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E. Placidi

Publications and source records attributed to E. Placidi.

7 recordsLinked to original sources

Development of ion-beam sputtered silicon nitride thin films for low-noise mirror coatings of gravitational-wave detectors

Brownian thermal noise of thin-film coatings is a fundamental limit for high-precision experiments based on optical resonators such as gravitational-wave interferometers. Here we present the results of a research activity aiming to develop lower-noise ion-beam sputtered silicon nitride thin films compliant with the very stringent requirements on optical loss of gravitational-wave interferometers. In order to test the hypothesis of a correlation between the synthesis conditions of the films and their elemental composition and optical and mechanical properties, we varied the voltage, current intensity and composition of the sputtering ion beam, and we performed a broad campaign of characterizations. While the refractive index was found to monotonically depend on the beam voltage and linearly vary with the N/Si ratio, the optical absorption appeared to be strongly sensitive to other factors, as yet unidentified. However, by systematically varying the deposition parameters, an optimal working point was found. Thus we show that the loss angle and extinction coefficient of our thin films can be as low as $(1.0 \pm 0.1) \times 10^{-4}$ rad at $\sim$2.8 kHz and $(6.4 \pm 0.2) \times 10^{-6}$ at 1064 nm, respectively, after thermal treatment at 900 $^{\circ}$C. To the best of our knowledge, such loss angle value is the lowest ever measured on this class of thin films. We then used our silicon nitride thin films to design and produce a multi-material mirror coating showing a thermal noise amplitude of $(10.3 \pm 0.2) \times 10^{-18}$ m Hz$^{-1/2}$ at 100 Hz, which is 25\% lower than in current mirror coatings of the Advanced LIGO and Advanced Virgo interferometers, and an optical absorption as low as $(1.6 \pm 0.5)$ parts per million at 1064 nm.

physics.ins-det

Measurement and simulation of mechanical and optical properties of sputtered amorphous SiC coatings

In this work We report on the extensive characterization of amorphous silicon carbide (a-SiC) coatings prepared by physical deposition methods. We compare the results obtained on two different sputtering systems (a standard RF magnetron sputtering and a ion-beam assisted sputtering) to seize the impact of two different setups on the repeatably of the results. After a thorough characterization of structural, morphological, and compositional characteristics of the prepared samples, we focus on a detailed study of the optical and mechanical losses in those materials. Mechanical losses are further investigated from a microscopic point of view by comparing our experimental results with molecular dynamic simulations of the amorphous SiC structure: first we define a protocol to generate a numerical model of the amorphous film, capturing the main features of the real system; then we simulate its dynamical behaviour upon deformation in order to obtain its mechanical response. Our results are discussed within the perspective application of a-SiC as an optical material for high-precision optical experiments and in particular in gravitational wave interferometry.

physics.ins-det

Manipulation of electrical and ferromagnetic properties of photo-sensitized (Ga,Mn)As

We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Curie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the GaMnAs/fluorescein system with respect to (Ga,Mn)As. Upon exposure to visible light a shift in Curie temperature towards higher values and a reduction of the coercive field can be achieved in photo-sensitized (Ga,Mn)As. A mayor change in the XPS spectrum of (Ga,Mn)As indicates the appearance of occupied levels in the energy range corresponding to the (Ga,Mn)As valence band states upon adsorption of fluorescein. This points towards a hole quenching effect at the molecule-(Ga,Mn)As interface which is susceptible to light exposure.

cond-mat.mtrl-sci

Temperature dependent Neel wall dynamics in GaMnAs/GaAs

Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depend on the Hall-geometry with respect to the crystal axes. Above a critical temperature where a biaxial-to-uniaxial anisotropy transition occurs a drastic increase of nucleation events is observed. Below this temperature, the nucleation of domains tends to be rather insensitive to temperature. This first spatially resolved study of domain wall dynamics in patterned GaMnAs at variable temperatures has important implications for potential single domain magneto-logic devices made from ferromagnetic semiconductors.

cond-mat.mtrl-sci

Complex domain wall dynamics in compressively strained GaMnAs epilayers

The domain wall induced reversal dynamics in compressively strained GaMnAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of an uniaxial part in the in-plane magnetic anisotropy (90+/-Delta) domain walls with considerably different dynamic behavior are observed. While the (90+Delta) reversal is identified to be propagation dominated with a small number of domain walls, the case of (90-Delta) reversal includes the nucleation of many domain walls. The domain wall nucleation/propagation energy for both transitions are estimated using model calculations from which we conclude that single domain devices can be achievable using the (90+Delta) mode.

cond-mat.other

Experimental corroboration of the Mulheran-Blackman explanation of the scale invariance in thin film growth: the case of InAs quantum dots on GaAs(001)

Mulheran and Blackman have provided a simple and clear explanation of the scale invariance of the island size distribution at the early stage of film growth [Phil. Mag. Lett. 72, 55 (1995)]. Their theory is centered on the concept of capture zone properly identified by Voronoi cell. Here we substantiate experimentally their theory by studying the scale invariance of InAs quantum dots (QDs) forming on GaAs(001) substrate. In particular, we show that the volume distributions of QDs well overlap the corrisponding experimental distributions of the Voronoi-cell areas. The interplay between the experimental data and the numerical simulations allowed us to determine the spatial correlation length among QDs.

cond-mat.mtrl-sci

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001)

The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensional quantum dots evidences two transition thresholds at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large. Based on the scaling analysis, such families are characterized by different mechanisms of aggregation, involving the change of the critical nucleus size. Remarkably, the small ones give rise to a wealth of "monomers" through the erosion of the step edges, favoring the explosive nucleation of the large ones.

cond-mat.mtrl-sci