arXiv subjects

E. Piatti

Publications and source records attributed to E. Piatti.

6 recordsLinked to original sources

arXiv2020

Superconductivity of underdoped PrFeAs(O,F) investigated via point-contact spectroscopy and nuclear magnetic resonance

Underdoped PrFeAs(O,F), one of the less known members of the 1111 family of iron-based superconductors, was investigated in detail by means of transport, SQUID magnetometry, nuclear magnetic resonance (NMR) measurements and point-contact Andreev-reflection spectroscopy (PCARS). PCARS measurements on single crystals evidence the multigap nature of PrFeAs(O,F) superconductivity, shown to host at least two isotropic gaps, clearly discernible in the spectra, irrespective of the direction of current injection (i.e., along the ab planes or along the c axis). Additional features at higher energy can be interpreted as signatures of a strong electron-boson coupling, as demonstrated by a model which combines Andreev reflection with the Eliashberg theory. Magnetic resonance measurements in the normal phase indicate the lack of a magnetic order in underdoped PrFeAs(O,F), while $^{75}$As NMR spin-lattice relaxation results suggest the presence of significant electronic spin fluctuations, peaking above $T_{c}$ and expected to mediate the superconducting pairing.

cond-mat.supr-con↗

arXiv2017

Proximity Eliashberg theory of electrostatic field-effect-doping in superconducting films

We calculate the effect of a static electric field on the critical temperature of a s-wave one band superconductor in the framework of proximity effect Eliashberg theory. In the weak electrostatic field limit the theory has no free parameters while, in general, the only free parameter is the thickness of the surface layer where the electric field acts. We conclude that the best situation for increasing the critical temperature is to have a very thin film of a superconducting material with a strong increase of electron-phonon (boson) constant upon charging.

cond-mat.supr-con↗

arXiv2017

Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene

We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer samples under a large induced surface charge density both above and below the glass transition temperature of the polymer. We find that the carrier mobility shows a strong asymmetry between the hole and electron doping regime. We then employ ab-initio density functional theory (DFT) calculations to determine the average scattering lifetime from the experimental data. We explain its peculiar dependence on the carrier density in terms of the specific properties of the electrolyte we used in our experiments.

cond-mat.mes-hall↗

arXiv2016

Control of bulk superconductivity in a BCS superconductor by surface charge doping via electrochemical gating

The electrochemical gating technique is a powerful tool to tune the \textit{surface} electronic conduction properties of various materials by means of pure charge doping, but its efficiency is thought to be hampered in materials with a good electronic screening. We show that, if applied to a metallic superconductor (NbN thin films), this approach allows observing reversible enhancements or suppressions of the \emph{bulk} superconducting transition temperature, which vary with the thickness of the films. These results are interpreted in terms of proximity effect, and indicate that the effective screening length depends on the induced charge density, becoming much larger than that predicted by standard screening theory at very high electric fields.

cond-mat.supr-con↗

arXiv2016

Weak Localization in Electric-Double-Layer Gated Few-layer Graphene

We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resistance that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab-initio calculations we derive the dependence of transport, intervalley and phase coherence scattering lifetimes on total carrier density. We find that electron-electron scattering in the Nyquist regime is the main source of dephasing at temperatures lower than 30K in the $\sim10^{13}$cm$^{-2}$ to $\sim7 \cdot 10^{14}$cm$^{-2}$ range of carrier densities. With the increase of gate voltage, transport elastic scattering is dominated by the competing effects due to the increase in both carrier density and charged scattering centers at the surface. We also tune our devices into a crossover regime between weak and strong localization, indicating that simultaneous tunability of both carrier and defect density at the surface of electric double layer gated materials is possible.

cond-mat.mes-hall↗

arXiv2015

Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme conditions. Here we present the results obtained in 3-, 4- and 5-layer graphene devices down to 3.5 K, where a large surface charge density up to about 6.8x10^14 cm^(-2) has been reached by employing a novel polymer electrolyte solution for the electrochemical gating. In contrast with recent results obtained in single-layer graphene, the temperature dependence of the sheet resistance between 20 K and 280 K shows a low-temperature dominance of a T^2 component - that can be associated with electron-electron scattering - and, at about 100 K, a crossover to the classic electron-phonon regime. Unexpectedly this crossover does not show any dependence on the induced charge density, i.e. on the large tuning of the Fermi energy.

cond-mat.mes-hall↗