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Efthimios Kaxiras

Publications and source records attributed to Efthimios Kaxiras.

At least 127 records · Page 7Linked to original sources

Properties of In-Plane Graphene/MoS2 Heterojunctions

The graphene/MoS2 heterojunction formed by joining the two components laterally in a single plane promises to exhibit a low-resistance contact according to the Schottky-Mott rule. Here we provide an atomic-scale description of the structural, electronic, and magnetic properties of this type of junction. We first identify the energetically favorable structures in which the preference of forming C-S or C-Mo bonds at the boundary depends on the chemical conditions. We find that significant charge transfer between graphene and MoS2 is localized at the boundary. We show that the abundant 1D boundary states substantially pin the Fermi level in the lateral contact between graphene and MoS2, in close analogy to the effect of 2D interfacial states in the contacts between 3D materials. Furthermore, we propose specific ways in which these effects can be exploited to achieve spin-polarized currents.

cond-mat.mtrl-sci↗

Graphene and active metamaterials: theoretical methods and physical properties

The interaction of light with matter has triggered the interest of scientists for long time. The area of plasmonics emerges in this context through the interaction of light with valence electrons in metals. The random phase approximation in the long wavelength limit is used for analytical investigation of plasmons in three-dimensional metals, in a two-dimensional electron gas and finally in the most famous two-dimensional semi-metal, namely graphene. We show that plasmons in bulk metals as well as in a two-dimensional electron gas originate from classical laws, whereas, quantum effects appear as non-local corrections. On the other hand, graphene plasmons are purely quantum modes and, thus, they would not exist in a "classical world". Furthermore, under certain circumstances, light is able to couple with plasmons on metallic surfaces, forming a surface plasmon polariton, which is very important in nanoplasmonics due to its subwavelength nature. In addition, we outline two applications that complete our theoretical investigation. Firstly, we examine how the presence of gain (active) dielectrics affects surface plasmon polariton properties and we find that there is a gain value for which the metallic losses are completely eliminated resulting to lossless plasmon propagation. Secondly, we combine monolayers of graphene in a periodic order and construct a plasmonic metamaterial that provides tunable wave propagation properties, such as epsilon-near-zero behavior, normal and negative refraction.

physics.optics↗

Accurate formation energies of charged defects in solids: a systematic approach

Defects on surfaces of semiconductors have a strong effect on their reactivity and catalytic properties. The concentration of different charge states of defects is determined by their formation energies. First-principles calculations are an important tool for computing defect formation energies and for studying the microscopic environment of the defect. The main problem associated with the widely used supercell method in these calculations is the error in the electrostatic energy, which is especially pronounced in calculations that involve surface slabs and 2D materials. We present an internally consistent approach for calculating defect formation energies in inhomogeneous and anisotropic dielectric environments, and demonstrate its applicability to the cases of the positively charged Cl vacancy on the NaCl (100) surface and the negatively charged S vacancy in monolayer MoS2.

cond-mat.mes-hall↗

Electric Field Tuning of Band Offsets in Transition Metal Dichalcogenides

We use first-principles calculations to investigate the band structure evolution of W$X_2$/Mo$X_2$ ($X$ = S, Se) heterobilayers under a perpendicular electric field. We characterize the extent to which the type-II band alignment in these compounds can be tuned or inverted electrostatically. Our results demonstrate two effects of stacking configuration. First, different stackings produce different net dipole moments, resulting in band offset variations that are larger than 0.1 eV. Second, based on symmetry constraints that depend on stacking, a perpendicular electric field may hybridize W$X_2$ and Mo$X_2$ bands that cross at the Brillouin Zone corner $K$. Our results suggest that external electric fields can be used to tune the physics of intralayer and interlayer excitons in heterobilayers of transition metal dichalcogenides.

cond-mat.mes-hall↗

Stability of metallic edges and Fermi-level pinning in transition-metal dichalcogenide nanoribbons

Nanoribbons of MoS$_2$ present a unique electronic structure that consists of a semiconducting bulk bounded by metallic edges; same holds for other Transition-Metal Dichalcogenides (TMDs) (Mo-,W-,S$_{2}$,Se$_{2}$). We perform first-principles calculations for TMD nanoribbons with reconstructed zig-zag metal terminated edges that contain chalcogen adatoms. All nanorobbons have possitive edge energies when the chemical potential of chalcogens is close to the energy of solids, and negative edge energies for high chemical potential. The reconstruction with two chalcogen adatoms is expected to be the most stable one. In all nanoribbons, a metallic phase is found near their edges, with the Fermi level of this metallic phase being lower than the Fermi level of the 2D material.

