arXiv subjects

E. V. Anda

Publications and source records attributed to E. V. Anda.

35 records · Page 2Linked to original sources

arXiv2008

Negative differential conductance induced by electronic correlation in a double quantum-dot molecule

Electron tunneling through a two stage Kondo system constituted by a double quantum-dot molecule side coupled to a quantum wire, under the effect of a finite external potential is studied. We found that $I$-$V$ characteristic shows a negative differential conductance region induced by the electronic correlation. This phenomenon is a consequence of the properties of the two stage Kondo regime under the effect of an external applied potential that takes the system out of equilibrium. The problem is solved using the mean-field finite-$U$ slave-boson formalism.

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arXiv2007

Kondo effect in transport through molecules adsorbed on metal surfaces: from Fano dips to Kondo peaks

The Kondo effect observed in recent STM experiments on transport through CoPc and TBrPP-Co molecules adsorbed on Au(111) and Cu(111) surfaces, respectively, is discussed within the framework of a simple model (Phys. Rev. Lett. {\bf 97}, 076806 (2006)). It is shown that, in the Kondo regime and by varying the adequate model parameters, it is possible to produce a crossover from a conductance Kondo peak (CoPc) to a conductance Fano dip (TBrPP-Co). In the case of TBrPP-Co/Cu(111) we show that the model reproduces the changes in the shape of the Fano dip, the raising of the Kondo temperature and shifting to higher energies of the dip minimum when the number of nearest neighbors molecules is lowered. These features are in line with experimental observations indicating that our simple model contains the essential physics underlying the transport properties of such complex molecules.

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arXiv2007

Phonon-assisted tunneling regimes in diatomic molecules

Electronic transport in diatomic molecules (two-level systems) connected to metallic contacts is analyzed in the presence of competing electron-electron and electron-phonon interactions. We show that phonon emission and absorption processes are strongly modified when a Coulomb energy $U$ is included, as the phonons open channels that can result in destructive or constructive interference effects. Resonance conditions for these processes produce dramatic effects both in the density of states at the molecular sites, as well as in the conductance through the system. We find in particular an enhanced {\it Rabi-assisted tunneling} due to phonons, as the resonance conditions are met, which is made more evident for increasing temperatures. These effects are controllable by voltage gating of the molecular sites, and should be accessible in current experiments.

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arXiv2006

Anomalous Kondo Spin Splitting in Quantum Dots

The Zeeman splitting of localized electrons in a quantum dot in the Kondo regime is studied using a new slave-boson formulation. Our results show that the Kondo peak splitting depends on the gate potential applied to the quantum dot and on the topology of the system. A common fact of any geometry is that the differential susceptibility shows a strong non linear behavior. It was shown that there exist a critical field above which the Kondo resonance is splitted out. This critical field rapidly diminishes when the gate potential is lowered, as a consequence of the reduction of the Kondo temperature and a subsequent strong enhancement in the differential susceptibility occurring at low fields. The critical field is also strong depedent on the topology of the circuit. Above this critical field the Zeeman splitting depends linearly upon the magnetic field and does not extrapolate to zero at zero field. The magnitude of the Y-intercept coordinate depends on the gate potential but the slope of this function is not renormalized being independent of the value of the gate potential. Our results are in agreement with very recent experiments.

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arXiv2005

Kondo Regime of a Quantum Dot Molecule: A Finite-U Slave-Boson Approach

We study the electronic transport in a double quantum dot structure connected to leads in the Kondo regime for both series and parallel arrangements. By applying a finite-U slave boson technique in the mean field approximation we explore the effect of level degeneracy in the conductance through the system. Our results show that for the series connection, as the energy difference of the localized dot levels increases, the tunneling via the Kondo state is destroyed. For the parallel configuration, we find an interesting interplay of state symmetry and conductance. Our results are in good agrement with those obtained with other methods, and provide additional insights into the physics of the Kondo state in the double dot system.

