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Efe Ersoy

Publications and source records attributed to Efe Ersoy.

3 recordsLinked to original sources

Laser-written reconfigurable energy landscapes and programmable Moir\'e spin textures

Magnetic textures are central to emerging spintronic and unconventional computing technologies due to their rich dynamics, topological properties and nanoscale dimensions. A major challenge remains achieving tunable, reversible, and spatially resolved control over these textures and their evolution as a function of external stimuli, by spatially reprogramming the magnetic energy landscape that governs their nucleation and stability. Here, we exploit a focused laser-assisted local field cooling technique that establishes a fast, non-contact and scalable platform for grayscale spin texture engineering. By non-destructively controlling the exchange-bias anisotropy with nanoscale resolution in thin-film heterostructures, this approach enables grayscale, reprogrammable control of the local energy profile, which we use to create magnetic patterns with highly controlled hysteresis, field-dependent readability and tunable switching thresholds. Leveraging this capability, we demonstrate information encoding with magnetic field-gated readability, and artificial spin metamaterials, stabilizing spin lattices with field-reconfigurable symmetries and creating artificial Moir\'e spin textures via the geometric superposition of twisted magnetic potentials. These results establish a versatile, reprogrammable platform that bridges the gap between application-oriented magnetic memory and fundamental studies of emergent order in artificial lattices.

cond-mat.mtrl-sci

Spin-valley 0.7 anomaly in bilayer graphene/WSe$_2$ quantum point contacts

We report a well-resolved 0.7 conductance anomaly at $G = 0.7\times(2e^2/h)$ in bilayer graphene/WSe$_2$ quantum point contacts. Proximity-enhanced spin-orbit coupling splits the four-fold ground state of bilayer graphene into well-separated spin-valley locked Kramers doublets. The anomaly emerges between these opposite spin-valley states. Despite fundamentally different band structure and wavefunction characteristics, the temperature and bias phenomenology closely mirror GaAs systems. In contrast, the parallel magnetic field response differs significantly, confirming the central role of valley degrees of freedom. This opens new pathways to study valley-exchange correlation physics in regimes inaccessible to conventional semiconductors.

cond-mat.mes-hall

Tunable spin-orbit splitting in bilayer graphene/WSe$_2$ quantum devices

Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies, such as quantum computing and spintronics. However, their intrinsically weak spin-orbit coupling (SOC) complicates spin and valley manipulation. Integrating BLG with transition metal dichalcogenides (TMDs) enhances the SOC via proximity effects. While this enhancement has been demonstrated in 2D-layered structures, 1D and 0D nanostructures in BLG/TMD remain unrealized, with open questions regarding SOC strength and tunability. Here, we investigate quantum point contacts and quantum dots in two BLG/WSe$_2$ heterostructures with different stacking orders. Across multiple devices, we reproducibly demonstrate spin-orbit splitting up to 1.5 meV - more than 1 order of magnitude higher than in pristine BLG. Furthermore, we show that the induced SOC can be tuned in situ from its maximum value to near-complete suppression via the perpendicular electric field. This enhancement and in situ tunability establish the SOC as a control mechanism for dynamic spin and valley manipulation.

cond-mat.mes-hall