arXiv subjects

Efthimios Kaxiras

Publications and source records attributed to Efthimios Kaxiras.

177 records · Page 10Linked to original sources

arXiv1999

A Critical Reexamination of the Peierls-Nabarro Model

We reexamine two essential issues within the Peierls-Nabarro model which are critical in obtaining accurate values for the Peierls stress. The first issue is related to the sampling scheme of the misfit energy across the glide plane and the second one is the effect of relaxation on the Peierls stress. It is shown that most of the current applications of the Peierls-Nabarro model do not treat properly the two issues and therefore are not able to predict reliable values for the Peierls stress. We argue that the double counting scheme for the misfit energy at both sides of the glide plane is physically more reasonable, and it can predict more accurate values for the Peierls stress, especially for dislocations with equal spacing between alternating atomic rows. We also show the importance for allowing atomic relaxation when a dislocation traverses the Peierls barrier, which in turn lowers the Peierls stress for narrow dislocations by an order of magnitude.

cond-mat.mtrl-sci↗

arXiv1999

Generalized stacking fault energy surfaces and dislocation properties of aluminum

We have employed the semidiscrete variational generalized Peierls-Nabarro model to study the dislocation core properties of aluminum. The generalized stacking fault energy surfaces entering the model are calculated by using first-principles Density Functional Theory (DFT) with pseudopotentials and the embedded atom method (EAM). Various core properties, including the core width, splitting behavior, energetics and Peierls stress for different dislocations have been investigated. The correlation between the core energetics and dislocation character has been explored. Our results reveal a simple relationship between the Peierls stress and the ratio between the core width and atomic spacing. The dependence of the core properties on the two methods for calculating the total energy (DFT vs. EAM) has been examined. The EAM can give gross trends for various dislocation properties but fails to predict the finer core structures, which in turn can affect the Peierls stress significantly (about one order of magnitude).

cond-mat.mtrl-sci↗

arXiv1999

The surfactant effect in semiconductor thin film growth

The theoretical and experimental status of surfactant mediated semiconductor epitaxial growth is reviewed. We discuss homoepitaxy as well as heteroepitaxy, and emphasize in particular issues related to the mechanism by which surfactants suppress growth of three dimensional islands in heteroepitaxy. We argue that the dominant mechanism is passivation of island edges, which leads to suppression of attachment and detachment of atoms to and from island edges.

cond-mat.mtrl-sci↗

arXiv1998

Finite temperature molecular dynamics study of unstable stacking fault free energies in silicon

We calculate the free energies of unstable stacking fault (USF) configurations on the glide and shuffle slip planes in silicon as a function of temperature, using the recently developed Environment Dependent Interatomic Potential (EDIP). We employ the molecular dynamics (MD) adiabatic switching method with appropriate periodic boundary conditions and restrictions to atomic motion that guarantee stability and include volume relaxation of the USF configurations perpendicular to the slip plane. Our MD results using the EDIP model agree fairly well with earlier first-principles estimates for the transition from shuffle to glide plane dominance as a function of temperature. We use these results to make contact to brittle-ductile transition models.

cond-mat.mtrl-sci↗

arXiv1997

Interatomic Potential for Silicon Defects and Disordered Phases

We develop an empirical potential for silicon which represents a considerable improvement over existing models in describing local bonding for bulk defects and disordered phases. The model consists of two- and three-body interactions with theoretically motivated functional forms that capture chemical and physical trends as explained in a companion paper. The numerical parameters in the functional form are obtained by fitting to a set of ab initio results from quantum mechanical calculations based on density functional theory in the local density approximation, which include various bulk phases and defect structures. We test the potential by applying it to the relaxation of point defects, core properties of partial dislocations and the structure of disordered phases, none of which are included in the fitting procedure. For dislocations, our model makes predictions in excellent agreement with ab initio and tight-binding calculations. It is the only potential known to describe both the 30$^\circ$- and 90$^\circ$-partial dislocations in the glide set {111}. The structural and thermodynamic properties of the liquid and amorphous phases are also in good agreement with experimental and ab initio results. Our potential is the first capable of simulating a quench directly from the liquid to the amorphous phase, and the resulting amorphous structure is more realistic than with existing empirical preparation methods. These advances in transferability come with no extra computational cost, since force evaluation with our model is faster than with the popular potential of Stillinger-Weber, thus allowing reliable atomistic simulations of very large atomic systems.

