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Eduardo R. Mucciolo

Publications and source records attributed to Eduardo R. Mucciolo.

At least 55 records · Page 3Linked to original sources

Quantum Corrections to Thermopower and Conductivity in Graphene

The quantum corrections to the conductivity and the thermopower in monolayer graphene are studied. We use the recursive Green's function method to calculate numerically the conductivity and the thermopower of graphene. We then analyze these weak localization corrections by fitting with the analytical theory as function of the impurity parameters and the gate potential. As a result of the quantum corrections to the thermopower, we find large magnetothermopower which is shown to provide a very sensitive measure of the size and strength of the impurities. We compare these analytical and numerical results with existing experimental measurements of magnetoconductance of single layer graphene and find that the average size and strength of the impurities in these samples can thereby be determined. We suggest favorable parameter ranges for future measurements of the magnetothermopower.

cond-mat.mes-hall↗

The single-electron transport in a three-ion magnetic molecule modulated by a transverse field

We study single-electron transport in a three-ion molecule with strong uniaxial anisotropy and in the presence of a transverse magnetic field. Two magnetic ions are connected to each other through a third, nonmagnetic ion. The magnetic ions are coupled to ideal metallic leads and a back gate voltage is applied to the molecule, forming a field-effect transistor. The microscopic Hamiltonian describing this system includes inter-ion hopping, on-site repulsions, and magnetic anisotropies. For a range of values of the parameters of the Hamiltonian, we obtain an energy spectrum similar to that of single-molecule magnets in the giant-spin approximation where the two states with maximum spin projection along the uniaxial anisotropy axis are well separated from other states. In addition, upon applying an external in-plane magnetic field, the energy gap between the ground and first excited states of the molecule oscillates, going to zero at certain special values of the field, in analogy to the diabolical points resulting from Berry phase interference in the giant spin model. Thus, our microscopic model provides the same phenomenological behavior expected from the giant spin model of a single-molecule magnet but with direct access to the internal structure of the molecule, thus making it more appropriate for realistic electronic transport studies. To illustrate this point, the nonlinear electronic transport in the sequential tunneling regime is evaluated for values of the field near these degeneracy points. We show that the existence of these points has a clear signature in the I-V characteristics of the molecule, most notably the modulation of excitation lines in the differential conductance.

cond-mat.mes-hall↗

The recursive Green's function method for graphene

We describe how to apply the recursive Green's function method to the computation of electronic transport properties of graphene sheets and nanoribbons in the linear response regime. This method allows for an amenable inclusion of several disorder mechanisms at the microscopic level, as well as inhomogeneous gating, finite temperature, and, to some extend, dephasing. We present algorithms for computing the conductance, density of states, and current densities for armchair and zigzag atomic edge alignments. Several numerical results are presented to illustrate the usefulness of the method.

cond-mat.mes-hall↗

Renyi entropies as a measure of the complexity of counting problems

Counting problems such as determining how many bit strings satisfy a given Boolean logic formula are notoriously hard. In many cases, even getting an approximate count is difficult. Here we propose that entanglement, a common concept in quantum information theory, may serve as a telltale of the difficulty of counting exactly or approximately. We quantify entanglement by using Renyi entropies S(q), which we define by bipartitioning the logic variables of a generic satisfiability problem. We conjecture that S(q\rightarrow 0) provides information about the difficulty of counting solutions exactly, while S(q>0) indicates the possibility of doing an efficient approximate counting. We test this conjecture by employing a matrix computing scheme to numerically solve #2SAT problems for a large number of uniformly distributed instances. We find that all Renyi entropies scale linearly with the number of variables in the case of the #2SAT problem; this is consistent with the fact that neither exact nor approximate efficient algorithms are known for this problem. However, for the negated (disjunctive) form of the problem, S(q\rightarrow 0) scales linearly while S(q>0) tends to zero when the number of variables is large. These results are consistent with the existence of fully polynomial-time randomized approximate algorithms for counting solutions of disjunctive normal forms and suggests that efficient algorithms for the conjunctive normal form may not exist.

cond-mat.stat-mech↗

Surface Code Threshold in the Presence of Correlated Errors

We study the fidelity of the surface code in the presence of correlated errors induced by the coupling of physical qubits to a bosonic environment. By mapping the time evolution of the system after one quantum error correction cycle onto a statistical spin model, we show that the existence of an error threshold is related to the appearance of an order-disorder phase transition in the statistical model in the thermodynamic limit. This allows us to relate the error threshold to bath parameters and to the spatial range of the correlated errors.

quant-ph↗

The role of the disorder range and electronic energy in the graphene nanoribbons perfect transmission