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arXiv2005

Phonon Rabi-assisted tunneling in diatomic molecules

We study electronic transport in diatomic molecules connected to metallic contacts in the regime where both electron-electron and electron-phonon interactions are important. We find that the competition between these interactions results in unique resonant conditions for interlevel transitions and polaron formation: the Coulomb repulsion requires additional energy when electrons attempt phonon-assisted interlevel jumps between fully or partially occupied levels. We apply the equations of motion approach to calculate the electronic Green's functions. The density of states and conductance through the system are shown to exhibit interesting Rabi-like splitting of Coulomb blockade peaks and strong temperature dependence under the it interacting resonant conditions.

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arXiv2005

Transport properties of strongly correlated electrons in quantum dots using a simple circuit model

Numerical calculations are shown to reproduce the main results of recent experiments involving nonlocal spin control in nanostructures (N. J. Craig et al., Science 304, 565 (2004)). In particular, the splitting of the zero-bias-peak discovered experimentally is clearly observed in our studies. To understand these results, a simple "circuit model" is introduced and shown to provide a good qualitative description of the experiments. The main idea is that the splitting originates in a Fano anti-resonance, which is caused by having one quantum dot side-connected in relation to the current's path. This scenario provides an explanation of Craig et al.'s results that is alternative to the RKKY proposal, which is here also addressed.

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arXiv2004

Phase Effects on the Conductance Through Parallel Double Dots

Phase effects on the conductance of a double-dot system in a ring structure threaded by a magnetic flux are studied. The Aharonov-Bohm effect combined with the dot many-body charging effects determine the phases of the currents going through each arm of the ring. The cases for zero magnetic flux or half a quantum of flux are discussed in detail. It is shown that, depending upon the magnetic flux and the state of charge of the dots, controlled by gate potentials, the dephasing of the upper and lower arm current gives rise to a $S=1/2$ or S=1 Kondo regime. We also show that even in the absence of a magnetic flux there can be a circulating current in the ring, depending on the system parameters.

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arXiv2004

Effect of topology on the transport properties of two interacting dots

The transport properties of a system of two interacting dots, one of them directly connected to the leads constituting a side-coupled configuration (SCD), are studied in the weak and strong tunnel-coupling limits. The conductance behavior of the SCD structure has new and richer physics than the better studied system of two dots aligned with the leads (ACD). In the weak coupling regime and in the case of one electron per dot, the ACD configuration gives rise to two mostly independent Kondo states. In the SCD topology, the inserted dot is in a Kondo state while the side-connected one presents Coulomb blockade properties. Moreover, the dot spins change their behavior, from an antiferromagnetic coupling to a ferromagnetic correlation, as a consequence of the interaction with the conduction electrons. The system is governed by the Kondo effect related to the dot that is embedded into the leads. The role of the side-connected dot is to introduce, when at resonance, a new path for the electrons to go through giving rise to the interferences responsible for the suppression of the conductance. These results depend on the values of the intra-dot Coulomb interactions. In the case where the many-body interaction is restricted to the side-connected dot, its Kondo correlation is responsible for the scattering of the conduction electrons giving rise to the conductance suppression.

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arXiv2003

Electron-phonon interaction effects in semiconductor quantum dots: a non-perturbative approach

Multiphonon processes in a model quantum dot (QD) containing two electronic states and several optical phonon modes are considered taking into account both intra- and inter-level terms. The Hamiltonian is exactly diagonalized including a finite number of multi-phonon processes, large enough as to guarantee that the result can be considered exact in the physically important region of energies. The physical properties are studied by calculating the electronic Green's function and the QD dielectric function. When both the intra- and inter-level interactions are included, the calculated spectra allow for explanation of several previously published experimental results obtained for spherical and self-assembled QDs, such as enhanced 2LO phonon replica in absorption spectra and up-converted photoluminescence. An explicit calculation of the spectral line shape due to intra-level interaction with a continuum of acoustic phonons is presented, where the multi-phonon processes also are shown to be important. It is pointed out that such an interaction, under certain conditions, can lead to relaxation in the otherwise stationary polaron system.

