arXiv subjects

Ekaterina Khestanova

Publications and source records attributed to Ekaterina Khestanova.

12 recordsLinked to original sources

arXiv2026

Imaging superconducting weak spots through vortex-assisted THz near-field photovoltage

Nanoscale inhomogeneities are a defining feature of many superconducting materials, yet their local electromagnetic response has remained difficult to access experimentally. This is because their relevant energy scale lies in the terahertz range, where wavelengths -- on the order of hundreds of microns -- are too large to spatially resolve nanoscopic variations. Here, we demonstrate the first application of THz near-field photovoltage nanoscopy in a superconductor, achieving 300 nm spatial resolution at 2.52 THz. Scanning a current-biased NbN strip, we reveal photovoltage peaks within the bulk associated with nanoscopic defects of reduced superfluid density. The observed photovoltage follows the evolution of the vortex-dissipative state and is attributed to enhanced vortex-antivortex pair nucleation at defect sites. Together, these results open a direct route to probing how material inhomogeneities influence light-matter interactions in superconductors, with implications for superconducting devices and strongly inhomogeneous systems such as high-Tc and moiré materials.

cond-mat.supr-con↗

arXiv2024

Terahertz photocurrent probe of quantum geometry and interactions in magic-angle twisted bilayer graphene

Moiré materials represent strongly interacting electron systems bridging topological and correlated physics. Despite significant advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here, we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompasses quantum "textures" of electron wavefunctions. Using terahertz light resonant with optical transitions of its flat bands, we observe bulk photocurrents driven by broken symmetries and reveal the interplay between electron interactions and quantum geometry. We observe inversion-breaking gapped states undetectable through quantum transport, sharp changes in the polarization axes caused by interaction-induced band renormalization, and recurring photocurrent patterns at integer fillings of the moiré unit cell that track the evolution of quantum geometry through the cascade of phase transitions. The large and tunable terahertz response intrinsic to flat-band systems offers direct insights into the quantum geometry of interacting electrons and paves the way for innovative terahertz quantum technologies.

cond-mat.mes-hall↗

arXiv2024

Electrostatic control of nonlinear photonic-crystal polaritons in a monolayer semiconductor

Integration of 2D semiconductors with photonic crystal slabs provides an attractive approach to achieve strong light--matter coupling and exciton-polariton formation in a planar chip-compatible geometry. However, for the development of practical devices, it is crucial that the polariton excitations in the structure are easily tunable and exhibit strong nonlinear response. Here we study neutral and charged exciton-polaritons in an electrostatically gated planar photonic crystal slab with an embedded monolayer semiconductor MoSe$_2$ and experimentally demonstrate strong polariton nonlinearity, which can be tuned via gate voltage. We find that modulation of dielectric environment within the photonic crystal results in the formation of two distinct resonances with significantly different nonlinear response, which enables optical switching with ultrashort laser pulses. Our results open new avenues towards development of active polaritonic devices in a compact chip-compatible implementation.

cond-mat.mes-hall↗

arXiv2023

Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical doping by Cs atoms performed under ultra-high vacuum conditions. By PL measurements we identify two interlayer excitons and assign them to the momentum-indirect Q-Gamma and K-Gamma transitions. The energies of these excitons are in a very good agreement with ab initio calculations. We find that the Q-Gamma interlayer exciton is robust to the electron doping and is present at room temperature even at a high charge carrier concentration. Submicrometer angle-resolved photoemission spectroscopy (micro-ARPES) reveals charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayer without changing the band alignment. This leads to a small (10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge doping opens up an opportunity of using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers.

cond-mat.mes-hall↗

arXiv2022

Revealing intrinsic superconductivity of the Nb/BiSbTe$_2$Se interface

Typically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological insulator (TI) surface. Here we observed and analyzed the double critical current in the Josephson junctions based on the topological insulator in the fabricated planar Superconducting Quantum Interference Device. By measuring critical currents as a function of temperature and magnetic field, we show that the second critical current stems from the intrinsic superconductivity of the S/TI interface, which is supported by the modified Resistively Shunted Junction model and Transmission Electron Microscopy studies. This complex structure of the interface should be taken into account when technological process involves Ar-plasma cleaning.

cond-mat.supr-con↗

arXiv2022

Dynamical Control of Interlayer Excitons and Trions in WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ Heterobilayer via Tunable Near-Field Cavity

