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E. Z. Kurmaev

Publications and source records attributed to E. Z. Kurmaev.

At least 19 recordsLinked to original sources

Fundamental Crystal Field Excitations in Magnetic Semiconductor SnO$_2$:Mn,Fe,Co,Ni

Directly measuring elementary electronic excitations in dopant $3d$ metals is essential to understanding how they function as part of their host material. Through calculated crystal field splittings of the $3d$ electron band it is shown how transition metals Mn, Fe, Co, and Ni are incorporated into SnO$_2$. The crystal field splittings are compared to resonant inelastic x-ray scattering (RIXS) experiments, which measure precisely these elementary $dd$ excitations. The origin of spectral features can be determined and identified via this comparison, leading to an increased understanding of how such dopant metals situate themselves in, and modify the host's electronic and magnetic properties; and also how each element differs when incorporated into other semiconducting materials. We found that oxygen vacancy formation must not occur at nearest neighbour sites to metal atoms, but instead must reside at least two coordination spheres beyond. The coordination of the dopants within the host can then be explicitly related to the $d$-electron configurations and energies. This approach facilitates an understanding of the essential link between local crystal coordination and electronic/magnetic properties.

cond-mat.mtrl-sci

XPS evidence of degradation mechanism in hybrid halide perovskites

The paper presents the results of measurements of XPS valence band spectra of SiO2/MAPbI3 hybrid perovskites subjected to irradiation with visible light and annealing at an exposure of 0-1000 hours. It is found from XPS survey spectra that in both cases (irradiation and annealing) a decrease in the I:Pb ratio is observed with aging time, which unambiguously indicates PbI2 phase separation as a photo and thermal product of degradation. The comparison of the XPS valence band spectra of irradiated and annealed perovskites with density functional theory calculations of the MAPbI3 and PbI2 compounds have shown a systematic decrease in the contribution of I 5p-states and allowed us to determine the threshold for degradation, which is 500 hours for light irradiation and 200 hours for annealing.

physics.app-ph

Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies

Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of the oxidation of carbon cover. The density functional theory calculations suggest that for the case of substitutional (graphitic) boron-defect only the oxidation near boron impurity is energetically favorable and creation of the vacancies that can induce the oxidation of copper substrate is energetically unfavorable. In the case of non-graphitic boron defects oxidation of the area, a nearby impurity is metastable that not only prevent oxidation but makes boron-doped graphene. Modeling of oxygen reduction reaction demonstrates high catalytic performance of these materials.

cond-mat.mtrl-sci

Electronic structure, charge transfer, and intrinsic luminescence of gadolinium oxide nanoparticles: Experiment and theory

The cubic (c) and monoclinic (m) polymorphs of Gd2O3 were studied using the combined analysis of several materials science techniques - X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectroscopy. Density functional theory (DFT) based calculations for the samples under study were performed as well. The cubic phase of gadolinium oxide (c-Gd2O3) synthesized using a precipitation method exhibits spheroidal-like nanoclusters with well-defined edges assembled from primary nanoparticles with an average size of 50 nm, whereas the monoclinic phase of gadolinium oxide (m-Gd2O3) deposited using explosive pyrolysis has a denser structure compared with natural gadolinia. This phase also has a structure composed of three-dimensional complex agglomerates without clear-edged boundaries that are ~21 nm in size plus a cubic phase admixture of only 2 at. % composed of primary edge-boundary nanoparticles ~15 nm in size. These atomic features appear in the electronic structure as different defects ([Gd...O-OH] and [Gd...O-O]) and have dissimilar contributions to the charge-transfer processes among the appropriate electronic states with ambiguous contributions in the Gd 5p - O 2s core-like levels in the valence band structures. The origin of [Gd...O-OH] defects found by XPS was well-supported by PL analysis. The electronic and atomic structures of the synthesized gadolinias calculated using DFT were compared and discussed on the basis of the well-known joint OKT-van der Laan model, and good agreement was established.

cond-mat.mes-hall

Atomic and electronic structures of stable linear carbon chains on Ag-nanoparticles

