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E. R. Mucciolo

Publications and source records attributed to E. R. Mucciolo.

At least 19 recordsLinked to original sources

Observation of Wigner cusps in a metallic carbon nanotube

Previous gate-dependent conductance measurements of metallic carbon nanotubes have revealed unexplainable conductance suppressions, occurring at two different gate voltages. These were previously attributed to the gate-dependency of contact resistance. Our gate-dependent conductivity measurements on a metallic nanotube with known chirality show that these bimodal conductance suppressions are the manifestations of Wigner cusps, often seen in atomic and nuclear physics experiments.

cond-mat.mes-hall↗

Resistivity size effect due to surface steps on ruthenium thin films computed with a realistic tight-binding model

A realistic tight-binding model is developed and employed to elucidate the resistivity size effect due to steps on Ru thin films. The resistivity of two different film orientations, $(0001)$ and $(1 \bar{1}00)$, is computed for transport along a $[1 1 \bar{2} 0]$ direction both for smooth surfaces and for surfaces with monolayer-high steps. In the case of smooth films, the systems are also studied using solutions to the Boltzmann transport equation (BTE). Interestingly, the resistivity of $(1 \bar{1}00)$ surfaces exhibits a significant size effect even in the absence of surface steps. When monolayer-high steps are spaced $\sim 10$ nm apart, the resistivity is shown to increase due to scattering from the steps. However, only a small increase was found which cannot explain the large effect seen in recent experiments with Ru thin films. This highlights the need for further elucidation of the resistivity size effect. Theoretical analysis suggest that films made from materials with a relatively large ballistic conductance per area like Ru should exhibit a reduced resistivity size effect. This result points to Ru as a promising interconnect material. Finally, because a very efficient algorithm for computing resistivity based on the kernel polynomial method (KPM) is used, the approach fulfills a need for realistic models that can span length scales directly relevant to experimental results. The calculations described here include films approaching $5$ nm in thickness, with in-plane distances up to $\sim 160$ nm and $3.8\times10^{5}$ atomic sites.

cond-mat.mes-hall↗

Quantum Vertex Model for Reversible Classical Computing

Mappings of classical computation onto statistical mechanics models have led to remarkable successes in addressing some complex computational problems. However, such mappings display thermodynamic phase transitions that may prevent reaching solution even for easy problems known to be solvable in polynomial time. Here we map universal reversible classical computations onto a planar vertex model that exhibits no bulk classical thermodynamic phase transition, independent of the computational circuit. Within our approach the solution of the computation is encoded in the ground state of the vertex model and its complexity is reflected in the dynamics of the relaxation of the system to its ground state. We use thermal annealing with and without 'learning' to explore typical computational problems. We also construct a mapping of the vertex model into the Chimera architecture of the D-Wave machine, initiating an approach to reversible classical computation based on state-of-the-art implementations of quantum annealing.

cond-mat.stat-mech↗

Long-time efficacy of the surface code in the presence of a superohmic environment

We study the long-time evolution of a quantum memory coupled to a bosonic environment on which quantum error correction (QEC) is performed using the surface code. The memory's evolution encompasses $N$ QEC cycles, each of them yielding a non-error syndrome. This assumption makes our analysis independent of the recovery process. We map the expression for the time evolution of the memory onto the partition function of an equivalent statistical mechanical spin system. In the superohmic dissipation case the long-time evolution of the memory has the same behavior as the time evolution for just one QEC cycle. For this case we find analytical expressions for the critical parameters of the order-disorder phase transition of an equivalent spin system. These critical parameters determine the threshold value for the system-environment coupling below which it is possible to preserve the memory's state.

quant-ph↗

Scattering strength of potassium on a carbon nanotube with known chirality

We have measured the scattering strength of charged impurities on a semiconducting single-walled carbon nanotube with known chirality. The resistivity of the nanotube is measured as a function of the density of adsorbed potassium atoms, enabling the determination of the resistance added by an individual potassium atom. Holes are scattered 37 times more efficiently than electrons by an adsorbed potassium atom. The determined scattering strength is used to reveal the spatial extent and depth of the scattering potential for potassium, a model Coulomb adsorbate. Our result represents an essential experimental input to understand adsorbate-induced scattering and provides a crucial step for paving the way to rational design of nanotube-based sensors.