Emerging photo-induced excitonic processes in transition metal dichalcogenide (TMD) heterobilayers, e.g., coupling, dephasing, and energy transfer of intra- and inter-layer excitons, allow new opportunities for ultrathin photonic devices. Yet, with the associated large degree of spatial heterogeneity, understanding and controlling their complex competing interactions at the nanoscale remains a challenge. Here, we present an all-round dynamic control of intra- and inter-layer excitonic processes in a WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ heterobilayer using multifunctional tip-enhanced photoluminescence (TEPL) spectroscopy. Specifically, we control the radiative recombination path and emission rate, electronic bandgap energy, and neutral to charged exciton conversion with <20 nm spatial resolution in a reversible manner. It is achieved through the tip-induced engineering of Au tip-heterobilayer distance and interlayer distance, GPa scale local pressure, and plasmonic hot-electron injection respectively, with simultaneous spectroscopic TEPL measurements. This unique nano-opto-electro-mechanical control approach provides new strategies for developing versatile nano-excitonic devices based on TMD heterobilayers.

cond-mat.mtrl-sci↗

arXiv2020

Experimental observation of topological exciton-polaritons in transition metal dichalcogenide monolayers

The rise of quantum science and technologies motivates photonics research to seek new platforms with strong light-matter interactions to facilitate quantum behaviors at moderate light intensities. One promising platform to reach such strong light-matter interacting regimes is offered by polaritonic metasurfaces, which represent ultrathin artificial media structured on nano-scale and designed to support polaritons - half-light half-matter quasiparticles. Topological polaritons, or 'topolaritons', offer an ideal platform in this context, with unique properties stemming from topological phases of light strongly coupled with matter. Here we explore polaritonic metasurfaces based on 2D transition metal dichalcogenides (TMDs) supporting in-plane polarized exciton resonances as a promising platform for topological polaritonics. We enable a spin-Hall topolaritonic phase by strongly coupling valley polarized in-plane excitons in a TMD monolayer with a suitably engineered all-dielectric topological photonic metasurface. We first show that the strong coupling between topological photonic bands supported by the metasurface and excitonic bands in MoSe2 yields an effective phase winding and transition to a topolaritonic spin-Hall state. We then experimentally realize this phenomenon and confirm the presence of one-way spin-polarized edge topolaritons. Combined with the valley polarization in a MoSe2 monolayer, the proposed system enables a new approach to engage the photonic angular momentum and valley degree of freedom in TMDs, offering a promising platform for photonic/solid-state interfaces for valleytronics and spintronics.

cond-mat.mes-hall↗

arXiv2020

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric substrates, whose strain states are modified by applied electric fields. Here we overcome this mismatch problem by depositing an epitaxial film of ferromagnetic La0.7Sr0.3MnO3 on a single crystal substrate of well lattice matched SrTiO3 via a film of SrRuO3 that we subsequently dissolved, permitting the transfer of unstrained La0.7Sr0.3MnO3 to a ferroelectric substrate of 0.68Pb(Mg1/3Nb2/3)O3 0.32PbTiO3 in a different crystallographic orientation. Ferroelectric domain switching, and a concomitant ferroelectric phase transition, produced large non volatile changes of magnetization that were mediated by magnetic domain rotations at locations defined by the microstructure - as revealed via high resolution vector maps of magnetization constructed from photoemission electron microscopy data, with contrast from x-ray magnetic circular dichroism. In future, our method may be exploited to control functional properties in dislocation free epitaxial films of any composition.

cond-mat.mtrl-sci↗

arXiv2020

Disjoining pressure oscillations causing height discretization in graphene nanobubbles

Recent experiments and computer simulations observe various geometrical formations of nanobubbles in van der Waals heterostructures. Among the well studied dome and tent geometries, there is yet least understood pancake graphene nanobubbles (GNB). This more exotic form exhibits discrete values of vertical sizes around just a few diameters of the molecules trapped inside the GNBs. We develop a model based on the membrane theory and confined fluids thermodynamics. Our approach describes the equilibrium properties of such flat GNBs. We show that discrete pancake geometry is the result of disjoining pressure induced by the trapped fluid inside GNB. The calculated total energy defines a discrete series of the metastable states with the pancake heights, which are multiple to molecular diameter. We observe that the value and the distribution of the total energy minima crucially depend on the temperature. The energy barriers between metastable states decrease as the temperature becomes larger. Also, we demonstrate that the pancake forms are favorable in the cases of sufficiently low membrane-substrate adhesion energy and the small number of trapped molecules. These properties are in agreement with the published simulations and experiments. The numerical comparison of our result with molecular dynamics results additionally shows the adequacy of the proposed model.

