Searcharxiv⌕ Search

arXiv subjects

Eduardo V. Castro

Publications and source records attributed to Eduardo V. Castro.

At least 73 records · Page 4Linked to original sources

Change of an insulator's topological properties by a Hubbard interaction

We introduce two dimensional fermionic band models with two orbitals per lattice site, or one spinful orbital, and which have a non-zero topological Chern number that can be changed by varying the ratio of hopping parameters. A topologically non-trivial insulator is then realized if there is one fermion per site. When interactions in the framework of the Hubbard model are introduced, the effective hopping parameters are renormalized and the system's topological number can change at a certain interaction strength, $U=\bar U$, smaller than that for the Mott transition. Two different situations may then occur: either the anomalous Hall conductivity $σ_{xy}$ changes abruptly at $\bar U$, as the system undergoes a transition from one topologically non-trivial insulator to another, or the transition is through an anomalous Hall metal, and $σ_{xy}$ changes smoothly between two different quantized values as $U$ grows. Restoring time-reversal symmetry by adding spin to spinless models, the half-filled system becomes a $\mathbb{Z}_2$ topological insulator. The topological number $ν$ then changes at a critical coupling $\bar U$ and the quantized spin Hall response changes abruptly.

cond-mat.str-el↗

Scattering by flexural phonons in suspended graphene under back gate induced strain

We have studied electron scattering by out-of-plane (flexural) phonon modes in doped suspended graphene and its effect on charge transport. In the free-standing case (absence of strain) the flexural branch shows a quadratic dispersion relation, which becomes linear at long wavelength when the sample is under tension due to the rotation symmetry breaking. In the non-strained case, scattering by flexural phonons is the main limitation to electron mobility. This picture changes drastically when strains above $\bar{u}=10^{-4} n(10^{12}\,\text{cm}^{-2})$ are considered. Here we study in particular the case of back gate induced strain, and apply our theoretical findings to recent experiments in suspended graphene.

cond-mat.mtrl-sci↗

Vacancy induced zero energy modes in graphene stacks: The case of ABC trilayer

The zero energy modes induced by vacancies in ABC stacked trilayer graphene are investigated. Depending on the position of the vacancy, a new zero energy solution is realised, different from those obtained in multilayer compounds with Bernal stacking. The electronic modification induced in the sample by the new vacancy states is characterised by computing the local density of states and their localisation properties are studied by the inverse participation ratio. We also analyse the situation in the presence of a gap in the spectrum due to a perpendicular electric field.

cond-mat.mtrl-sci↗

Topological Fermi liquids from Coulomb interactions in the doped Honeycomb lattice

We get an anomalous Hall metallic state in the Honeycomb lattice with nearest neighbors only arising as a spontaneously broken symmetry state from a local nearest neighbor Coulomb interaction V . The key ingredient is to enlarge the unit cell to host six atoms that permits Kekulé distortions and supports self-consistent currents creating non trivial magnetic configurations with total zero flux. We find within a variational mean field approach a metallic phase with broken time reversal symmetry (T) very close in parameter space to a Pomeranchuk instability. Within the T broken region the predominant configuration is an anomalous Hall phase with non zero Hall conductivity, a realization of a topological Fermi liquid. A T broken phase with zero Hall conductivity is stable in a small region of the parameter space for lower values of V .

cond-mat.str-el↗

The role of pressure on the magnetism of bilayer graphene

We study the effect of pressure on the localized magnetic moments induced by vacancies in bilayer graphene in the presence of topological defects breaking the bipartite nature of the lattice. By using a mean-field Hubbard model we address the two inequivalent types of vacancies that appear in the Bernal stacking bilayer graphene. We find that by applying pressure in the direction perpendicular to the layers the critical value of the Hubbard interaction needed to polarize the system decreases. The effect is particularly enhanced for one type of vacancies, and admits straightforward generalization to multilayer graphene in Bernal stacking and graphite. The present results clearly demonstrate that the magnetic behavior of multilayer graphene can be affected by mechanical transverse deformation.

