arXiv subjects

E. Prati

Publications and source records attributed to E. Prati.

6 recordsLinked to original sources

arXiv2026

Quantum circuit partition as a maze: emerging percolation transition via path finding

In quantum circuit optimization, circuit partitioning enables the optimization process to be parallelized across multiple devices. Each device is responsible for either reducing the number of selected gates or simplifying the local circuit structure. Most existing approaches to circuit partitioning are quantum-distribution-oriented and rely on splitting CNOT gates by introducing mid-circuit measurements and qubit resets. Currently, there is no criterion to determine how a circuit can be optimally partitioned without removing the CNOT gates for circuit optimization purposes. To address this challenge, we formalize the partition problem as a cutting path through a maze, where the CNOT gates represent the walls. We show that the existence of such a path separates quantum circuits into two classes through a percolation phase transition. In particular, it distinguishes a partitionable regime from a nonpartitionable one, arising from qubit permutations. Such permutations are generated by simulated annealing. We analyze its effect on the CNOT cluster from the perspective of network science and distribution analysis. Our results show that partitioning into two CNOT clusters is possible when the number of CNOTs is almost equal to the number of qubits. Based on this observation, we provide a scalable and practical criterion for identifying whether such a partition exists. Overall, our framework provides theoretical and numerical insight into circuit partitioning within quantum circuit optimization, forming the basis for algorithmic development.

quant-ph↗

arXiv2015

Valley blockade and multielectron spin-valley Kondo effect in silicon

We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation N=1, 2, 3. The spin-valley Kondo effect emerges under different kinds of screening depending on the electron filling. By exploiting the valley blockade regime, valley index conservation in the Kondo SU(4) is deduced without the employment of an external magnetic field. Microwave irradiation suppresses the Kondo effect at occupancies up to three electrons.

cond-mat.mes-hall↗

arXiv2015

Coherent Tunneling by Adiabatic Passage of an exchange-only spin qubit in a double quantum dot chain

A scheme based on Coherent Tunneling by Adiabatic Passage (CTAP) of exchange-only spin qubit quantum states in a linearly arranged double quantum dot chain is demonstrated. Logical states for the qubit are defined by adopting the spin state of three electrons confined in a double quantum dot. The possibility to obtain gate operations entirely with electrical manipulations makes this qubit a valuable architecture in the field of quantum computing for the implementation of quantum algorithms. The effect of the external control parameters as well as the effect of the dephasing on the coherent tunneling in the chain is studied. During adiabatic transport, within a constant energy degenerate eigenspace, the states in the double quantum dots internal to the chain are not populated, while transient populations of the mixed states in the external ones are predicted.

quant-ph↗

arXiv2015

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations

Double-dot exchange-only qubit represents a promising compromise between high speed and simple fabrication in solid-state implementations. A couple of interacting double-dot exchange-only qubits, each composed by three electrons distributed in a double quantum dot, is exploited to realize controlled-NOT (CNOT) operations. The effective Hamiltonian model of the composite system is expressed by only exchange interactions between pairs of spins. Consequently, the evolution operator has a simple form and represents the starting point for the research of sequences of operations that realize CNOT gates. Two different geometrical configurations of the pair are considered, and a numerical mixed simplex and genetic algorithm is used. We compare the nonphysical case in which all the interactions are controllable from the external and the realistic condition in which intra-dot interactions are fixed by the geometry of the system. In the latter case, we find the CNOT sequences for both the geometrical configurations and we considered a qubit system where electrons are electrostatically confined in two quantum dots in a silicon nanowire. The effects of the geometrical sizes of the nanowire and of the gates on the fundamental parameters controlling the qubit are studied by exploiting a spin-density-functional theory-based simulator. Consequently, CNOT gate performances are evaluated.

quant-ph↗

arXiv2013

Effective Hamiltonian for the hybrid double quantum dot qubit

Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single qubit and two qubits quantum logic ports. We derive the Schrieffer-Wolff effective Hamiltonian that describes in a simple and intuitive way the qubit by combining a Hubbard-like model with a projector operator method. As a result, the Hubbard-like Hamiltonian is transformed in an equivalent expression in terms of the exchange coupling interactions between pairs of electrons. The effective Hamiltonian is exploited to derive the dynamical behaviour of the system and its eigenstates on the Bloch sphere to generate qubits operation for quantum logic ports. A realistic implementation in silicon and the coupling of the qubit with a detector are discussed.

quant-ph↗

arXiv2012

Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon

We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magnetic field independent tunneling time is measured. We measure the statistics of the transfer of electrons observed when the ground state D0 of the donor is aligned with the SET states.

cond-mat.mes-hall↗