Numerical calculations based on the recursive Green's functions method in the tight-binding approximation are performed to calculate the dimensionless conductance $g$ in disordered graphene nanoribbons with Gaussian scatterers. The influence of the transition from short- to long-ranged disorder on $g$ is studied as well as its effects on the formation of a perfectly conducting channel. We also investigate the dependence of electronic energy on the perfectly conducting channel. We propose and calculate a backscattering estimative in order to establish the connection between the perfectly conducting channel (with $g=1$) and the amount of intervalley scattering.

cond-mat.mes-hall↗

Virtual Parallel Computing and a Search Algorithm using Matrix Product States

We propose a form of parallel computing on classical computers that is based on matrix product states. The virtual parallelization is accomplished by representing bits with matrices and by evolving these matrices from an initial product state that encodes multiple inputs. Matrix evolution follows from the sequential application of gates, as in a logical circuit. The action by classical probabilistic one-bit and deterministic two-bit gates such as NAND are implemented in terms of matrix operations and, as opposed to quantum computing, it is possible to copy bits. We present a way to explore this method of computation to solve search problems and count the number of solutions. We argue that if the classical computational cost of testing solutions (witnesses) requires less than $O(n^2)$ local two-bit gates acting on $n$ bits, the search problem can be fully solved in subexponential time. Therefore, for this restricted type of search problem, the virtual parallelization scheme is faster than Grover's quantum algorithm

quant-ph↗

Heat pumping in nanomechanical systems

We propose using a phonon pumping mechanism to transfer heat from a cold to a hot body using a propagating modulation of the medium connecting the two bodies. This phonon pump can cool nanomechanical systems without the need for active feedback. We compute the lowest temperature that this refrigerator can achieve.

cond-mat.mes-hall↗

Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers

We show that a coherent picture of the dc conductivity of monolayer and bilayer graphene at finite electronic densities emerges upon considering that strong short-range potentials are the main source of scattering in these two systems. The origin of the strong short-range potentials may lie in adsorbed hydrocarbons at the surface of graphene. The equivalence among results based on the partial-wave description of scattering, the Lippmann-Schwinger equation, and the T-matrix approach is established. Scattering due to resonant impurities close to the neutrality point is investigated via a numerical computation of the Kubo formula using a kernel polynomial method. We find that relevant adsorbate species originate impurity bands in monolayer and bilayer graphene close to the Dirac point. In the midgap region, a plateau of minimum conductivity of about $e^2/h$ (per layer) is induced by the resonant disorder. In bilayer graphene, a large adsorbate concentration can develop an energy gap between midgap and high-energy states. As a consequence, the conductivity plateau is supressed near the edges and a "conductivity gap" takes place. Finally, a scattering formalism for electrons in biased bilayer graphene, taking into account the degeneracy of the spectrum, is developed and the dc conductivity of that system is studied.

cond-mat.mes-hall↗

Bound on quantum computation time: Quantum error correction in a critical environment

We obtain an upper bound on the time available for quantum computation for a given quantum computer and decohering environment with quantum error correction implemented. First, we derive an explicit quantum evolution operator for the logical qubits and show that it has the same form as that for the physical qubits but with a reduced coupling strength to the environment. Using this evolution operator, we find the trace distance between the real and ideal states of the logical qubits in two cases. For a super-Ohmic bath, the trace distance saturates, while for Ohmic or sub-Ohmic baths, there is a finite time before the trace distance exceeds a value set by the user.

quant-ph↗

Decoherence by electromagnetic fluctuations in double-quantum-dot charge qubits

We discuss decoherence due to electromagnetic fluctuations in charge qubits formed by two lateral quantum dots. We use an effective circuit model to evaluate correlations of voltage fluctuations in the qubit setup. These correlations allows us to estimate energy (T1) and phase (T2) relaxation times of the the qubit system. Our theoretical estimate of the quality factor due to dephasing by electromagnetic fluctuations yields values much higher than those found in recent experiments, indicating that other sources of decoherence play a dominant role.

cond-mat.mes-hall↗

Uncovering the Dominant Scatterer in Graphene Sheets on SiO2

We have measured the impact of atomic hydrogen adsorption on the electronic transport properties of graphene sheets as a function of hydrogen coverage and initial, pre-hydrogenation field-effect mobility. Our results are compatible with hydrogen adsorbates inducing intervalley mixing by exerting a short-range scattering potential. The saturation coverages for different devices are found to be proportional to their initial mobility, indicating that the number of native scatterers is proportional to the saturation coverage of hydrogen. By extrapolating this proportionality, we show that the field-effect mobility can reach $1.5 \times 10^4$ cm$^2$/V sec in the absence of the hydrogen-adsorbing sites. This affinity to hydrogen is the signature of the most dominant type of native scatterers in graphene-based field-effect transistors on SiO$_2$.

