arXiv subjects

Efthimios Kaxiras

Publications and source records attributed to Efthimios Kaxiras.

At least 19 recordsLinked to original sources

arXiv2026

Negative quantum friction in nanoscale water flows: the Wigner picture

We explore the phenomenon of "quantum" friction based on a single-particle model patterned after the Wigner equation describing electrons flow in a solid wall confining nanoscale water flows. The numerical simulations show a clear signature of negative quantum friction, namely a net momentum transfer from the electrons in the solid wall to the flowing water molecules. Such net momentum transfer results into a sizeable reduction of the water friction, up to forty percent, depending on the strength of the coupling between classical and quantum fluctuations. Our results offer the prospect of a theoretical framework bridging classical and quantum description by using continuum kinetic theories and particle-based simulations.

cond-mat.mes-hall↗

arXiv2026

Twisted bilayer graphene from first-principles: structural and electronic properties

We present a comprehensive first-principles study of twisted bilayer graphene (tBLG) for a wide range of twist angles, with a focus on structural and electronic properties. By employing density functional theory (DFT) with an optimized local basis set, we simulate tBLG, obtaining fully relaxed commensurate structures for twist angles down to 0.987°. For all angles the lattice relaxation agrees well with continuum elastic models. For angles accessible to plane-wave DFT (VASP), we provide a detailed comparison with our local basis DFT (SIESTA) calculations, demonstrating excellent agreement in both the atomic and electronic structure. The dependence of the Fermi velocity and band width on the twist angle shows qualitative agreement with results from an `exact' $\mathbf{k \cdot p}$ continuum model, but reveals a small twist angle offset. Additionally, we provide details of the low-energy wavefunction character, band inversion and symmetries. Our results provide an ab initio reference point for the microscopic structure and electronic properties of tBLG which will serve as the foundation for future studies incorporating many-body effects.

cond-mat.mes-hall↗

arXiv2026

Probing the Penetration Depth of Topological Surface States by Magnetic Impurity Scattering in V-doped Sb$_2$Te$_3$

Topological insulators host Dirac surface states (SS) protected by time-reversal symmetry. Inter-surface hybridization can gap the SS and give rise to the quantum spin Hall effect in films that are sufficiently thin compared to the SS penetration depth. However, quantifying the SS penetration depth typically requires painstaking synthesis of multiple films with varying thickness. Here we introduce a direct method to probe the SS penetration depth in bulk crystals, by studying the interplay between SS and magnetic impurities in \SVT. Using scanning tunneling microscopy and spectroscopy, we find that even sparse magnetic impurities ($\lesssim0.25\%$ vanadium) can gap the Dirac SS. However, a single V impurity induces only localized states, and does not form an impurity band, so the gapped Dirac dispersion is preserved away from the impurity. In high magnetic fields, we observe an energy shift of the $0^\text{th}$ Landau level and a suppression of quasiparticle lifetime at the Dirac point, indicating \newtext{magnetic} scattering of the SS. Crucially, by employing V impurities at different depths as precise scattering probes, we reveal the SS penetration depth on the sub-nanometer scale in a bulk crystal.

cond-mat.mes-hall↗

arXiv2026

Wavefunction textures in twisted bilayer graphene from first principles

Motivated by recent experiments probing the wavefunctions of magic-angle twisted bilayer graphene (tBLG), we perform large-scale first-principles calculations of tBLG with full atomic relaxation across a wide range of twist angles down to $0.99^\circ$. Focusing on the magic angle, we compute wavefunctions of the low energy bands, resolving atomic-scale details and moiré-scale patterns that form triangular, honeycomb, and Kagome lattices. By tuning the interlayer interactions, we illustrate the formation of the flat bands from isolated monolayers and the emergence of the band inversion and fragile topology at a sufficiently large interaction strength. We identify strong indicators of a new phase transition with increasing interlayer interaction strength, achievable with external pressure or a decrease in the twist angle. When this transition occurs, the upper and lower flat bands exchange their wavefunction character and symmetry eigenvalues, which may be correlated with the appearance of superconductivity with electron doping below the magic angle. Our study demonstrates the feasibility of using first-principles wavefunctions to help interpret experimental signatures of topological and correlated phases in tBLG.

cond-mat.mes-hall↗

arXiv2025

Switching topological states via uniaxial strain in 2D materials

In topological materials, dissipationless edge currents are protected against local defect scattering by the bulk inverted band structure and band gap. We propose that large uniaxial strain can effectively switch a 2D Chern insulator to a topologically trivial state. Further, we suggest that the boundary between strained and unstrained regions of a sample can act as a new edge for dissipationless current flow. Using density functional theory (DFT) calculations we demonstrate the strain-tunability of the monolayer MnBi2S2T2 band structure and the switching of the Chern number. We combine uniaxial and biaxial strain results to map out the strain-tuned topological phase diagram.