cond-mat.mtrl-sci↗

Temperature dependent resistivity in bilayer graphene due to flexural phonons

We have studied electron scattering by out-of-plane (flexural) phonons in doped suspended bilayer graphene. We have found the bilayer membrane to follow the qualitative behavior of the monolayer cousin. In the bilayer, different electronic structure combine with different electron-phonon coupling to give the same parametric dependence in resistivity, and in particular the same temperature $T$ behavior. In parallel with the single layer, flexural phonons dominate the phonon contribution to resistivity in the absence of strain, where a density independent mobility is obtained. This contribution is strongly suppressed by tension, and in-plane phonons become the dominant contribution in strained samples. Among the quantitative differences an important one has been identified: room $T$ mobility in bilayer graphene is substantially higher than in monolayer. The origin of quantitative differences has been unveiled.

cond-mat.mtrl-sci↗

Quantum quench dynamics and population inversion in bilayer graphene

The gap in bilayer graphene (BLG) can directly be controlled by a perpendicular electric field. By tuning the field through zero at a finite rate in neutral BLG, excited states are produced. Due to screening, the resulting dynamics is determined by coupled non-linear Landau-Zener models. The generated defect density agrees with Kibble-Zurek theory in the presence of subleading logarithmic corrections. After the quench, population inversion occurs for wavevectors close to the Dirac point. This could, at least in principle provide a coherent source of infra-red radiation with tunable spectral properties (frequency and broadening). Cold atoms with quadratic band crossing exhibit the same dynamics.

cond-mat.mes-hall↗

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t'$ (in-plane) and $γ_{4}$ (inter-layer), and the on-site energy $Δ$.

cond-mat.mes-hall↗

Bilayer graphene: gap tunability and edge properties

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe real back gated and/or chemically doped bilayer devices. We show that a gap between zero and midinfrared energies can be induced and externally tuned in these devices, making bilayer graphene very appealing from the point of view of applications. However, applications to nanotechnology require careful treatment of the effect of sample boundaries. This being particularly true in graphene, where the presence of edge states at zero energy -- the Fermi level of the undoped system -- has been extensively reported. Here we show that also bilayer graphene supports surface states localized at zigzag edges. The presence of two layers, however, allows for a new type of edge state which shows an enhanced penetration into the bulk and gives rise to band crossing phenomenon inside the gap of the biased bilayer system.

cond-mat.mes-hall↗

Substitutional disorder and charge localization in manganites

In the manganites $RE_{1-x}AE_{x}$MnO$_{3}$ ($RE$ and $AE$ being rare-earth and alkaline-earth elements, respectively) the random distribution of $RE^{3+}$ and $AE^{2+}$ induces random, but correlated, shifts of site energies of charge carriers in the Mn sites. We consider a realistic model of this diagonal disorder, in addition to the double-exchange hopping disorder, and investigate the metal-insulator transition as a function of temperature, across the paramagnetic-ferromagnetic line, and as a function of doping $x$. Contrary to previous results, we find that values of parameters, estimated from the electronic structure of the manganites, are not incompatible with the possibility of a disorder induced metal to insulator transition accompanying the ferromagnetic to paramagnetic transition at intermediate doping ($x\sim0.2-0.4$). These findings indicate clearly that substitutional disorder has to be considered as an important effect when addressing the colossal magnetoresistance properties of manganites.

cond-mat.str-el↗

A new type of vacancy-induced localized states in multilayer graphene

We demonstrate the existence of a new type of zero energy state associated to vacancies in multilayer graphene that has a finite amplitude over the layer with a vacancy and adjacent layers, and the peculiarity of being quasi-localized in the former and totally delocalized in the adjacent ones. In a bilayer, when a gap is induced in the system by applying a perpendicular electric field, these states become truly localized with a normalizable wavefunction. A transition from a localized to an extended state can be tuned by the external gate for experimentally accessible values of parameters.