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arXiv2002

Fano resonance in electronic transport through a quantum wire with a side-coupled quantum dot: X-boson treatment

The transport through a quantum wire with a side coupled quantum dot is studied. We use the X-boson treatment for the Anderson single impurity model in the limit of $U=\infty $. The conductance presents a minimum for values of T=0 in the crossover from mixed-valence to Kondo regime due to a destructive interference between the ballistic channel associated with the quantum wire and the quantum dot channel. We obtain the experimentally studied Fano behavior of the resonance. The conductance as a function of temperature exhibits a logarithmic and universal behavior, that agrees with recent experimental results.

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arXiv2001

Effect of a Variable-Spin Quantum Dot on a Wire Conductance

A numerically exact calculation of the T=0 transport properties of a quantum wire interacting with a lateral two-level quantum dot is presented. The wire conductance is calculated for all different states of charge and spin of the quantum dot. For a dot with two electrons we obtain an enhancement of the Kondo temperature at the singlet-triplet transition and a non-universal scaling law for its dependence upon the dot energy spacing. We find that the Kondo correlation is stronger for a dot spin $S_D \sim 1$ than for $S_D \sim 1/2$. In both cases the wire current is totally quenched by the Kondo effect. When the dot is in the mixed-valence regime and $1/2 < S_D < 1$ the wire conductance is partially quenched except in a very small region of gate potential where it reaches the maximum value $e^2/h$.

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arXiv2001

Kondo Effect and Persistent Currents in a Mesoscopic Ring: Numerically Exact Results

We study the persistent current circulating along a mesoscopic ring with a dot side-coupled to it when threaded by a magnetic field. A cluster including the dot and its vicinity is diagonalized and embedded into the rest of the system. The result is numerically exact. We show that a ring of any size can be in the Kondo regime, although for small sizes it depends upon the magnetic flux. In the Kondo regime, the current can be a smooth or a strongly dependent function of the gate potential according to the structure of occupation of the highest energetic electrons of the system.

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arXiv2000

Time Dependent Current Oscillations Through a Quantum Dot

Time dependent phenomena associated to charge transport along a quantum dot in the charge quantization regime is studied. Superimposed to the Coulomb blockade behaviour the current has novel non-linear properties. Together with static multistabilities in the negative resistance region of the I-V characteristic curve, strong correlations at the dot give rise to self-sustained current and charge oscillations. Their properties depend upon the parameters of the quantum dot and the external applied voltages.

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arXiv1999

Transport in Coupled Quantum Dots: Kondo Effect Versus Anti-Ferromagnetic Correlation

The interplay between the Kondo effect and the inter-dot magnetic interaction in a coupled-dot system is studied. An exact result for the transport properties at zero temperature is obtained by diagonalizing a cluster, composed by the double-dot and its vicinity, which is connected to leads. It is shown that the system goes continuously from the Kondo regime to an anti-ferromagnetic state as the inter-dot interaction is increased. The conductance, the charge at the dots and the spin-spin correlation are obtained as a function of the gate potential.

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arXiv1999

Non Linear Effects in Resonant Tunneling Throught a Quantum Dot

We study non-linear phenomena in quantum dots. Non linearities are reflected in the I-V characteristic curve as bistabilities, instabilities and time dependent oscillations of the currents. The nature of the non-linear behavior depends upon the parameters that define the system.

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arXiv1998

Non-Linear Effects in Resonant Tunneling; Bistabilities and Self-Sustained Oscillating Currents

We study non-linear phenomena in double barrier heterostructures. Systems in 3D under the effect of an external magnetic field along the current and 1D systems are analyzed. Non-linearities are reflected in the I-V characteristic curve as bistabilities, instabilities and time dependent oscillations of the currents. The nature of the non-linear behavior depends upon the parameters that define the system.

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