arXiv subjects

E. V. Kurganova

Publications and source records attributed to E. V. Kurganova.

8 recordsLinked to original sources

arXiv2013

Fine structure of the lowest Landau level in suspended trilayer graphene

Magneto-transport experiments on ABC-stacked suspended trilayer graphene reveal a complete splitting of the twelve-fold degenerated lowest Landau level, and, in particular, the opening of an exchange-driven gap at the charge neutrality point. A quantitative analysis of distinctness of the quantum Hall plateaus as a function of field yields a hierarchy of the filling factors: ν=6, 4, and 0 are the most pronounced, followed by ν=3, and finally ν=1, 2 and 5. Apart from the appearance of a ν=4 state, which is probably caused by a layer asymmetry, this sequence is in agreement with Hund's rules for ABC-stacked trilayer graphene.

cond-mat.mes-hall↗

arXiv2013

Quantized coexisting electrons and holes in graphene measured using temperature dependent magneto-transport

We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental value $s \approx 20$ meV is considerably larger than in conventional semiconductors which implies a strong localization of charge carriers observable up to room temperature. Surprisingly, in the quantized regime, the Hall resistivity overshoots the highest plateau values at high temperatures. We demonstrate by model calculations that such a peculiar behavior is expected in any system with coexisting electrons and holes when the energy spectrum is quantized and the carriers are partially localized.

cond-mat.mes-hall↗

arXiv2012

Field induced quantum-Hall ferromagnetism in suspended bilayer graphene

We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.

cond-mat.mes-hall↗

arXiv2011

Coexistence of electron and hole transport in graphene

When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at ν=0 made up by both electrons and holes.

cond-mat.mes-hall↗

arXiv2011

Spin splitting in graphene studied by means of tilted magnetic-field experiments

We have measured the spin splitting in single-layer and bilayer graphene by means of tilted magnetic field experiments. Applying the Lifshitz-Kosevich formula for the spin-induced decrease of the Shubnikov de Haas amplitudes with increasing tilt angle we directly determine the product between the carrier cyclotron mass m* and the effective g-factor g* as a function of the charge carrier concentration. Using the cyclotron mass for a single-layer and a bilayer graphene we find an enhanced g-factor g* = 2.7 \pm 0.2 for both systems.

cond-mat.mes-hall↗

arXiv2010

Quantum Hall activation gaps in bilayer graphene

We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $ν=\pm4$ and $ν=\pm8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magnetic field.

cond-mat.mes-hall↗

arXiv2010

Generation of energy selective excitations in quantum Hall edge states

We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states.

cond-mat.mes-hall↗

arXiv2010

Constructive role of non-adiabaticity for quantized charge pumping

We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to realize single-parameter pumping, while in previous multi-parameter pumping schemes it caused unwanted and less controllable currents. In this paper we demonstrate experimentally the constructive and destructive role of non-adiabaticity by analysing the pumping current over a broad frequency range.

cond-mat.mes-hall↗