cond-mat.str-el↗

arXiv2025

Universal Symmetries in Twisted Moiré Materials

Two-dimensional multi-layer materials with an induced moiré pattern, either due to strain or relative twist between layers, provide a versatile platform for exploring strongly correlated and topological electronic phenomena. While these systems offer unprecedented tunability, their theoretical description remains challenging due to their complex atomic structures and large unit cells. A notable example is twisted bilayer graphene, where even the relevant symmetry group remains unsettled despite its critical role in constructing effective theories. Here, we focus on twisted bilayer graphene and use a combination of analytical methods, molecular dynamics simulations, and first-principles calculations to show that twisted atomic configurations with distinct microscopic symmetries converge to a universal interlayer structure that governs the low-energy physics. This emergent universality provides a robust foundation for symmetry-respecting models and offers insight into the role of commensurability in real twisted moiré systems.

cond-mat.str-el↗

arXiv2025

Alkali Intercalation of Moire Heterostructures for Low-Loss Plasmonics

Two-dimensional metals generically support gapless plasmons with wavelengths well below the wavelength of free-space radiation at the same frequency. Typically, however, this substantial confinement of electromagnetic energy is associated with commensurately high losses, and mitigating such losses may only be achieved through judicious band structure engineering near the Fermi level. In a clean system, an isolated, moderately flat, band at the Fermi level with sufficiently high carrier density can support a plasmon that is immune to propagation losses up to some order in the electron-phonon interaction. However, proposed materials that satisfy these criteria have been ferromagnetic, structurally unstable, or otherwise difficult to fabricate. Here, we propose a class of band structure engineered materials that evade these typical pitfalls -- Moire heterostructures of hexagonal boron nitride intercalated with alkali atoms. We find that only sodium atoms engender a sufficiently isolated band with plasmons lossless at first order in the electron-phonon interaction. We calculate higher order electron-phonon losses and find that at frequencies of about $1$eV the electron-phonon decay mechanism is negligible -- leading to a contribution to the decay rate of about 10^7 Hz in a small frequency range. We next calculate losses from the electron-electron interaction and find that this is the dominant process -- leading plasmons to decay to lower frequency plasmons at a rate of around 10^14 Hz.

cond-mat.mtrl-sci↗

arXiv2025

Tunable atomically enhanced moiré Berry curvatures in twisted triple bilayer graphene

We report a twisted triple bilayer graphene platform consisting of three units of Bernal bilayer graphene consecutively twisted at 1.49° and 1.68°. We demonstrate the atomic reconstruction between the two competing moiré superlattices strongly enhances the Berry curvature of each moiré band insulator state, characterized by measured strong nonlocal valley Hall effect that sensitively depends on the inter-moiré competition strength, tunable by manipulating the out-of-plane carrier distribution. Our study sheds light on the microscopic mechanism of atomic and electronic reconstruction in twisted multilayer systems, by systematically investigating transport signatures of moiré Berry curvature and its enhancement from moiré-of-moiré lattice reconstruction. We show that the reconstructed electronic band can be versatilely tuned by electrostatics, providing an approach toward engineering the band structure and its topology for a quantum material platform with designer electrical and optical properties.

cond-mat.mes-hall↗

arXiv2025

Stacking-dependent electronic structure of ultrathin perovskite bilayers

Twistronics has received much attention as a new method to manipulate the properties of 2D van der Waals structures by introducing moiré patterns through a relative rotation between two layers. Here we begin a theoretical exploration of twistronics beyond the realm of van der Waals materials by developing a first-principles description of the electronic structure and interlayer interactions of ultrathin perovskite bilayers. We construct both an ab initio tight-binding model as well as a minimal 3-band effective model for the valence bands of monolayers and bilayers of oxides derived from the Ruddlesden-Popper phase of perovskites, which is amenable to thin-layer formation. We illustrate the approach with the specific example of Sr$_2$TiO$_4$ layers but also provide model parameters for Ca$_2$TiO$_4$ and Ba$_2$TiO$_4$ .

cond-mat.mtrl-sci↗

arXiv2025

Stacking-engineered ferroelectricity and multiferroic order in van der Waals magnets

