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Edward T. Croke

Publications and source records attributed to Edward T. Croke.

4 recordsLinked to original sources

A digitally controlled silicon quantum processing unit

Commercially-relevant quantum computers will require large numbers of high-performing qubits that can be manufactured, integrated, and controlled at scale. Silicon exchange-only (EO) qubits are a strong candidate modality due to their control-signal simplicity and compatibility with advanced semiconductor manufacturing, but questions remain around the achievability of sufficiently low noise and a scalable control and wiring solution. Here we introduce a quantum processing unit composed of a custom-designed cryogenic CMOS controller, a novel high-density superconducting ribbon cable, and a low-noise EO qubit device. The quantum chip features a three-rail array of 54 exchange-coupled quantum dots, configurable to host up to 18 EO qubits. We integrate and use these components to demonstrate qubit performance for both single-qubit and entangling operations that advances the EO state of the art by an order of magnitude. We further validate this system by implementing a distance-5 repetition code and a quantum error detecting code then make detailed comparisons with simulations. Our approach facilitates a utility-scale quantum computer with manageable operational and capital requirements.

quant-ph

Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits

We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ($980$ ns) and initialization ($\approx 300$ ns) operations are performed with all-electrical, baseband control. We emphasize a leakage-sensitive joint initialization and measurement metric, developed in the context of exchange-only qubits but applicable more broadly, and report an infidelity of $2.5\pm0.5\times 10^{-3}$. This result is enabled by a high-valley-splitting heterostructure, initialization at the 2-to-3 electron charge boundary, and careful assessment and mitigation of $T_1$ during spin-to-charge conversion. The ultimate fidelity is limited by a number of comparably-important factors, and we identify clear paths towards further improved fidelity and speed. Along with an observed single-qubit randomized benchmarking error rate of $1.7\times 10^{-3}$, this work demonstrates initialization, control, and measurement of Si/SiGe triple-dot qubits at fidelities and durations which are promising for scalable quantum information processing.

quant-ph

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.

cond-mat.mes-hall

Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings in these two devices were 120 and 270 μeV, suggesting the presence of atomically sharp interfaces in our heterostructures.

cond-mat.mes-hall