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Eamonn Hughes

Publications and source records attributed to Eamonn Hughes.

3 recordsLinked to original sources

Nonresonant optomechanical control of structural phases

Optical tweezers demonstrate how light can exert forces to trap, repel, and manipulate microscopic particles without absorption. Recent theory has suggested that such forces can extend beyond particle manipulation to drive structural phase transitions in solids. Here we apply this optomechanical principle to tin selenide (SnSe), a material where proximity to several different structural phases gives rise to its high thermoelectric figure of merit and makes it a candidate for a switchable topological crystalline insulator. Whereas the force for standard optical tweezers arises from a gradient in the intensity of a light field, the optomechanical force is mediated by a gradient in the dielectric constant as a function of phonon coordinate. Unlike conventional methods that rely on resonant excitation and absorption through the imaginary part of the dielectric function, this approach operates dispersively through the real part and can be directly driven by Raman processes, enabling selective transitions with reduced energy cost and ultrafast response. Using time-domain Raman scattering, we show that above a critical mid-infrared field strength the $A_g$ Raman modes disappear abruptly without softening, signaling the formation of a new structural phase. This phase, distinct from those induced by heating or carrier excitation, exhibits large-amplitude and long-lived modulations in its optical response. Complementing this observation, we show also evidence for an equivalent DC-field-driven structural phase transformation to a higher symmetry phase, as observed by atom probe tomography. Our study demonstrates the concept of nonresonant optomechanical phase control and defines novel opportunities for synthesizing hidden structural phases with unique functional properties.

physics.optics

Three-dimensional integration enables ultra-low-noise, isolator-free Si photonics

While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and fibers in high-precision, highly-coherent applications will require ultra-low-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format -- that is, on a single chip. Such PICs could offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. However, there are two major issues preventing the realization of such envisioned PICs: the high phase noise of semiconductor lasers, and the difficulty of integrating optical isolators directly on chip. PICs are still considered as inferior solutions in optical systems such as microwave synthesizers, optical gyroscopes and atomic clocks, despite their advantages in size, weight, power consumption and cost (SWaPC). Here, we challenge this convention by introducing three-dimensional (3D) integration in silicon photonics that results in ultra-low-noise, isolator-free PICs. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III-V gain and ultra-low-loss (ULL) silicon nitride (SiN) waveguides with optical loss around 0.5 dB/m are demonstrated. Consequently, the demonstrated PIC enters a new regime, such that an integrated ultra-high-Q cavity reduces the laser noise close to that of fiber lasers. Moreover, the cavity acts as an effective block for any downstream on-chip or off-chip reflection-induced destabilization, thus eliminating the need for optical isolators. We further showcase isolator-free, widely-tunable, low-noise, heterodyne microwave generation using two ultra-low-noise lasers on the same silicon chip.

physics.app-ph

Defects in Cd3As2 Epilayers Via Molecular Beam Epitaxy and Strategies for Reducing Them

Molecular beam epitaxy offers an exciting avenue for investigating the behavior of topological semimetal Cd3As2, by providing routes for doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to the impact of defects that are incorporated into epilayers due to contraints imposed by the substrate and narrow growth window. Here, we use a combination of lattice-matched ZnxCd1-xTe buffer layers, miscut substrates and broadband illumination to study how dislocations, twins and point defects influence the electron mobility of Cd3As2. A combination of defect suppression approaches produces Cd3As2 epilayers with electron mobilities upwards of 15,000 cm2/V-s at room temperature.

cond-mat.mtrl-sci