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Edison X. Salazar

Publications and source records attributed to Edison X. Salazar.

2 recordsLinked to original sources

Electronic Structure Calculations from Occupation Numbers on Quantum Computers

We present a quantum-classical algorithm for electronic structure calculations that dramatically reduces the quantum measurement cost of variational quantum eigensolver (VQE) approaches. While conventional VQE methods require measurements scaling as O(M^4) with system size M, the proposed occupation-number VQE (ON-VQE) reduces this cost to O(M/2) by avoiding reduced density matrix (RDM) measurements and relying exclusively on ONs. The method exploits only the diagonal elements of the one-particle RDM in the natural orbital representation, where occupations are obtained directly from computational-basis measurement outcomes. By restricting the variational ansatz to double excitations within orbital subspaces associated with electron pairs, the required measurements can be grouped into a small number of qubit-wise commuting observables, yielding an efficient and scalable measurement strategy. The approach is validated through simulations and executions on quantum hardware for the cubic H$_8$ cluster, demonstrating the feasibility of extracting accurate ONs from quantum measurements and evaluating electronic energies within the natural orbital functional (NOF) framework. Across representative molecular systems, the extracted ONs enable accurate energy evaluation with state-of-the-art NOFs while maintaining a dramatically reduced measurement cost. These results establish a scalable route toward quantum simulation of strongly correlated electronic systems, demonstrating that accurate electronic energies can be obtained from quantum measurements of ONs alone.

physics.chem-ph

Study of Some Simple Approximations to the Non-Interacting Kinetic Energy Functional

Within the framework of density functional theory, we present a study of approximations to the enhancement factor of the non-interacting kinetic energy functional $T_s[ρ]$. For this purpose, we employ the model of Liu and Parr [S. Liu and R.G. Parr, Phys. Rev. A {\bf 55}, 1792 (1997)] based on a series expansion of $T_s[ρ]$ involving powers of the density. Applications to 34 atoms, at the Hartree-Fock level showed that the enhancement factors present peaks that are in excellent agreement with those of the exact ones and give an accurate description of the shell structure of these atoms. The application of Z-dependent expansions to represent some of the terms of these approximation for neutral atoms and for positive and negative ions, which allows $T_s[ρ]$ to be cast in a very simple form, is also explored. Indications are given as to how these functionals may be applied to molecules and clusters

physics.chem-ph