In this work, we report X-ray photoelectron (XPS) and valence band (VB) spectroscopy measurements of surfactant-free silver nanoparticles and silver/linear carbon chains (Ag@LCC) structures prepared by pulse laser ablation (PLA) in water. Our measurements demonstrate significant oxidation only on the surfaces of the silver nanoparticles with many covalent carbon-silver bonds but only negligible traces of carbon-oxygen bonds. Theoretical modeling also provides evidence of the formation of robust carbon-silver bonds between linear carbon chains and pure and partially oxidized silver surfaces. A comparison of theoretical and experimental electronic structures also provides evidence of the presence of non-oxidized linear carbon chains on silver surfaces. To evaluate the chemical stability, we investigated the energetics of the physical adsorption of oxidative species (water and oxygen) and found that this adsorption is much preferrable on oxidized or pristine silver surfaces than the adsorption of linear carbon chains, which makes the initial step in the oxidation of LCC energetically unfavorable.

cond-mat.mes-hall

Atomic and electronic structure of a copper/graphene interface as prepared and 1.5 years after

We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results were compared with density functional theory calculations of the formation energies and electronic structures of various structural defects in graphene/Cu interfaces. For evaluation of the stability of the carbon cover, we propose a two-step model. The first step is oxidation of the graphene, and the second is perforation of graphene with the removal of carbon atoms as part of the carbon dioxide molecule. Results of the modeling and experimental measurements provide evidence that graphene grown on high-quality copper substrate becomes robust and stable in time (1.5 years). However, the stability of this interface depends on the quality of the graphene and the number of native defects in the graphene and substrate. The effect of the presence of a metallic substrate with defects on the stability and electronic structure of graphene is also discussed.

cond-mat.mtrl-sci

Enhanced clustering tendency of Cu-impurities with a number of oxygen vacancies in heavy carbon-loaded TiO2 - the bulk and surface morphologies

The over threshold carbon-loadings (~50 at.%) of initial TiO2-hosts and posterior Cu-sensitization (~7 at.%) was made using pulsed ion-implantation technique in sequential mode with 1 hour vacuum-idle cycle between sequential stages of embedding. The final Cx-TiO2:Cu samples were qualified using XPS wide-scan elemental analysis, core-levels and valence band mappings. The results obtained were discussed on the theoretic background employing DFT-calculations. The combined XPS and DFT analysis allows to establish and prove the final formula of the synthesized samples as Cx-TiO2:[Cu+][Cu2+] for the bulk and Cx-TiO2:[Cu+][Cu0] for thin-films. It was demonstrated the in the mode of heavy carbon-loadings the remaining majority of neutral C-C bonds (sp3-type) is dominating and only a lack of embedded carbon is fabricating the O-C=O clusters. No valence base-band width altering was established after sequential carbon-copper modification of the atomic structure of initial TiO2-hosts except the dominating majority of Cu 3s states after Cu-sensitization. The crucial role of neutral carbon low-dimensional impurities as the precursors for the new phases growth was shown for Cu-sensitized Cx-TiO2 intermediate-state hosts.

cond-mat.mtrl-sci

XPS and DFT study of pulsed Bi-implantation of bulk and thin-films of ZnO - the role of oxygen imperfections

An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1x1017 cm-2 fluence, 70 min exposure under Bi-ion beam, EBi+ = 30 keV, pulsed ion-current density of not more than 0.8 mA/cm2 with a repetition rate of 12.5 Hz). The final samples were qualified by X-ray photoelectron core-level and valence band mapping spectroscopy applying ASTM materials science standard. The spectroscopy data obtained was discussed on the basis of DFT-models for Bi-embedding into ZnO host-matrices. It was established that in the case of direct Bi-impurities insertion into the employed ZnO-host for both studied morphologies neither the only "pure" Bi2O3-like phase nor the only "pure" Bi-metal will be preferable to appear as a secondary phase. An unfavorability of the large cluster agglomeration of Bi-impurities in ZnO-hosts has been shown and an oxygen 2s electronic states pleomorphizm was surely established.

cond-mat.mtrl-sci

Pleomorphic structural imperfections caused by pulsed Bi-implantation in the bulk and thin-film morphologies of TiO2

The results of combined experimental and theoretical study of substitutional and clustering effects in Bi-doped TiO2 hosts (bulk and thin-film morphologies) are presented. Bi-doping of the bulk and thin-film titanium dioxide was made with help of pulsed ion-implantation (E(Bi+) = 30 keV, D = 1 * 1017 cm-2) without posterior tempering. The X-ray photoelectron spectroscopy (XPS) qualification (core-levels and valence bands) and Density-Functional Theory (DFT) calculations were employed in order to study the electronic structure of Bi-ion implanted TiO2 samples. According to XPS data obtained and DFT calculations, the Bi -> Ti cation substitution occurs in Bi-implanted bulk TiO2, whereas in the thin-film morphology of TiO2:Bi the Bi-atoms have metal-like clusters segregation tendency. Based on the combined XPS and DFT considerations the possible reasons and mechanism for the observed effects are discussed. It is believed that established peculiarities of bismuth embedding into employed TiO2 hosts are mostly the sequence of pleomorphic origin for the formed "bismuth-oxygen" chemical bonding.