cond-mat.soft↗

arXiv2019

Strained bubbles in van der Waals heterostructures as local emitters of photoluminescence with adjustable wavelength

The possibility to tailor photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDCs) using external factors such as strain, doping and external environment is of significant interest for optoelectronic applications. Strain in particular can be exploited as a means to continuously vary the bandgap. Micrometer-scale strain gradients were proposed for creating 'artificial atoms' that can utilize the so-called exciton funneling effect and work, for example, as exciton condensers. Here we describe room-temperature PL emitters that naturally occur whenever monolayer TMDC is deposited on an atomically flat substrate. These are hydrocarbon-filled bubbles which provide predictable, localized PL from well-separated submicron areas. Their emission energy is determined by the built-in strain controlled only by the substrate material, such that both the maximum strain and the strain profile are universal for all bubbles on a given substrate, i.e., independent of the bubble size. We show that for bubbles formed by monolayer MoS2, PL can be tuned between 1.72 to 1.81 eV by choosing bulk PtSe2, WS2, MoS2 or graphite as a substrate and its intensity is strongly enhanced by the funneling effect. Strong substrate-dependent quenching of the PL in areas of good contact between MoS2 and the substrate ensures localization of the luminescence to bubbles only; by employing optical reflectivity measurements we identify the mechanisms responsible for the quenching. Given the variety of available monolayer TMDCs and atomically flat substrates and the ease of creating such bubbles, our findings open a venue for making and studying the discussed light-emitting 'artificial atoms' that could be used in applications.

cond-mat.mes-hall↗

arXiv2018

Unusual suppression of the superconducting energy gap and critical temperature in atomically thin NbSe2

It is well known that superconductivity in thin films is generally suppressed with decreasing thickness. This suppression is normally governed by either disorder-induced localization of Cooper pairs, weakening of Coulomb screening, or generation and unbinding of vortex-antivortex pairs as described by the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 - an archetypal example of ultrathin superconductors - has been found to remain superconducting down to monolayer thickness. Here we report measurements of both the superconducting energy gap and critical temperature in high-quality monocrystals of few-layer NbSe2, using planar-junction tunneling spectroscopy and lateral transport. We observe a fully developed gap that rapidly reduces for devices with the number of layers N < 5, as does their ctitical temperature. We show that the observed reduction cannot be explained by disorder, and the BKT mechanism is also excluded by measuring its transition temperature that for all N remains very close to Tc. We attribute the observed behavior to changes in the electronic band structure predicted for mono- and bi- layer NbSe2 combined with inevitable suppression of the Cooper pair density at the superconductor-vacuum interface. Our experimental results for N > 2 are in good agreement with the dependences of the gap and Tc expected in the latter case while the effect of band-structure reconstruction is evidenced by a stronger suppression of the gap and the disappearance of its anisotropy for N = 2. The spatial scale involved in the surface suppression of the density of states is only a few angstroms but cannot be ignored for atomically thin superconductors.

cond-mat.supr-con↗

arXiv2015

Superconductivity in potassium-doped metallic polymorphs of MoS2

Superconducting layered transition metal dichalcogenides (TMDs) stand out among other superconductors due to the tunable nature of the superconducting transition, coexistence with other collective electronic excitations (charge density waves) and strong intrinsic spin-orbit coupling. Molybdenum disulphide (MoS2) is the most studied representative of this family of materials, especially since the recent demonstration of the possibility to tune its critical temperature, Tc, by electric-field doping. However, just one of its polymorphs, band-insulator 2H-MoS2, has so far been explored for its potential to host superconductivity. We have investigated the possibility to induce superconductivity in metallic polytypes, 1T- and 1T'-MoS2, by potassium (K) intercalation. We demonstrate that at doping levels significantly higher than that required to induce superconductivity in 2H-MoS2, both 1T and 1T' phases become superconducting, with Tc = 2.8 and 4.6K, respectively. Unusually, K intercalation in this case is responsible both for the structural and superconducting phase transitions. By adding new members to the family of superconducting TMDs our findings open the way to further manipulate and enhance the electronic properties of these technologically important materials.

cond-mat.supr-con↗