arXiv subjects

E. Tan

Publications and source records attributed to E. Tan.

3 recordsLinked to original sources

arXiv2024

KIT Superconducting Undulator Development -- Story of a successful industrial collaboration & future prospects

Undulators are X-ray sources widely used in synchrotron storage rings and free-electron laser facilities. With the commercial availability of low-temperature superconductors, a new type of undulator was born, the superconducting undulator (SCU). In this context, the industrial cooperation between the Karlsruhe Institute of Technology and Bilfinger Nuclear and Energy Transition GmbH started more than 15 years ago. Since then, many projects have been successfully completed, leading to the production of the world's leading full-scale commercial SCUs based on conduction cooling. Starting with the SCU15, the first of its kind installed SCU providing light to a beamline, followed by the SCU20 installed and still in operation at the Karlsruhe Research Accelerator. The successful realisation of such SCUs has required the simultaneous development of appropriate measurement facilities such as CASPER I and CASPER II.

physics.acc-ph↗

arXiv2005

Tunneling spectroscopy studies of aluminum oxide tunnel barrier layers

We report scanning tunneling microscopy and ballistic electron emission microscopy studies of the electronic states of the uncovered and chemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These states change when chemisorbed oxygen ions are moved into the oxide by either flood gun electron bombardment or by thermal annealing. The former, if sufficiently energetic, results in locally well defined conduction band onsets at ~1 V, while the latter results in a progressively higher local conduction band onset, exceeding 2.3 V for 500 and 600 C thermal anneals.

cond-mat.mtrl-sci↗

arXiv2005

Oxygen stoichiometry and instability in aluminium oxide tunnel barrier layers

We present X-ray photoelectron spectroscopy data which show that the chemisorbed oxygen previously observed to be on the surface of thin AlOx layers formed by room temperature thermal oxidation is bound by oxygen vacancies in the oxide. Increasing the electric field across the oxide, either by over-coating with a metallic electrode, or by electron bombardment, drives this surface chemisorbed oxygen into the vacancy sites. Due to the low bonding energies of these oxygen sites, subsequent oxygen exposures draw these ions back to the surface, reforming chemisorbed O$_2^-$. Al/AlOx/Al tunnel junctions incorporating electron bombarded AlOx barriers show a significant reduction in the low frequency junction resistance noise level at 4.2 K.

cond-mat.mtrl-sci↗