cond-mat.mtrl-sci↗

Twistronics: Manipulating the Electronic Properties of Two-dimensional Layered Structures through their Twist Angle

The ability in experiments to control the relative twist angle between successive layers in two-dimensional (2D) materials offers a new approach to manipulating their electronic properties; we refer to this approach as "twistronics". A major challenge to theory is that, for arbitrary twist angles, the resulting structure involves incommensurate (aperiodic) 2D lattices. Here, we present a general method for the calculation of the electronic density of states of aperiodic 2D layered materials, using parameter-free hamiltonians derived from ab initio density-functional theory. We use graphene, a semimetal, and MoS$_2$, a representative of the transition metal dichalcogenide (TMDC) family of 2D semiconductors, to illustrate the application of our method, which enables fast and efficient simulation of multi-layered stacks in the presence of local disorder and external fields. We comment on the interesting features of their Density of States (DoS) as a function of twist-angle and local configuration and on how these features can be experimentally observed.

cond-mat.mes-hall↗

Epsilon-Near-Zero behavior from plasmonic Dirac point: theory and realization using two-dimensional materials

The electromagnetic response of a two-dimensional metal embedded in a periodic array of a dielectric host can give rise to a plasmonic Dirac point that emulates Epsilon-Near-Zero (ENZ) behavior. This theoretical result is extremely sensitive to tructural features like periodicity of the dielectric medium and thickness imperfections. We propose that such a device can actually be realized by using graphene as the 2D metal and materials like the layered semiconducting transition-metal dichalcogenides or hexagonal boron nitride as the dielectric host. We propose a systematic approach, in terms of design characteristics, for constructing metamaterials with linear, elliptical and hyperbolic dispersion relations which produce ENZ behavior, normal or negative diffraction.

physics.optics↗

The Relationship Between Local Structure and Relaxation in Out-of-Equilibrium Glassy Systems

The dynamical glass transition is typically taken to be the temperature at which a glassy liquid is no longer able to equilibrate on experimental timescales. Consequently, the physical properties of these systems just above or below the dynamical glass transition, such as viscosity, can change by many orders of magnitude over long periods of time following external perturbation. During this progress towards equilibrium, glassy systems exhibit a history dependence that has complicated their study. In previous work, we bridged the gap between structure and dynamics in glassy liquids above their dynamical glass transition temperatures by introducing a scalar field called "softness", a quantity obtained using machine learning methods. Softness is designed to capture the hidden patterns in relative particle positions that correlate strongly with dynamical rearrangements of particle positions. Here we show that the out-of-equilibrium behavior of a model glassforming system can be understood in terms of softness. To do this we first demonstrate that the evolution of behavior following a temperature quench is a primarily structural phenomenon: the structure changes considerably, but the relationship between structure and dynamics remains invariant. We then show that the history-dependent relaxation time can be robustly computed from structure as quantified by softness. Together, these results motivate the use of softness to characterize the history dependence of glasses.

cond-mat.soft↗

Mapping Reactive Flow Patterns in Monolithic Nanoporous Catalysts

The development of high-efficiency porous catalyst membranes critically depends on our understanding of where the majority of the chemical conversions occur within the porous structure. This requires mapping of chemical reactions and mass transport inside the complex nano-scale architecture of porous catalyst membranes which is a multiscale problem in both the temporal and spatial domain. To address this problem, we developed a multi-scale mass transport computational framework based on the Lattice Boltzmann Method (LBM) that allows us to account for catalytic reactions at the gas-solid interface by introducing a new boundary condition. In good agreement with experiments, the simulations reveal that most catalytic reactions occur near the gas-flow facing side of the catalyst membrane if chemical reactions are fast compared to mass transport within the porous catalyst membrane.

physics.flu-dyn↗

Electronic Structure Theory of Weakly Interacting Bilayers

We derive electronic structure models for weakly interacting bilayers such as graphene-graphene and graphene-hexagonal boron nitride, based on density functional theory calculations followed by Wannier transformation of electronic states. These transferable interlayer coupling models can be applied to investigate the physics of bilayers with arbitrary translations and twists. The functional form, in addition to the dependence on the distance, includes the angular dependence that results from higher angular momentum components in the Wannier $p_z$ orbitals. We demonstrate the capabilities of the method by applying it to a rotated graphene bilayer, which produces the analytically predicted renormalization of the Fermi velocity, van Hove singularities in the density of states, and Moiré pattern of the electronic localization at small twist angles. We further extend the theory to obtain the effective couplings by integrating out neighboring layers. This approach is instrumental for the design of van der Walls heterostructures with desirable electronic features and transport properties and for the derivation of low-energy theories for graphene stacks, including proximity effects from other layers.