cond-mat.mtrl-sci

Sn-loss effect in a Sn-implanted a-SiO2 host-matrix after thermal annealing: A combined XPS, PL, and DFT study

Amorphous a-SiO2 host-matrices were implanted with Sn-ions with and without posterior thermal tempering at 900 °C for 1 hour in ambient air. X-ray photoelectron spectroscopy analysis (XPS core-levels, XPS valence band mapping), photoluminescence (PL) probing, and density functional calculations (DFT) were employed to enable a detailed electronic structure characterization of these samples. It was experimentally established that the process of Sn-embedding into the a-SiO2 host occurs following two dissimilar trends: the Sn4+ -> Si4+ substitution in a-SiO2:Sn (without tempering), and Sn-metal clustering as interstitials in a-SiO2:Sn (900 °C, 1 hour). Both trends were modeled using calculated formation energies and partial densities of states (PDOS) as well as valence band (VB) simulations, which yielded evidence that substitutional defect generation occurs with the help of ion-implantation stimulated translocation of the host-atoms from their stoichiometric positions to the interstitial void. Experimental and theoretical data obtained coincide in terms of the reported Sn-loss effect in a-SiO2:Sn (900 °C, 1 hour) due to thermally-induced electronic host-structure re-arraignment, which manifests as backward host-atoms translocation into stoichiometric positions and the posterior formation of Sn-metal clusters.

cond-mat.mtrl-sci

Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In$_{1-x}$Fe$_x$)$_2$O$_3$

Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In$_2$O$_3$ films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the crystal lattice which are responsible for the observed room temperature ferromagnetism. Using resonant inelastic x-ray scattering, we map out the near gap electronic structure and provide further support for this conclusion. Serving as a concrete verification of recent theoretical results and indirect experimental evidence, these results solidify the role of impurity-vacancy coupling in oxide-based DMSs.

cond-mat.mtrl-sci

Electronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing

The results of XPS core-level and valence band measurements, photoluminescence spectra of a-SiO2 implanted by Zn-ions (E=30 keV, D=1*1017 cm^-2) and Density Functional Theory calculations of electronic structure as well as formation energies of structural defects in silica glass induced by Zn-ion implantation are presented. Both theory and experiment show that it is energetically more favorable for implanted zinc ions to occupy the interstitial positions instead of cation substitution. As a result, the Zn-ions embedded to interstitials, form chemical bonds with the surrounding oxygen atoms, formation ZnO-like nanoparticles and oxygen-deficient SiOx matrix. The subsequent thermal annealing at 900 0C (1 hr) strongly reduces the amount of ZnO nanoparticles and induces the formation of α-Zn2SiO4 phase which markedly enhances the green emission.

cond-mat.mtrl-sci

The characterization of Co-nanoparticles supported on graphene

The results of density functional theory calculations and measurements using X-ray photoelectron spectroscopy of Co-nanoparticles dispersed on graphene/Cu are presented. It is found that for low cobalt thickness (0.02 nm - 0.06 nm) the Co forms islands distributed non-homogeneously which are strongly oxidized under exposure to air to form cobalt oxides. At greater thicknesses up to 2 nm the upper Co-layers are similarly oxidized whereas the lower layers contacting the graphene remain metallic. The measurements indicate a Co2+ oxidation state with no evidence of a 3+ state appearing at any Co thickness, consistent with CoO and Co[OH]2. The results show that thicker Co (2nm) coverage induces the formation of a protective oxide layer while providing the magnetic properties of Co nanoparticles.

cond-mat.mtrl-sci

Structural defects and electronic structure of N-ion implanted TiO2: bulk versus thin film

Systematic investigation of atomic structure of N-ion implanted TiO2 (thin films and bulk ceramics) was performed by XPS measurements (core levels and valence bands) and first-principles density functional theory (DFT) calculations. In bulk samples experiment and theory demonstrate anion N->O substitution. For the thin films case experiments evidence valuable contributions from N2 and NO molecule-like structures and theoretical modeling reveals a possibility of formation of these species as result of the appearance of interstitial nitrogen defects on the various surfaces of TiO2. Energetics of formation of oxygen vacancies and its key role for band gap reduction is also discussed.

