arXiv subjects

E. Sasioglu

Publications and source records attributed to E. Sasioglu.

At least 19 recordsLinked to original sources

arXiv2025

Systematic cRPA study of two-dimensional MA$_2$Z$_4$ materials: From unconventional screening to correlation-driven instabilities

Understanding the interplay between screening, electronic correlations, and collective excitations is essential for the design of two-dimensional quantum materials. Here, we present a comprehensive first-principles study of more than 60 MA$_2$Z$_4$ monolayers, encompassing semiconducting, metallic, cold-metallic, magnetic, and topological phases. Using the constrained random phase approximation (cRPA), we compute material-specific effective Coulomb interaction parameters $U$, $U'$, and $J$, including their spatial dependence across distinct correlated subspaces defined by local coordination and crystal symmetry. In semiconducting compounds, long-range nonlocal interactions persist, revealing unconventional screening and suggesting strong excitonic effects beyond simple dielectric models. In cold-metallic systems, sizable long-range Coulomb interactions remain despite the presence of free carriers, highlighting their atypical metallic screening. Among 33-valence-electron compounds, we find $U_{\mathrm{eff}} > W$ in the $\beta_2$ phase, indicating proximity to charge-density-wave or Mott instabilities. Several V- and Nb-based systems exhibit intermediate-to-strong correlation strength, with $U/W > 1 $ in multiple cases. Using cRPA-derived Stoner parameters, we identify magnetic instabilities in various V-, Nb-, Cr-, and Mn-based compounds. Finally, selected cold-metallic systems display plasmon dispersions that deviate from the conventional $\sqrt{q}$ behavior, revealing nearly non-dispersive low-energy modes. These results position MA$_2$Z$_4$ monolayers as a versatile platform for investigating correlation-driven instabilities and emergent collective behavior in two dimensions.

cond-mat.str-el↗

arXiv2025

Correlation effects in two-dimensional MX_2 and MA_2Z_4 (M= Nb, Ta; X= S, Se, Te; A=Si, Ge; Z=N, P) cold metals: Implications for device applications

Cold metals, characterized by their distinctive band structures, hold promise for innovative electronic devices such as tunnel diodes with negative differential resistance (NDR) effect and field-effect transistors (FETs) with sub-60 mV/dec subthreshold swing (SS). In this study, we employ the GW approximation and HSE06 hybrid functional to investigate the correlation effects on the electronic band structure of two-dimensional (2D) cold metallic materials, specifically focusing on MX_2 and MA_2Z_4 (M=Nb, Ta; X=S, Se, Te; A=Si, Ge; Z= N, P) compounds in 1H structure. These materials exhibit a unique band structure with an isolated metallic band around the Fermi energy, denoted as W_m, as well as two energy gaps: the internal gap E^I_g below the Fermi level and the external gap E^E_g above the Fermi level. These three electronic structure parameters play a decisive role in determining the current-voltage (I-V) characteristics of tunnel diodes, the nature of the NDR effect, and the transfer characteristics and SS value of FETs. Our calculations reveal that both GW and HSE06 methods yield consistent electronic structure properties for all studied compounds. We observed a consistent increase in both internal and external band gaps, as well as metallic bandwidths, across all pn-type cold metal systems. Notably, the internal band gap E^I_g exhibits the most substantial enhancement, highlighting the sensitivity of these materials to correlation effects. In contrast, the changes in the metallic bandwidth W_m and external band gap E^E_g are relatively modest. These findings offer valuable insights for designing and optimizing cold metal-based devices. Materials like NbSi_2N_4, NbGe_2N_4, and TaSi_2N_4 show particular promise for high-performance NDR tunnel diodes and sub-60 mV/dec SS FETs.

cond-mat.mtrl-sci↗

arXiv2024

Spin gapped metals: A novel class of materials for multifunctional spintronic devices

Gapped metals, a recently proposed class of materials, possess a band gap slightly above or below the Fermi level, behaving as intrinsic p- or n-type semiconductors without requiring external doping. Inspired by this concept, we propose a novel material class: "spin gapped metals". These materials exhibit intrinsic p- or n-type character independently for each spin channel, similar to dilute magnetic semiconductors but without the need for transition metal doping. A key advantage of spin gapped metals lies in the absence of band tails that exist within the band gap of conventional p- and n-type semiconductors. Band tails degrade the performance of devices like tunnel field-effect transistors (causing high subthreshold slopes) and negative differential resistance tunnel diodes (resulting in low peak-to-valley current ratios). Here, we demonstrate the viability of spin gapped metals using first-principles electronic band structure calculations on half-Heusler compounds. Our analysis reveals compounds displaying both gapped metal and spin gapped metal behavior, paving the way for next-generation multifunctional devices in spintronics and nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2022

