arXiv subjects

E. Peled

Publications and source records attributed to E. Peled.

7 recordsLinked to original sources

arXiv2006

Power law resistivity behavior in 2D superconductors across the magnetic-field tuned superconductor-insulator transition

We present the results of a systematic study of thin-films of amorphous indium-oxide near the superconductor-insulator transition. We show that the film's resistivity follows a simple, well-defined, power-law dependence on the perpendicular magnetic field. This dependence holds well into the insulating state. Our results indicate that vortices play a central role in the transport of our films in the superconducting as well as insulating phases.

cond-mat.supr-con↗

arXiv2006

Angular dependence of the magnetic-field driven superconductor-insulator transition in thin films of amorphous indium-oxide

A significant anisotropy of the magnetic-field driven superconductor-insulator transition is observed in thin films of amorphous indium-oxide. The anisotropy is largest for more disordered films which have a lower transition field. At higher magnetic field the anisotropy reduces and even changes sign beyond a sample specific and temperature independent magnetic field value. The data are consistent with the existence of more that one mechanism affecting transport at high magnetic fields.

cond-mat.supr-con↗

arXiv2006

Two-Dimensional Electron Gas in InGaAs/InAlAs Quantum Wells

We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP substrates. The nearly constant mobility for samples with the setback distance larger than 50nm and the similarity between the quantum and transport life-time suggest that the main scattering mechanism is due to short range scattering, such as alloy scattering, with a scattering rate of 2.2 ps$^{-1}$. We also obtain the Fermi level at the In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As surface to be 0.36eV above the conduction band, when fitting our experimental densities with a Poisson-Schrödinger model.

cond-mat.mes-hall↗

arXiv2005

Experimental evidence for a collective insulating state in two-dimensional superconductors

We present the results of an experimental study of the current-voltage characteristics in strong magnetic field ($B$) of disordered, superconducting, thin-films of amorphous Indium-Oxide. As the $B$ strength is increased superconductivity degrades, until a critical field ($B_c$) where the system is forced into an insulating state. We show that the differential conductance measured in the insulating phase vanishes abruptly below a well-defined temperature, resulting in a clear threshold for conduction. Our results indicate that a new collective state emerges in two-dimensional superconductors at high $B$.

cond-mat.supr-con↗

arXiv2004

Symmetries of the Resistance of Mesoscopic Samples in the Quantum Hall Regime

The symmetry properties of the resistance of mesoscopic samples in the quantum Hall regime are investigated. In addition to the reciprocity relation, our samples obey new symmetries, that relate resistances measured with different contact configurations. Different kinds of symmetries are identified, depending on whether the magnetic field value is such that the system is above, or below, a quantum Hall transition. Related symmetries have recently been reported for macroscopic samples in the quantum Hall regime by Ponomarenko {\it et al.} (Solid State Commun. {\bf 130}, 705 (2004)), and Karmakar {\it et al.} (Preprint cond-mat/0309694).

cond-mat.mes-hall↗

arXiv2003

Near-Perfect Correlation of the Resistance Components of Mesoscopic Samples at the Quantum Hall Regime

We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the $ν=2$ and the $ν=1$ quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall components of the resistance. These correlated fluctuations appear in a magnetic-field range for which the two-terminal resistance of the samples is quantized. We discuss these findings in light of edge-state transport models of the quantum Hall effect. We also show that our results lead to an ambiguity in the determination of the width of quantum Hall transitions.

cond-mat.mes-hall↗

arXiv2002

The quantized Hall effect in the presence of resistance fluctuations

We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its $ν=1$ value, $h/e^{2}$. This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity in the quantum Hall effect to the mesoscopic regime.

cond-mat.mes-hall↗