

Composite Fermions with Spin at $ν=1/2$

The model of Composite Fermions for describing interacting electrons in two dimensions in the presence of a magnetic field is described. In this model, charged Fermions are combined with an even number of magnetic flux quanta in such a way that the external magnetic field is compensated on the average for half filling of Landau levels and the interaction is incorporated into an effective mass of the new composite particles. The fluctuations of the Chern-Simons gauge field, which describes formally the flux attachment, induce new interactions between the Composite Fermions. The effective interaction is investigated with particular emphasis on the role of the electron spin at filling factor $ν=1/2$. For a system with equal numbers of spin-up and spin-down electrons it is found that the dominant effective interaction is attractive in the spin-singlet channel. This can induce a ground state consisting of Cooper pairs of Composite Fermions that is separated from the excited states by a gap. The results are used to understand recent spin polarization measurements done in the region of the Fractional Quantum Hall Effect at different constant filling factors.

cond-mat.mes-hall↗

arXiv2002

Spin-pairing instabilities at the coincidence of two Landau levels

The effect of interactions near the coincidence of two Landau levels with opposite spins at filling factor 1/2 is investigated. By mapping to Composite Fermions it is shown that the fluctuations of the gauge field induces an effective attractive Fermion interaction. This can lead to a spin-singlet ground state that is separated from the excited states by a gap. The magnitude of the gap is evaluated. The results are consistent with the recently observed half-polarized states in the FQHE at a fixed filling factor. It is suggested that similar anomalies exist for other spin configurations in degenerate spin-up and spin-down Landau levels. An experiment for testing the spin-singlet state is proposed.

cond-mat.mes-hall↗

arXiv2001

New selection rules for resonant Raman scattering on quantum wires

The bosonisation technique is used to calculate the resonant Raman spectrum of a quantum wire with two electronic sub-bands occupied. Close to resonance, the cross section at frequencies in the region of the inter sub-band transitions shows distinct peaks in parallel polarisation of the incident and scattered light that are signature of collective higher order spin density excitations. This is in striking contrast to the conventional selection rule for non-resonant Raman scattering according to which spin modes can appear only in perpendicular polarisation. We predict a new selection rule for the excitations observed near resonance, namely that, apart from charge density excitations, only spin modes with positive group velocities can appear as peaks in the spectra in parallel configuration close to resonance. The results are consistent with all of the presently available experimental data.

cond-mat.str-el↗