Ab-initio calculation of the Hubbard $U$ and Hund exchange $J$ in local moment magnets: The case of Mn-based full Heusler compounds

Mn-based full Heusler compounds possess well-defined local atomic Mn moments, and thus the correlation effects between localized d electrons are expected to play an important role in determining the electronic and magnetic properties of these materials. Employing ab-initio calculations in conjunction with the constrained random-phase approximation (cRPA) method, we calculate the strength of the effective on-site Coulomb interaction parameters (Hubbard U and Hund exchange J) in the case of X2MnZ full Heusler compounds with X being one of Ni, Pd or Cu, and Z being one of In, Sn, Sb or Te. We show that the Z element (or sp element) in Heusler compounds significantly reduces the strength of the Hubbard U parameter for Mn 3d electrons compared to the elementary bulk Mn. On the contrary, the effect of the sp-atom on the strength of the U parameter of Ni, Cu or Pd valence d electrons is not so substantial with respect to the elementary bulk values. The U values for all transition metal atoms decrease with increasing sp electron number in the In-Sn-Sb-Te sequence. Our cRPA calculations reveal that despite their well-defined local magnetic moments, the Mn-based full Heusler alloys fall into the category of the weakly correlated materials.

cond-mat.mtrl-sci↗

arXiv2021

Strength of effective Coulomb interaction in two-dimensional transition-metal Halides MX$_2$ and MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I)

We calculate the strength of the effective onsite Coulomb interaction (Hubbard $U$) in two-dimensional (2D) transition-metal (TM) dihalides MX$_2$ and trihalides MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I) from first principles using the constrained random-phase approximation. The correlated subspaces are formed from $t_{2g}$ or $e_g$ bands at the Fermi energy. Elimination of the efficient screening taking place in these narrow bands gives rise to sizable interaction parameters U between the localized $t_{2g}$ ($e_g$) electrons. Due to this large Coulomb interaction, we find $U/W >1$ (with the band width $W$) in most TM halides, making them strongly correlated materials. Among the metallic TM halides in paramagnetic state, the correlation strength $U/W$ reaches a maximum in NiX$_2$ and CrX$_3$ with values much larger than the corresponding values in elementary TMs and other TM compounds. Based on the Stoner model and the calculated $U$ and $J$ values, we discuss the tendency of the electron spins to order ferromagnetically.

cond-mat.str-el↗

arXiv2018

Ab-initio study of the Coulomb interaction in NbxCo clusters: Strong on-site versus weak non-local screening

By means of ab-initio calculations in conjunction with the random-phase approximation (RPA) within the full-potential linearized augmented plane wave method we study the screening of the Coulomb interaction in NbxCo (1<=x<=9) clusters. In addition, these results are compared with pure bcc Nb bulk. We find that for all clusters the onsite Coulomb interaction in RPA is strongly screened whereas the inter-site non-local Coulomb interaction is weakly screened and for some clusters it is unscreened or even anti-screened. This is in strong contrast with pure Nb bulk, where the inter-site Coulomb interaction is almost completely screened. Further, constrained RPA calculations reveal that the contribution of the Co 3d ! 3d channel to the total screening of the Co 3d electrons is small. Moreover, we find that both the onsite and inter-site Coulomb interaction parameters decrease in a reasonable approximation linearly with the cluster size and for clusters having more than 20 Nb atoms a transition from 0D to 3D screening is expected to take place.

cond-mat.mtrl-sci↗

arXiv2017

Local magnetic moments in iron and nickel at ambient and Earth's core conditions

Some Bravais lattices have a particular geometry that can slow down the motion of Bloch electrons by pre-localization due to the band-structure properties. Another known source of electronic localization in solids is the Coulomb repulsion in partially filled d- or f-orbitals, which leads to the formation of local magnetic moments. The combination of these two effects is usually considered of little relevance to strongly correlated materials. Here we show that it represents, instead, the underlying physical mechanism in two of the most important ferromagnets: nickel and iron. In nickel, the van Hove singularity has an unexpected impact on the magnetism. As a result, the electron-electron scattering rate is linear in temperature, in violation of the conventional Landau theory of metals. This is true even at Earth's core pressures, at which iron is instead a good Fermi liquid. The importance of nickel in models of geomagnetism may have therefore to be reconsidered.