cond-mat.mtrl-sci↗

Valley symmetry breaking in bilayer graphene: a test to the minimal model

Physical properties reflecting valley asymmetry of Landau levels in a biased bilayer graphene under magnetic field are discussed. Within the $4-$band continuum model with Hartree-corrected self-consistent gap and finite damping factor we predict the appearance of anomalous steps in quantized Hall conductivity due to the degeneracy lifting of Landau levels. Moreover, the valley symmetry breaking effect appears as a non-semiclassical de Haas-van Alphen effect where the reduction of the oscillation period to half cannot be accounted for through quasi-classical quantization of the orbits in reciprocal space, still valley degenerate.

cond-mat.mes-hall↗

Pinning and switching of magnetic moments in bilayer graphene

We examine the magnetic properties of the localized states induced by lattice vacancies in bilayer graphene with an unrestricted Hartree-Fock calculation. We show that with realistic values of the parameters and for experimentally accessible gate voltages we can have a magnetic switching between an unpolarized and a fully polarized system.

cond-mat.mtrl-sci↗

Localized States at Zigzag Edges of Multilayer Graphene and Graphite Steps

We report the existence of zero energy surface states localized at zigzag edges of $N$-layer graphene. Working within the tight-binding approximation, and using the simplest nearest-neighbor model, we derive the analytic solution for the wavefunctions of these peculiar surface states. It is shown that zero energy edge states in multilayer graphene can be divided into three families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene; (ii) states with finite amplitude over the two last, or the two first layers of the stack, equivalent to surface states in bilayer graphene; (iii) states with finite amplitude over three consecutive layers. Multilayer graphene edge states are shown to be robust to the inclusion of the next nearest-neighbor interlayer hopping. We generalize the edge state solution to the case of graphite steps with zigzag edges, and show that edge states measured through scanning tunneling microscopy and spectroscopy of graphite steps belong to family (i) or (ii) mentioned above, depending on the way the top layer is cut.

cond-mat.mes-hall↗

First order ferromagnetic phase transition in the low electronic density regime of a biased graphene bilayer

The phase diagram of a biased graphene bilayer is computed and the existence of a ferromagnetic phase is discussed both in the critical on-site interaction $U_{c}$ versus doping density and versus temperature. We show that in the ferromagnetic phase the two planes have unequal magnetization and that the electronic density is hole like in one plane and electron like in the other. We give evidence for a \emph{first-order} phase transition between paramagnetic and ferromagnetic phases induced by doping at zero temperature.

cond-mat.str-el↗

Low density ferromagnetism in biased bilayer graphene

We compute the phase diagram of a biased graphene bilayer. The existence of a ferromagnetic phase is discussed with respect both to carrier density and temperature. We find that the ferromagnetic transition is first order, lowering the value of $U$ relatively to the usual Stoner criterion. We show that in the ferromagnetic phase the two planes have unequal magnetization and that the electronic density is hole like in one plane and electron like in the other.

cond-mat.mes-hall↗

Magnetic structure at zigzag edges of graphene bilayer ribbons

We study the edge magnetization of bilayer graphene ribbons with zigzag edges. The presence of flat edge-state bands at the Fermi energy of undoped bilayer, which gives rise to a strong peak in the density of states, makes bilayer ribbons magnetic at the edges even for very small on-site electronic repulsion. Working with the Hubbard model in the Hartree Fock approximation we show that the magnetic structure in bilayer ribbons with zigzag edges is ferromagnetic along the edge, involving sites of the two layers, and antiferromagnetic between opposite edges. It is also shown that this magnetic structure is a consequence of the nature of the edge states present in bilayer ribbons with zigzag edges. Analogously to the monolayer case, edge site magnetization as large as $m \approx0.2 μ_{B}$ (per lattice site) even at small on-site Hubbard repulsion $U \approx 0.3 {eV}$ is realized in nanometer wide bilayer ribbons.

cond-mat.mes-hall↗

Gaped graphene bilayer: disorder and magnetic field effects

Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene bilayer in the presence of disorder, perpendicular magnetic field, and transverse electric field. We show that the gap is rather stable in the presence of diagonal disorder. We compute the cyclotron effective mass in the semi-classical approximation, valid at low magnetic fields. Landau level formation is clearly seen in zigzag and armchair ribbons of the gaped bilayer at intermediate magnetic fields.

cond-mat.mes-hall↗