cond-mat.mes-hall↗

Dumbbell Defects in FeSe Films: A Scanning Tunneling Microscopy and First-Principles Investigation

The properties of iron-based superconductors (Fe-SCs) can be varied dramatically with the introduction of dopants and atomic defects. As a pressing example, FeSe, parent phase of the highest-$T_c$ Fe-SC, exhibits prevalent defects with atomic-scale "dumbbell" signatures as imaged by scanning tunneling microscopy (STM). These defects spoil superconductivity when their concentration exceeds 2.5%. Resolving their chemical identity is prerequisite to applications such as nanoscale patterning of superconducting/nonsuperconducting regions in FeSe, as well as fundamental questions such as the mechanism of superconductivity and the path by which the defects destroy it. We use STM and density functional theory to characterize and identify the dumbbell defects. In contrast to previous speculations about Se adsorbates or substitutions, we find that an Fe-site vacancy is the most energetically favorable defect in Se-rich conditions, and reproduces our observed STM signature. Our calculations shed light more generally on the nature of Se capping, the removal of Fe vacancies via annealing, and their ordering into a $\sqrt{5}$$\times$$\sqrt{5}$ superstructure in FeSe and related alkali-doped compounds.

cond-mat.supr-con↗

Bounds on Nanoscale Nematicity in Single-Layer FeSe/SrTiO$_3$

We use scanning tunneling microscopy (STM) and quasiparticle interference (QPI) imaging to investigate the low-energy orbital texture of single-layer FeSe/SrTiO$_3$. We develop a $T$-matrix model of multi-orbital QPI to disentangle scattering intensities from Fe $3d_{xz}$ and $3d_{yz}$ bands, enabling the use of STM as a nanoscale detection tool of nematicity. By sampling multiple spatial regions of a single-layer FeSe/SrTiO$_3$ film, we quantitatively exclude static $xz/yz$ orbital ordering with domain size larger than $δr^2$ = 20 nm $\times$ 20 nm, $xz/yz$ Fermi wave vector difference larger than $δk$ = 0.014 $π$, and energy splitting larger than $δE$ = 3.5 meV. The lack of detectable ordering pinned around defects places qualitative constraints on models of fluctuating nematicity.

cond-mat.supr-con↗

Theory of Graphene Raman Spectroscopy

Raman spectroscopy plays a key role in studies of graphene and related carbon systems. Graphene is perhaps the most promising material of recent times for many novel applications, including electronics. In this paper, the traditional and well established Kramers-Heisenberg-Dirac (KHD) Raman scattering theory (1925-1927) is extended to crystalline graphene for the first time. It demands different phonon production mechanisms and phonon energies than does the popular "double resonance" Raman scattering model. The latter has never been compared to KHD. Within KHD, phonons are produced instantly along with electrons and holes, in what we term an electron-hole-phonon triplet, which does not suffer Pauli blocking. A new mechanism for double phonon production we name "transition sliding" explains the brightness of the 2D mode and other overtones, as a result of linear (Dirac cone) electron dispersion. Direct evidence for sliding resides in hole doping experiments performed in 2011 \cite{chenCrommie}. Whole ranges of electronic transitions are permitted and may even constructively interfere for the same laser energy and phonon q, explaining the dispersion, bandwidth, and strength of many two phonon Raman bands. Graphene's entire Raman spectrum, including dispersive and fixed bands, missing bands not forbidden by symmetries, weak bands, overtone bands, Stokes anti-Stokes anomalies, individual bandwidths, trends with doping, and D-2D band spacing anomalies emerge naturally and directly in KHD theory.

cond-mat.mtrl-sci↗

A structural approach to relaxation in glassy liquids

When a liquid freezes, a change in the local atomic structure marks the transition to the crystal. When a liquid is cooled to form a glass, however, no noticeable structural change marks the glass transition. Indeed, characteristic features of glassy dynamics that appear below an onset temperature, T_0, are qualitatively captured by mean field theory, which assumes uniform local structure at all temperatures. Even studies of more realistic systems have found only weak correlations between structure and dynamics. This raises the question: is structure important to glassy dynamics in three dimensions? Here, we answer this question affirmatively by using machine learning methods to identify a new field, that we call softness, which characterizes local structure and is strongly correlated with rearrangement dynamics. We find that the onset of glassy dynamics at T_0 is marked by the onset of correlations between softness (i.e. structure) and dynamics. Moreover, we use softness to construct a simple model of slow glassy relaxation that is in excellent agreement with our simulation results, showing that a theory of the evolution of softness in time would constitute a theory of glassy dynamics.