cond-mat.mes-hall↗

A tight-binding model for MoS$_2$ monolayers

We propose an accurate tight-binding parametrization for the band structure of MoS$_2$ monolayers near the main energy gap. We introduce a generic and straightforward derivation for the band energies equations that could be employed for other monolayer dichalcogenides. A parametrization that includes spin-orbit coupling is also provided. The proposed set of model parameters reproduce both the correct orbital compositions and location of valence and conductance band in comparison with ab initio calculations. The model gives a suitable starting point for realistic large-scale atomistic electronic transport calculations.

cond-mat.mes-hall↗

Dynamical spin injection at a quasi-one-dimensional ferromagnet-graphene interface

We present a study of dynamical spin injection from a three-dimensional ferromagnet into two-dimensional single-layer graphene. Comparative ferromagnetic resonance (FMR) studies of ferromagnet/graphene strips buried underneath the central line of a coplanar waveguide show that the FMR linewidth broadening is the largest when the graphene layer protrudes laterally away from the ferromagnetic strip, indicating that the spin current is injected into the graphene areas away from the area directly underneath the ferromagnet being excited. Our results confirm that the observed damping is indeed a signature of dynamical spin injection, wherein a pure spin current is pumped into the single-layer graphene from the precessing magnetization of the ferromagnet. The observed spin pumping efficiency is difficult to reconcile with the expected backflow of spins according to the standard spin pumping theory and the characteristics of graphene, and constitutes an enigma for spin pumping in two-dimensional structures.

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Magnetic field modulated Kondo effect in a single-magnetic-ion molecule

We study numerically the low-temperature electronic transport properties of a single-ion magnet with uniaxial and transverse spin anisotropies. We find clear signatures of a Kondo effect caused by the presence of a transverse (zero-field) anisotropy in the molecule. Upon applying a transverse magnetic field to the single-ion magnet, we observe oscillations of the Kondo effect due to the presence of diabolical (degeneracy) points of the energy spectrum of the molecule caused by a geometrical phase interference effects similar to those observed in the quantum tunneling of multi-ion molecular nanomagnets. The field-induced lifting of the ground state degeneracy competes with the interference modulation, resulting in some cases in a suppression of the Kondo peak.

cond-mat.mes-hall↗

Fidelity of the surface code in the presence of a bosonic bath

We study the resilience of the surface code to decoherence caused by the presence of a bosonic bath. This approach allows us to go beyond the standard stochastic error model commonly used to quantify decoherence and error threshold probabilities in this system. The full quantum mechanical system-bath dynamics is computed exactly over one quantum error correction cycle. Since all physical qubits interact with the bath, space-time correlations between errors are taken into account. We compute the fidelity of the surface code as a function of the quantum error correction time. The calculation allows us to map the problem onto an Ising-like statistical spin model with two-body interactions and a fictitious temperature which is related to the inverse bath coupling constant. The model departs from the usual Ising model in the sense that interactions can be long ranged and can involve complex exchange couplings; in addition, the number of allowed configurations is restricted by the syndrome extraction. Using analytical estimates and numerical calculations, we argue that, in the limit of an infinite number of physical qubits, the spin model sustain a phase transition which can be associated to the existence of an error threshold in the surface code. An estimate of the transition point is given for the case of nearest-neighbor interactions.