cond-mat.str-el↗

arXiv2017

A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds

Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic/magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the $GW$ approximation, which allows an elaborate treatment of the electronic correlations, to simulate the electronic band structure of these materials. Our results suggest that in most cases the use of $GW$ self energy instead of the usual density functionals is important to accurately determine the electronic properties of magnetic semiconductors.

cond-mat.mtrl-sci↗

arXiv2017

Nonconventional screening of the Coulomb interaction in FexOy clusters: An ab-initio study

From microscopic point-dipole model calculations of the screening of the Coulomb interaction in non-polar systems by polarizable atoms, it is known that screening strongly depends on dimensionality. For example, in one dimensional systems the short range interaction is screened, while the long range interaction is anti-screened. This anti-screening is also observed in some zero dimensional structures, i.e. molecular systems. By means of ab-initio calculations in conjunction with the random-phase approximation (RPA) within the FLAPW method we study screening of the Coulomb interaction in FexOy clusters. For completeness these results are compared with their bulk counterpart magnetite. It appears that the onsite Coulomb interaction is very well screened both in the clusters and bulk. On the other hand for the intersite Coulomb interaction the important observation is made that it is almost contant throughout the clusters, while for the bulk it is almost completely screened. More precisely and interestingly, in the clusters anti-screening is observed by means of ab-initio calculations.

physics.atm-clus↗

arXiv2017

Design of L2_1-type antiferromagnetic semiconducting full-Heusler compounds: A first principles DFT+GW study

Antiferromagnetic spintronics is an on-going growing field of research. Employing both standard density functional theory and the $GW$ approximation within the framework of the FLAPW method, we study the electronic and magnetic properties of seven potential antiferromagnetic semiconducting Heusler compounds with 18 (or 28 when Zn is present) valence electrons per unit cell. We show that in these compounds G-type antiferromagnetism is the ground state and that they are all either emiconductors (Cr$_2$ScP, Cr$_2$TiZn, V$_2$ScP, V$_2$TiSi, and V$_3$Al) or semimetals (Mn$_2$MgZn and Mn$_2$NaAl). The many-body corrections have a minimal effect on the electronic band structure with respect to the standard electronic structure calculations.

cond-mat.mtrl-sci↗

arXiv2016

Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors

Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the quasi-particle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the \textit{sp}-electron based semiconductors such as Si and GaAs, in these systems the many-body corrections have a minimal effect on the electronic band structure and the energy band gap increases by less than 0.2~eV, which makes the starting point density functional theory (DFT) a good approximation for the description of electronic and optical properties of these materials. Furthermore, the band gap can be tuned either by the variation of the lattice parameter or by the substitution of the \emph{sp}-chemical element.

cond-mat.mtrl-sci↗

arXiv2015

First-principles calculations of exchange interactions, spin waves, and temperature dependence of magnetization in inverse-Heusler-based spin gapless semiconductors

Employing first principles electronic structure calculations in conjunction with the frozen-magnon method we calculate exchange interactions, spin-wave dispersion, and spin-wave stiffness constants in inverse-Heusler-based spin gapless semiconductor (SGS) compounds Mn$_2$CoAl, Ti$_2$MnAl, Cr$_2$ZnSi, Ti$_2$CoSi and Ti$_2$VAs. We find that their magnetic behavior is similar to the half-metallic ferromagnetic full-Heusler alloys, i.e., the intersublattice exchange interactions play an essential role in the formation of the magnetic ground state and in determining the Curie temperature, $T_\mathrm{c}$. All compounds, except Ti$_2$CoSi possess a ferrimagnetic ground state. Due to the finite energy gap in one spin channel, the exchange interactions decay sharply with the distance, and hence magnetism of these SGSs can be described considering only nearest and next-nearest neighbor exchange interactions. The calculated spin-wave dispersion curves are typical for ferrimagnets and ferromagnets. The spin-wave stiffness constants turn out to be larger than those of the elementary 3$d$-ferromagnets. Calculated exchange parameters are used as input to determine the temperature dependence of the magnetization and $T_\mathrm{c}$ of the SGSs. We find that the $T_\mathrm{c}$ of all compounds is much above the room temperature. The calculated magnetization curve for Mn$_2$CoAl as well as the Curie temperature are in very good agreement with available experimental data. The present study is expected to pave the way for a deeper understanding of the magnetic properties of the inverse-Heusler-based SGSs and enhance the interest in these materials for application in spintronic and magnetoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2013