cond-mat.mtrl-sci↗

arXiv1997

Surface reconstruction induced geometries of Si clusters

We discuss a generalization of the surface reconstruction arguments for the structure of intermediate size Si clusters, which leads to model geometries for the sizes 33, 39 (two isomers), 45 (two isomers), 49 (two isomers), 57 and 61 (two isomers). The common feature in all these models is a structure that closely resembles the most stable reconstruction of Si surfaces, surrounding a core of bulk-like tetrahedrally bonded atoms. We investigate the energetics and the electronic structure of these models through first-principles density functional theory calculations. These models may be useful in understanding experimental results on the reactivity of Si clusters and their shape as inferred from mobility measurements.

cond-mat.mtrl-sci↗

arXiv1997

Environment Dependent Interatomic Potential for Bulk Silicon

We use recent theoretical advances to develop a new functional form for interatomic forces in bulk silicon. The theoretical results underlying the model include a novel analysis of elastic properties for the diamond and graphitic structures and inversions of ab initio cohesive energy curves. The interaction model includes two-body and three-body terms which depend on the local atomic environment through an effective coordination number. This formulation is able to capture successfully: (i) the energetics and elastic properties of the ground state diamond lattice; (ii) the covalent re-hybridization of undercoordinated atoms; (iii) and a smooth transition to metallic bonding for overcoordinated atoms. Because the essential features of chemical bonding in the bulk are built into the functional form, this model promises to be useful for describing interatomic forces in silicon bulk phases and defects. Although this functional form is remarkably realistic by usual standards, it contains a small number of fitting parameters and requires computational effort comparable to the most efficient existing models. In a companion paper, a complete parameterization of the model is given, and excellent performance for condensed phases and bulk defects is demonstrated.

cond-mat.mtrl-sci↗

arXiv1996

Modeling of Covalent Bonding in Solids by Inversion of Cohesive Energy Curves

We provide a systematic test of empirical theories of covalent bonding in solids using an exact procedure to invert ab initio cohesive energy curves. By considering multiple structures of the same material, it is possible for the first time to test competing angular functions, expose inconsistencies in the basic assumption of a cluster expansion, and extract general features of covalent bonding. We test our methods on silicon, and provide the direct evidence that the Tersoff-type bond order formalism correctly describes coordination dependence. For bond-bending forces, we obtain skewed angular functions that favor small angles, unlike existing models. As a proof-of-principle demonstration, we derive a Si interatomic potential which exhibits comparable accuracy to existing models.

mtrl-th↗

arXiv1996

Generalized Stacking Fault Energy Surfaces and Dislocation Properties of Silicon: A First-Principles Theoretical Study

The generalized stacking fault (GSF) energy surfaces have received considerable attention due to their close relation to the mechanical properties of solids. We present a detailed study of the GSF energy surfaces of silicon within the framework of density functional theory. We have calculated the GSF energy surfaces for the shuffle and glide set of the (111) plane, and that of the (100) plane of silicon, paying particular attention to the effects of the relaxation of atomic coordinates. Based on the calculated GSF energy surfaces and the Peierls-Nabarro model, we obtain estimates for the dislocation profiles, core energies, Peierls energies, and the corresponding stresses for various planar dislocations of silicon.

mtrl-th↗

arXiv1996

Slip energy barriers in aluminum and implications for ductile versus brittle behavior

We conisder the brittle versus ductile behavior of aluminum in the framework of the Peierls-model analysis of dislocation emission from a crack tip. To this end, we perform first-principles quantum mechanical calculations for the unstable stacking energy $γ_{us}$ of aluminum along the Shockley partial slip route. Our calculations are based on density functional theory and the local density approximation and include full atomic and volume relaxation. We find that in aluminum $γ_{us} = 0.224$ J/m$^2$. Within the Peierls-model analysis, this value would predict a brittle solid which poses an interesting problem since aluminum is typically considered ductile. The resolution may be given by one of three possibilites: (a) Aluminum is indeed brittle at zero temperature, and becomes ductile at a finite temperature due to motion of pre-existing dislocations which relax the stress concentration at the crack tip. (b) Dislocation emission at the crack tip is itself a thermally activated process. (c) Aluminum is actually ductile at all temperatures and the theoretical model employed needs to be significantly improved in order to resolve the apparent contradiction.