cond-mat.mes-hall↗

Disorder and Electronic Transport in Graphene

In this review, we provide an account of the recent progress in understanding electronic transport in disordered graphene systems. Starting from a theoretical description that emphasizes the role played by band structure properties and lattice symmetries, we describe the nature of disorder in these systems and its relation to transport properties. While the focus is primarily on theoretical and conceptual aspects, connections to experiments are also included. Issues such as short versus long-range disorder, localization (strong and weak), the carrier density dependence of the conductivity, and conductance fluctuations are considered and some open problems are pointed out.

cond-mat.mes-hall↗

Conductance quantization and transport gap in disordered graphene nanoribbons

We study numerically the effects of edge and bulk disorder on the conductance of graphene nanoribbons. We compute the conductance suppression due to localization induced by edge scattering. We find that even for weak edge roughness, conductance steps are suppressed and transport gaps appear. These gaps are approximately inversely proportional to the nanoribbon width. On/off conductance ratios grow exponentially with the nanoribbon length. Our results impose severe limitations to the use of graphene in ballistic nanowires.

cond-mat.mes-hall↗

Hamiltonian Formulation of Quantum Error Correction and Correlated Noise: The Effects Of Syndrome Extraction in the Long Time Limit

We analyze the long time behavior of a quantum computer running a quantum error correction (QEC) code in the presence of a correlated environment. Starting from a Hamiltonian formulation of realistic noise models, and assuming that QEC is indeed possible, we find formal expressions for the probability of a faulty path and the residual decoherence encoded in the reduced density matrix. Systems with non-zero gate times (``long gates'') are included in our analysis by using an upper bound on the noise. In order to introduce the local error probability for a qubit, we assume that propagation of signals through the environment is slower than the QEC period (hypercube assumption). This allows an explicit calculation in the case of a generalized spin-boson model and a quantum frustration model. The key result is a dimensional criterion: If the correlations decay sufficiently fast, the system evolves toward a stochastic error model for which the threshold theorem of fault-tolerant quantum computation has been proven. On the other hand, if the correlations decay slowly, the traditional proof of this threshold theorem does not hold. This dimensional criterion bears many similarities to criteria that occur in the theory of quantum phase transitions.

quant-ph↗

Kondo effect in single-molecule magnet transistors

We present a careful and thorough microscopic derivation of the Kondo Hamiltonian for single-molecule magnets (SMMs) transistors. When the molecule is strongly coupled to metallic leads, we show that by applying a transverse magnetic field it is possible to topologically induce or quench the Kondo effect in the conductance of a SMM with either an integer or a half-integer spin S>1/2. This topological Kondo effect is due to the Berry phase interference between multiple quantum tunneling paths of the spin. We calculate the renormalized Berry phase oscillations of the two Kondo peaks as a function of the transverse magnetic field by means of the poor man's scaling. In particular, we show that the Kondo exchange interaction between itinerant electrons in the leads and the SMM pseudo spin 1/2 depends crucially on the SMM spin selection rules for the addition and subtraction of an electron and can range from antiferromagnetic to ferromagnetic. We illustrate our findings with the SMM Ni4, which we propose as a possible candidate for the experimental observation of the conductance oscillations.

cond-mat.str-el↗

Conductivity and Fano factor in disordered graphene

Using the recursive Green's function method, we study the problem of electron transport in a disordered single-layer graphene sheet. The conductivity is of order $e^2/h$ and its dependence on the carrier density has a scaling form that is controlled solely by the disorder strength and the ratio between the sample size and the correlation length of the disorder potential. The shot noise Fano factor is shown to have a narrow dip near the neutrality point for weak disorder and to develop a nearly doping independent behavior at strong disorder. Our results are in good qualitative and quantitative agreement with experiments and provide a way for extracting microscopic information about the magnitude of extrinsic disorder in graphene.

cond-mat.mes-hall↗

Improving Intrinsic Decoherence in Multi-Quantum-Dot Charge Qubits

We discuss decoherence in charge qubits formed by multiple lateral quantum dots in the framework of the spin-boson model and the Born-Markov approximation. We consider the intrinsic decoherence caused by the coupling to bulk phonon modes. Two distinct quantum dot configurations are studied: (i) Three quantum dots in a ring geometry with one excess electron in total and (ii) arrays of quantum dots where the computational basis states form multipole charge configurations. For the three-dot qubit, we demonstrate the possibility of performing one- and two-qubit operations by solely tuning gate voltages. Compared to the proposal by DiVincenzo {\it et al.} involving a linear three-dot spin qubit, the three-dot charge qubit allows for less overhead on two-qubit operations. For small interdot tunnel amplitudes, the three-dot qubits have $Q$ factors much higher than those obtained for double dot systems. The high-multipole dot configurations also show a substantial decrease in decoherence at low operation frequencies when compared to the double-dot qubit.

cond-mat.mes-hall↗