quant-ph↗

Dynamic Spin Injection into Chemical Vapor Deposited Graphene

We demonstrate dynamic spin injection into chemical vapor deposition (CVD) grown graphene by spin pumping from permalloy (Py) layers. Ferromagnetic resonance measurements at room temperature reveal a strong enhancement of the Gilbert damping at the Py/graphene interface, exceeding that observed in even Py/platinum interfaces. Similar results are also shown on Co/graphene layers. This enhancement in the Gilbert damping is understood as the consequence of spin pumping at the interface driven by magnetization dynamics. Our observations suggest a strong enhancement of spin-orbit coupling in CVD graphene, in agreement with earlier spin valve measurements.

cond-mat.mes-hall↗

RKKY Interactions in Graphene: Dependence on Disorder and Gate Voltage

We report the dependence of Ruderman-Kittel-Kasuya-Yoshida\,(RKKY) interaction on nonmagmetic disorder and gate voltage in grapheme. First the semiclassical method is employed to reserve the expression for RKKY interaction in clean graphene. Due to the pseudogap at Dirac point, the RKKY coupling in undoped grapheme is found to be proportional to $1/R^3$. Next, we investigate how the RKKY interaction depends on nonmagnetic disorder strength and gate voltage by studying numerically the Anderson tight-binding model on a honeycomb lattice. We observe that the RKKY interaction along the armchair direction is more robust to nonmagnetic disorder than in other directions. This effect can be explained semiclassically: The presence of multiple shortest paths between two lattice sites in the armchair directions is found to be responsible for the reduceddisorder sensitivity. We also present the distribution of the RKKY interaction for the zigzag and armchair directions. We identify three different shapes of the distributions which are repeated periodically along the zigzag direction, while only one kind, and more narrow distribution, is observed along the armchair direction. Moreover, we find that the distribution of amplitudes of the RKKY interaction crosses over from a non-Gaussian shape with very long tails to a completely log-normal distribution when increasing the nonmagnetic disorder strength. The width of the log-normal distribution is found to linearly increase with the strength of disorder, in agreement with analytical predictions. At finite gate voltage near the Dirac point, Friedel oscillation appears in addition to the oscillation from the interference between two Dirac points. This results in a beating pattern. We study how these beating patterns are effected by the nonmagnetic disorder in doped graphene.

cond-mat.mes-hall↗

Kondo-Anderson Transitions

Dilute magnetic impurities in a disordered Fermi liquid are considered close to the Anderson metal-insulator transition (AMIT). Critical Power law correlations between electron wave functions at different energies in the vicinity of the AMIT result in the formation of pseudogaps of the local density of states. Magnetic impurities can remain unscreened at such sites. We determine the density of the resulting free magnetic moments in the zero temperature limit. While it is finite on the insulating side of the AMIT, it vanishes at the AMIT, and decays with a power law as function of the distance to the AMIT. Since the fluctuating spins of these free magnetic moments break the time reversal symmetry of the conduction electrons, we find a shift of the AMIT, and the appearance of a semimetal phase. The distribution function of the Kondo temperature $T_{K}$ is derived at the AMIT, in the metallic phase and in the insulator phase. This allows us to find the quantum phase diagram in an external magnetic field $B$ and at finite temperature $T$. We calculate the resulting magnetic susceptibility, the specific heat, and the spin relaxation rate as function of temperature. We find a phase diagram with finite temperature transitions between insulator, critical semimetal, and metal phases. These new types of phase transitions are caused by the interplay between Kondo screening and Anderson localization, with the latter being shifted by the appearance of the temperature-dependent spin-flip scattering rate. Accordingly, we name them Kondo-Anderson transitions (KATs).

cond-mat.str-el↗

RKKY Interaction in Disordered Graphene

We investigate the effects of nonmagnetic disorder on the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction in graphene by studying numerically the Anderson model with on-site and hopping disorder on a honeycomb lattice at half filling. We evaluate the strength of the interaction as a function of the distance R between two magnetic ions, as well as their lattice positions and orientations. In the clean limit, we find that the strength of the interaction decays as 1/R^3, with its sign and oscillation amplitude showing strong anisotropy. With increasing on-site disorder, the mean amplitude decreases exponentially at distances exceeding the elastic mean free path. At smaller distances, however, the oscillation amplitude increases strongly and its sign changes on the same sublattice for all directions but the armchair direction. For random hopping disorder, no sign change is observed. No significant changes to the geometrical average values of the RKKY interaction are found at small distances, while exponential suppression is observed at distances exceeding the localization length.