cond-mat.soft↗

\textit{Ab-initio} Tight-Binding Hamiltonian for Transition Metal Dichalcogenides

We present an accurate \textit{ab-initio} tight-binding hamiltonian for the transition-metal dichalcogenides, MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$, with a minimal basis (the \textit{d} orbitals for the metal atoms and \textit{p} orbitals for the chalcogen atoms) based on a transformation of the Kohn-Sham density function theory (DFT) hamiltonian to a basis of maximally localized Wannier functions (MLWF). The truncated tight-binding hamiltonian (TBH), with only on-site, first and partial second neighbor interactions, including spin-orbit coupling, provides a simple physical picture and the symmetry of the main band-structure features. Interlayer interactions between adjacent layers are modeled by transferable hopping terms between the chalcogen \textit{p} orbitals. The full-range tight-binding hamiltonian (FTBH) can be reduced to hybrid-orbital k $\cdot$ p effective hamiltonians near the band extrema that captures important low-energy excitations. These \textit{ab-initio} hamiltonians can serve as the starting point for applications to interacting many-body physics including optical transitions and Berry curvature of bands, of which we give some examples.

cond-mat.mes-hall↗

Ab-initio Studies of (Li$_{0.8}$Fe$_{0.2}$)OHFeSe Superconductors: Revealing the Dual Roles of Fe$_{0.2}$ in Structural Stability and Charge Transfer

The recently discovered (Li$_{0.8}$Fe$_{0.2}$)OHFeSe superconductor provides a new platform for exploiting the microscopic mechanisms of high-$T_c$ superconductivity in FeSe-derived systems. Using density functional theory calculations, we first show that substitution of Li by Fe not only significantly strengthens the attraction between the (Li$_{0.8}$Fe$_{0.2}$)OH spacing layers and the FeSe superconducting layers along the \emph{c} axis, but also minimizes the lattice mismatch between the two in the \emph{ab} plane, both favorable for stabilizing the overall structure. Next we explore the electron injection into FeSe from the spacing layers, and unambiguously identify the Fe$_{0.2}$ components to be the dominant atomic origin of the dramatically enhanced interlayer charge transfer. We further reveal that the system strongly favors collinear antiferromagnetic ordering in the FeSe layers, but the spacing layers can be either antiferromagnetic or ferromagnetic depending on the Fe$_{0.2}$ spatial distribution. Based on these understandings, we also predict (Li$_{0.8}$Co$_{0.2}$)OHFeSe to be structurally stable with even larger electron injection and potentially higher $T_c$.

cond-mat.supr-con↗

High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators

The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon that manifests as a quantized transverse conductance in response to a longitudinally applied electric field in the absence of an external magnetic field, and promises to have immense application potentials in future dissipation-less quantum electronics. Here we present a novel kinetic pathway to realize the QAHE at high temperatures by $n$-$p$ codoping of three-dimensional topological insulators. We provide proof-of-principle numerical demonstration of this approach using vanadium-iodine (V-I) codoped Sb$_2$Te$_3$ and demonstrate that, strikingly, even at low concentrations of $\sim$2\% V and $\sim$1\% I, the system exhibits a quantized Hall conductance, the tell-tale hallmark of QAHE, at temperatures of at least $\sim$ 50 Kelvin, which is three orders of magnitude higher than the typical temperatures at which it has been realized so far. The proposed approach is conceptually general and may shed new light in experimental realization of high-temperature QAHE.

cond-mat.mtrl-sci↗

Revealing the Empty-State Electronic Structure of Single-Unit-Cell FeSe/SrTiO$_{3}$

We use scanning tunneling spectroscopy to investigate the filled and empty electronic states of superconducting single-unit-cell FeSe deposited on SrTiO$_3$(001). We map the momentum-space band structure by combining quasiparticle interference imaging with decay length spectroscopy. In addition to quantifying the filled-state bands, we discover a $Γ$-centered electron pocket 75 meV above the Fermi energy. Our density functional theory calculations show the orbital nature of empty states at $Γ$ and suggest that the Se height is a key tuning parameter of their energies, with broad implications for electronic properties.

cond-mat.supr-con↗