Two-dimensional (2D) materials that exhibit spontaneous magnetization, polarization or strain (referred to as ferroics) have the potential to revolutionize nanotechnology by enhancing the multifunctionality of nanoscale devices. However, multiferroic order is difficult to achieve, requiring complicated coupling between electron and spin degrees of freedom. We propose a universal method to engineer multiferroics from van der Waals magnets by taking advantage of the fact that changing the stacking between 2D layers can break inversion symmetry, resulting in ferroelectricity and possibly magnetoelectric coupling. We illustrate this concept using first-principles calculations in bilayer NiI$_2$, which can be made ferroelectric upon rotating two adjacent layers by $180^{\circ}$ with respect to the bulk stacking. Furthermore, we discover a novel multiferroic order induced by interlayer charge transfer which couples the interlayer spin order and electronic polarization. Our approach is not only general but also systematic, and can enable the discovery of a wide variety of 2D multiferroics.

cond-mat.mtrl-sci↗

arXiv2024

Accurate and efficient localized basis sets for two-dimensional materials

First-principles density functional theory (DFT) codes which employ a localized basis offer advantages over those which use plane-wave bases, such as better scaling with system size and better suitability to low-dimensional systems. The trade-off is that care must be taken in order to generate a good localized basis set which is efficient and accurate in a variety of environments. Here we develop and make freely available optimized local basis sets for two common two-dimensional (2D) materials, graphene and hexagonal boron nitride, for the \siesta DFT code. Each basis set is benchmarked against the \abinit plane-wave code, using the same pseudopotentials and exchange-correlation functionals. We find that a significant improvement is obtained by including the $l+2$ polarization orbitals ($4f$) to the basis set, which greatly improves angular flexibility. The optimized basis sets yield much better agreement with plane-wave calculations for key features of the physical system, including total energy, lattice constant and cohesive energy. The optimized basis sets also result in a speedup of the calculations with respect to the non-optimized, native choices.

cond-mat.mtrl-sci↗

arXiv2024

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their applicability. Here, we investigate workfunction-mediated charge transfer (modulation doping) as a pathway for achieving high-performance p-type 2D transistors. Focusing on type-III band alignment, we explore the doping capabilities of 27 candidate materials, including transition metal oxides, oxyhalides, and α-RuCl3, on channel materials such as transition metal dichalcogenides (TMDs) and group-III nitrides. Our extensive first-principles density functional theory (DFT) reveal p-type doping capabilities of high electron affinity materials, including α-RuCl3, MoO3, and V2O5. We predict significant reductions in contact resistance and enhanced channel mobility through efficient hole transfer without introducing detrimental defects. We analyze transistor geometries and identify promising material combinations beyond the current focus on WSe2 doping, suggesting new avenues for hBN, AlN, GaN, and MoS2. This comprehensive investigation provides a roadmap for developing high-performance p-type monolayer transistors toward the realization of 2D electronics.

cond-mat.mtrl-sci↗

arXiv2024

Plasmonic polarization sensing of electrostatic superlattice potentials

Plasmon polaritons are formed by coupling light with delocalized electrons. The half-light and half-matter nature of plasmon polaritons endows them with unparalleled tunability via a range of parameters, such as dielectric environments and carrier density. Therefore, plasmon polaritons are expected to be tuned when in proximity to polar materials since the carrier density is tuned by an electrostatic potential; conversely, the plasmon polariton response might enable the sensing of polarization. Here, we use infrared nano-imaging and nano-photocurrent measurements to investigate heterostructures composed of graphene and twisted hexagonal boron nitride (t-BN), with alternating polarization in a triangular network of moiré stacking domains. We observe that the carrier density and the corresponding plasmonic response of graphene are modulated by polar domains in t-BN. In addition, we demonstrate that the nanometer-wide domain walls of graphene moirés superlattices, created by the polar domains of t-BN, provide momenta to assist the plasmonic excitations. Furthermore, our studies establish that the plasmon of graphene could function as a delicate sensor for polarization textures. The evolution of polarization textures in t-BN under uniform electric fields is tomographically examined via plasmonic imaging. Strikingly, no noticeable polarization switching is observed under applied electric fields up to 0.23 V/nm, at variance with transport reports. Our nano-images unambiguously reveal that t-BN with triangular domains acts like a ferrielectric, rather than ferroelectric claimed by many previous studies.

cond-mat.mes-hall↗

arXiv2024

One-dimensional magnetic conduction channels across zigzag graphene nanoribbon/hexagonal boron nitride heterojunctions