cond-mat.mes-hall↗

Correlated random hopping disorder in graphene at high magnetic fields: Landau level broadening and localization properties

We study the density of states and localization properties of the lowest Landau levels of graphene at high magnetic fields. We focus on the effects caused by correlated long-range hopping disorder, which, in exfoliated graphene, is induced by static ripples. We find that the broadening of the lowest Landau level shrinks exponentially with increasing disorder correlation length. At the same time, the broadening grows linearly with magnetic field and with disorder amplitudes. The lowest Landau level peak shows a robust splitting, whose origin we identify as the breaking of the sublattice (valley) degeneracy.

cond-mat.mes-hall↗

Critical Metal Phase at the Anderson Metal-Insulator Transition with Kondo Impurities

It is well-known that magnetic impurities can change the symmetry class of disordered metallic systems by breaking spin and time-reversal symmetry. At low temperature these symmetries can be restored by Kondo screening. It is also known that at the Anderson metal-insulator transition, wave functions develop multifractal fluctuations with power law correlations. Here, we consider the interplay of these two effects. We show that multifractal correlations open local pseudogaps at the Fermi energy at some random positions in space. When dilute magnetic impurities are at these locations, Kondo screening is strongly suppressed. We find that when the exchange coupling J is smaller than a certain value J*, the metal-insulator transition point extends to a critical region in the disorder strength parameter and to a band of critical states. The width of this critical region increases with a power of the concentration of magnetic impurities.

cond-mat.str-el↗

Adiabatic Charge Pumping through Quantum Dots in the Coulomb Blockade Regime

We investigate the influence of the Coulomb interaction on the adiabatic pumping current through quantum dots. Using nonequilibrium Green's functions techniques, we derive a general expression for the current based on the instantaneous Green's function of the dot. We apply this formula to study the dependence of the charge pumped per cycle on the time-dependent pumping potentials. The possibility of charge quantization in the presence of a finite Coulomb repulsion energy is investigated in the light of recent experiments.

cond-mat.mes-hall↗

Nonperturbative Scaling Theory of Free Magnetic Moment Phases in Disordered Metals

The crossover between a free magnetic moment phase and a Kondo phase in low dimensional disordered metals with dilute magnetic impurities is studied. We perform a finite size scaling analysis of the distribution of the Kondo temperature as obtained from a numerical renormalization group calculation of the local magnetic susceptibility and from the solution of the self-consistent Nagaoka-Suhl equation. We find a sizable fraction of free (unscreened) magnetic moments when the exchange coupling falls below a disorder-dependent critical value $J_{\rm c}$. Our numerical results show that between the free moment phase due to Anderson localization and the Kondo screened phase there is a phase where free moments occur due to the appearance of random local pseudogaps at the Fermi energy whose width and power scale with the elastic scattering rate $1/τ$.

cond-mat.str-el↗

Non-Markovian dynamics of double quantum dot charge qubits due to acoustic phonons

We investigate the dynamics of a double quantum dot charge qubit which is coupled to piezoelectric acoustic phonons, appropriate for GaAs heterostructures. At low temperatures, the phonon bath induces a non-Markovian dynamical behavior of the oscillations between the two charge states of the double quantum dot. Upon applying the numerically exact quasiadiabatic propagator path-integral scheme, the reduced density matrix of the charge qubit is calculated, thereby avoiding the Born-Markov approximation. This allows a systematic study of the dependence of the Q-factor on the lattice temperature, on the size of the quantum dots, as well as on the interdot coupling. We calculate the Q-factor for a recently realized experimental setup and find that it is two orders of magnitudes larger than the measured value, indicating that the decoherence due to phonons is a subordinate mechanism.

cond-mat.mes-hall↗