cond-mat.mtrl-sci

Octahedral conversion of a-SiO2-host matrix by pulsed ion implantation

This is the abstract. The results of measurements of X-ray photoelectron spectra (XPS) of a-SiO2-host material after pulsed implantation with [Mn+] and [Co+, Mn+]-ions as well as DFT-calculations are presented. The low-energy shift is found in XPS Si 2p and O 1s core-levels of single [Mn+] and dual [Co+, Mn+] pulsed ion-implanted a-SiO2 (E = 30 keV, D = 2*10^17 cm^-2) with respect to those of untreated a-SiO2.The similar changes are found in XPS Si 2p and O 1s of stishovite compared to those of quartz. This means that the pulsed ion-implantation induces the local high pressure effect which leads to an appearance of SiO6-structural units in alpha-SiO2 host, forming "stishovite-like" local atomic structure. This process can be described within electronic bonding transition from the four-fold "quartz-like" to six-fold "stishovite-like" high-pressure phase in SiO2 host-matrix. It is found that such octahedral conversion depends on the fluence and starts with doses higher than D = 3*10^16 cm^-2.

cond-mat.mtrl-sci

XPS and DFT study of Sn incorporation into ZnO and TiO2 host matrices by pulsed ion implantation

Bulk and thin films ZnO and TiO2 samples were doped with Sn by pulsed ion implantation and studied by means of X-ray photoelectron core-level and valence band spectroscopy as well as density functional theory calculations for comprehensive study of the incorporation of Sn. XPS spectral analysis showed that isovalent Sn cation substitution occurs in both zinc oxide (Sn2+ -> Zn2+) and titanium dioxide (Sn4+ -> Ti4+) for bulk and film morphologies. For TiO2 films, the implantation also led to occupation of interstitials by doped ions, which induced the clustering of substituted and embedded Sn atoms; this did not occur in ZnO:Sn film samples. Density functional theory (DFT) formation energies were calculated of various incorporation processes, explaining the prevalence of substitutional defects in both matrices. Possible mechanisms and reasons for the observed trends in Sn incorporation into the ZnO and TiO2 matrices are discussed.

cond-mat.mtrl-sci

Characterization of TiAlSiON Coatings Deposited by Plasma Enhanced Magnetron Sputtering: XRD, XPS, and DFT Studies

The results of characterization of TiAlSiON hard coatings deposited on ferric-chromium AISI 430 stainless steel by plasma enhanced magnetron sputtering are presented. The coating with maximum hardness (of 45 GPa) was obtained at the following optimal values of elemental concentrations: Si ~5 at.%, Al ~15 at.%, and Ti ~27 at.%. The elastic modulus of the coating was 590 GPa. The reading of gaseous mixture (Ar-N2) pressure was 1*10-3 Torr and the reading of partial pressure of oxygen (O2) was 1*10-5 Torr. The X-ray diffraction (XRD) measurements showed the presence of Ti(Al)N. High-energy resolved XPS spectra of core levels revealed the formation of Ti-N, Ti-O-N, Si-N and Al-O-N bonds. Comparison of XPS valence band spectra with specially performed density functional theory calculations for two ordered and few disordered TiN1-xOx (0 =< x <= 1) demonstrates that a Ti(Al)OxNy phase is formed on the surface of AISI430 steel upon the plasma enhanced magnetron sputtering, which provides this material with a good combination of high hardness and improved oxidation resistance.

cond-mat.mtrl-sci

Electronic structure and magnetic properties of graphene/Co composites

The results of measurements of XPS spectra and magnetic properties of graphene/Co composites prepared by adding of CoCl$_2$x6H$_2$O diluted in ethyl alcohol to highly-splitted graphite are presented. XPS Co 2p measurements show two sets of 2p$_{3/2,1/2}$-lines belonging to oxidized and metallic Co-atoms. This means that metal in composite is partly oxidized. This conclusion is confirmed by magnetic measurements which show the presence of the main (from the metal) and shifted (from the oxide) hysteresis loops. The presence of oxide layer on the metal surface prevents the metal from the full oxidation and (as shown by magnetic measurements) provides the preservation of ferromagnetic properties after long exposure in ambient air which enables the use of graphene/metal composites in spintronics devices.

cond-mat.mtrl-sci