mtrl-th↗

arXiv1995

Variational Hilbert space truncation approach to quantum Heisenberg antiferromagnets on frustrated clusters

We study the spin-$\frac{1}{2}$ Heisenberg antiferromagnet on a series of finite-size clusters with features inspired by the fullerenes. Frustration due to the presence of pentagonal rings makes such structures challenging in the context of quantum Monte-Carlo methods. We use an exact diagonalization approach combined with a truncation method in which only the most important basis states of the Hilbert space are retained. We describe an efficient variational method for finding an optimal truncation of a given size which minimizes the error in the ground state energy. Ground state energies and spin-spin correlations are obtained for clusters with up to thirty-two sites without the need to restrict the symmetry of the structures. The results are compared to full-space calculations and to unfrustrated structures based on the honeycomb lattice.

cond-mat↗

arXiv1995

Adaptive coordinate, real-space electronic structure calculations on parallel computers

We present a method for electronic structure calculations that retains all of the advantages of real space and addresses the inherent inefficiency of a regular grid, which has equal precision everywhere. The computations are carried out on a {\em regular} mesh in {\em curvilinear space}, which allows natural and efficient decomposition on parallel computers, and effective use of iterative numerical methods. A novel feature is the use of error analysis to optimize the curvilinear grid for highly inhomogeneous electronic distributions. We report accurate all-electron calculations for H$_2$, O, and O$_{2}$.

cond-mat↗

arXiv1995

Atomistic Aspects of Diffusion and Growth on the Si and Ge (111) Surfaces

The stability of interfaces and the mechanisms of thin film growth on semiconductors are issues of central importance in electronic devices. These issues can only be understood through detailed study of the relevant microscopic processes. Experimental studies are able to provide detailed, atomic scale information for model systems. Theoretical analysis of experimental results is essential in explaining certain surprising observations and in providing guidance for optimizing conditions and methods of growth. We review recent theoretical work on the diffusion of adatoms, the structure of adsorbate monolayers, and their implications for growth on the Si and Ge (111) surfaces. The theoretical analysis consists of first-principles calculations of the total-energy and entropy factors for stable, metastable and saddle-point configurations. These calculations are supplemented by Monte Carlo simulations of simple models that afford direct contact with experimental observations.

mtrl-th↗

arXiv1995

Use of the Generalized Gradient Approximation in Pseudopotential Calculations of Solids

We present a study of the equilibrium properties of $sp$-bonded solids within the pseudopotential approach, employing recently proposed generalized gradient approximation (GGA) exchange correlation functionals. We analyze the effects of the gradient corrections on the behavior of the pseudopotentials and discuss possible approaches for constructing pseudopotentials self-consistently in the context of gradient corrected functionals. The calculated equilibrium properties of solids using the GGA functionals are compared to the ones obtained through the local density approximation (LDA) and to experimental data. A significant improvement over the LDA results is achieved with the use of the GGA functionals for cohesive energies. For the lattice constant, the same accuracy as in LDA can be obtained when the nonlinear coupling between core and valence electrons introduced by the exchange correlation functionals is properly taken into account. However, GGA functionals give bulk moduli that are too small compared to experiment.

cond-mat↗

arXiv1995

Theoretical Study of Cubic Structures Based on Fullerene Carbon Clusters: C$_{28}$C and (C$_{28})_{2}$

We study a new hypothetical form of solid carbon \csc, with a unit cell which is composed of the \cs \ fullerene cluster and an additional single carbon atom arranged in the zincblende structure. Using {\it ab initio} calculations, we show that this new form of solid carbon has lower energy than hyperdiamond, the recently proposed form composed of \cs \ units in the diamond structure. To understand the bonding character of of these cluster-based solids, we analyze the electronic structure of \csc \ and of hyperdiamond and compare them to the electronic states of crystalline cubic diamond.

cond-mat↗