NiS - An unusual self-doped, nearly compensated antiferromagnetic metal

NiS, exhibiting a text-book example of a first-order transition with many unusual properties at low temperatures, has been variously described in terms of conflicting descriptions of its ground state during the past several decades. We calculate these physical properties within first-principle approaches based on the density functional theory and conclusively establish that all experimental data can be understood in terms of a rather unusual ground state of NiS that is best described as a self-doped, nearly compensated, antiferromagnetic metal, resolving the age-old controversy. We trace the origin of this novel ground state to the specific details of the crystal structure, band dispersions and a sizable Coulomb interaction strength that is still sub-critical to drive the system in to an insulating state. We also show how the specific antiferromagnetic structure is a consequence of the less-discussed 90 degree and less than 90 degree superexchange interactions built in to such crystal structures.

cond-mat.str-el↗

arXiv2013

Tuning the Curie temperature of FeCo compounds by tetragonal distortion

Combining density-functional theory calculations with a classical Monte Carlo method, we show that for B2-type FeCo compounds tetragonal distortion gives rise to a strong reduction of the Curie temperature $T_{\mathrm{C}}$. The $T_{\mathrm{C}}$ monotonically decreases from 1575 K (for $c/a=1$) to 940 K (for $c/a=\sqrtwo$). We find that the nearest neighbor Fe-Co exchange interaction is sufficient to explain the $c/a$ behavior of the $T_{\mathrm{C}}$. Combination of high magnetocrystalline anisotropy energy with a moderate $T_{\mathrm{C}}$ value suggests tetragonal FeCo grown on the Rh substrate with $c/a=1.24$ to be a promising material for heat-assisted magnetic recording applications.

cond-mat.mtrl-sci↗

arXiv2012

Theoretical investigation into the possibility of very large moments in Fe16N2

We examine the mystery of the disputed high-magnetization α"-Fe16N2 phase, employing the Heyd-Scuseria-Ernzerhof screened hybrid functional method, perturbative many-body corrections through the GW approximation, and onsite Coulomb correlations through the GGA+U method. We present a first-principles computation of the effective on-site Coulomb interaction (Hubbard U) between localized 3d electrons employing the constrained random-phase approximation (cRPA), finding only somewhat stronger on-site correlations than in bcc Fe. We find that the hybrid functional method, the GW approximation, and the GGA+U method (using parameters computed from cRPA) yield an average spin moment of 2.9, 2.6 - 2.7, and 2.7 μ_B per Fe, respectively.

cond-mat.mtrl-sci↗

arXiv2012

Generalized Slater-Pauling rule for the inverse Heusler compounds

We present extensive first-principles calculations on the inverse full-Heusler compounds having the chemical formula X$_2$YZ where (X = Sc, Ti, V, Cr or Mn), (Z = Al, Si or As) and the Y ranges from Ti to Zn. Several of these alloys are identified to be half-metallic magnets. We show that the appearance of half-metallicity is associated in all cases to a Slater-Pauling behavior of the total spin-magnetic moment. There are three different variants of this rule for the inverse Heusler alloys depending on the chemical type of the constituent transition-metal atoms. Simple arguments regarding the hybridization of the d-orbitals of neighboring atoms can explain these rules. We expect our results to trigger further experimental interest on this type of half-metallic Heusler compounds.

cond-mat.mtrl-sci↗

arXiv2012

Search for spin gapless semiconductors: The case of inverse Heusler compounds

We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.

cond-mat.mtrl-sci↗

arXiv2012

Robustness and stability of half-metallic ferromagnetism in alkaline-earth metal mononitrides against doping and deformation

We employ ab-initio electronic structure calculations and study the magnetic properties of CaN and SrN compounds crystallizing in the rocksalt structure. These alkaline-earth metal mononitrides are found to be half-metallic with a total spin magnetic moment per formula unit of 1.0 $μ_B$. The Curie temperature is estimated to be 480 K for CaN and 415 K for SrN well-above the room temperature. Upon small degrees of doping with holes or electrons, the rigid-band model suggests that the magnetic properties are little affected. Finally we studied for these alloys the effect of deformation taking into account tetragonalization keeping constant the unit cell volume which models the growth on various substrates. Even large degrees of deformation only marginally affect the electronic and magnetic properties of CaN and SrN in the rocksalt structure. Finally, we show that this stands also for the zincblende structure. Our results suggest that alkaline-earth metal mononitrides are promising materials for magnetoelectronic applications.

cond-mat.mtrl-sci↗