We examine the electronic structure of recently fabricated in-plane heterojunctions of zigzag graphene nanoribbons embedded in hexagonal boron nitride. We focus on hitherto unexplored interface configurations in which both edges of the nanoribbon are bonded to the same chemical species, either boron or nitrogen atoms. Using ab initio and mean-field Hubbard model calculations, we reveal the emergence of one-dimensional magnetic conducting channels at these interfaces. These channels originate from the energy shift of the magnetic interface states that is induced by charge transfer between the nanoribbon and hexagonal boron nitride. We further address the response of these heterojunctions to external electric and magnetic fields, demonstrating the tunability of energy and spin splittings in the electronic structure. Our findings establish that zigzag graphene nanoribbon/hexagonal boron nitride heterojunctions are a suitable platform for exploring and engineering spin transport in the atomically thin limit, with potential applications in integrated spintronic devices

cond-mat.mes-hall↗

arXiv2024

2D Nitride Ordered Alloys: A Novel Class of Ultra-Wide Bandgap Semiconductors

Ultra-wide bandgap (UWBG) semiconductors are poised to transform power electronics by surpassing the capabilities of established wide bandgap materials, such as GaN and SiC, owing to their capability to operate at higher voltage, frequency, and temperature ranges. While bulk group-III nitrides and their alloys have been extensively studied in the UWBG realm, their two-dimensional counterparts remain unexplored. Here, we examine the stability and electronic properties of monolayers of ordered boron-based group-III nitride alloys with general formula BxM1-xN, where M = Al, Ga. On the basis of ab initio calculations we identify a number of energetically and dynamically stable structures. Instrumental to their stability is a previously overlooked out-of-plane displacement (puckering) of atoms, which induces a polar ordering and antiferroelectric ground state. Our findings reveal the energy barrier between metastable ferroelectric states is lowered by successive switching of out-of-plane displacements through an antiferroelectric state.

cond-mat.mtrl-sci↗

arXiv2024

Band structure engineering using a moiré polar substrate

Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top. As a proof of concept, we use Bernal bilayer graphene as the target material. The resulting modulation of the band structure appears as superlattice resistance peaks, tunable by varying the twist angle, and Hofstadter butterfly physics under a magnetic field. Additionally, we demonstrate the tunability of the moiré potential by altering the dielectric thickness underneath the twisted BN. Finally, we find that near-60°-twisted bilayer BN provides a unique platform for studying the moiré structural effect without the contribution from electrostatic moiré potentials. Tunable moiré polar substrates may serve as versatile platforms to engineer the electronic, optical, and mechanical properties of 2D materials and van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2024

Twisted bilayer graphene revisited: minimal two-band model for low-energy bands

An accurate description of the low-energy electronic bands in twisted bilayer graphene (tBLG) is of great interest due to their relation to correlated electron phases, such as superconductivity and Mott-insulator behavior at half-filling. The paradigmatic model of Bistritzer and MacDonald [PNAS 108, 12233 (2011)], based on the moiré pattern formed by tBLG, predicts the existence of "magic angles" at which the Fermi velocity of the low-energy bands goes to zero, and the bands themselves become dispersionless. Here, we reexamine the low-energy bands of tBLG from the ab initio electronic structure perspective, motivated by features related to the atomic relaxation in the moiré pattern, namely circular regions of AA stacking, triangular regions of AB/BA stacking and domain walls separating the latter. We find that the bands are never perfectly flat and the Fermi velocity never vanishes, but rather a "magic range" exists where the lower band becomes extremely flat and the Fermi velocity attains a non-zero minimum value. We propose a simple $(2+2)$-band model, comprised of two different pairs of orbitals, both on a honeycomb lattice: the first pair represents the low-energy bands with high localization at the AA sites, while the second pair represents highly dispersive bands associated with domain-wall states. This model gives an accurate description of the low-energy bands with few (13) parameters which are physically motivated and vary smoothly in the magic range. In addition, we derive an effective two-band hamiltonian which also gives an accurate description of the low-energy bands. This minimal two-band model affords a connection to a Hubbard-like description of the occupancy of sub-bands and can be used a basis for exploring correlated states.

cond-mat.mes-hall↗

arXiv2024

Electron Collimation in Twisted Bilayer Graphene via Gate-defined Moiré Barriers

Electron collimation via a graphene pn-junction allows electrostatic control of ballistic electron trajectories akin to that of an optical circuit. Similar manipulation of novel correlated electronic phases in twisted-bilayer graphene (tBLG) can provide additional probes to the underlying physics and device components towards advanced quantum electronics. In this work, we demonstrate collimation of the electron flow via gate-defined moiré barriers in a tBLG device, utilizing the band-insulator gap of the moiré superlattice. A single junction can be tuned to host a chosen combination of conventional pseudo barrier and moiré tunnel barriers, from which we demonstrate improved collimation efficiency. By measuring transport through two consecutive moiré collimators separated by 1 um, we demonstrate evidence of electron collimation in tBLG in the presence of realistic twist-angle inhomogeneity.

cond-mat.mes-hall↗