SearcharxivSearch

arXiv subjects

Elanur Hut

Publications and source records attributed to Elanur Hut.

2 recordsLinked to original sources

Ultrasensitive Anti-Stokes Luminescence Thermometry in Transition Metal Dichalcogenide Monolayers

Accurate temperature mapping at the nanoscale is a critical challenge in modern science and technology, as conventional methods fail at these dimensions. To address this challenge, we demonstrate a highly sensitive nanothermometer using anti-Stokes photoluminescence, also known as photoluminescence upconversion (UPL), in monolayer tungsten disulfide ($\mathrm{WS_2}$). Leveraging the direct band gap and strong exciton-phonon coupling in the two-dimensional monolayers, we achieve an exceptional relative sensitivity above $4\%\,\mathrm{K}^{-1}$ across the 300 K to 425 K range, ranking it among the best-performing materials reported. A strong resonantly enhanced UPL is observed, confirming the central role of optical phonons in the upconversion mechanism. Furthermore, we introduce a new analytical model to quantitatively describe the UPL process, taking into account the interplay of phonon populations, bandgap narrowing, and substrate effects, which predicts resonant temperatures and provides a framework with broad applicability to any material exhibiting an anti-Stokes photoluminescence response. To demonstrate its use as a high-resolution optical thermometer, we map a $20\,^{\circ}\mathrm{C}$ thermal gradient across a $20\,\mu\mathrm{m}$ long monolayer with a spatial resolution of $1\,\mu\mathrm{m}$. With its high sensitivity, strong signal, and excellent reproducibility, our work establishes monolayer transition metal dichalcogenide as a leading platform for non-invasive thermal sensing in advanced microelectronic and biological systems.

cond-mat.mtrl-sci

Chemical Treatment-Induced Indirect-to-Direct Bandgap Transition in MoS2: Impact on Optical Properties

The unique electrical and optical properties of emerging two-dimensional transition metal dichal-cogenides (TMDs) present compelling advantages over conventional semiconductors, including Si, Ge, and GaAs. Nevertheless, realising the full potential of TMDs in electronic and optoelectronic devices, such as transistors, light-emitting diodes (LEDs), and photodetectors, is con-strained by high contact resistance. This limitation arises from their low intrinsic carrier concen-trations and the current insufficiency of doping strategies for atomically thin materials. Notably, chemical treatment with 1,2-dichloroethane (DCE) has been demonstrated as an effective post-growth method to enhance the n-type electrical conductivity of TMDs. Despite the well-documented electrical improvements post-DCE treatment, its effects on optical properties, specifically the retention of optical characteristics and excitonic behaviour, are not yet clearly under-stood. Here, we systematically investigate the layer- and time-dependent optical effects of DCE on molybdenum disulfide (MoS2) using photoluminescence (PL) spectroscopy and Density Functional Theory (DFT) simulations. Our PL results reveal a rapid reduction in the indirect bandgap transition, with the direct transition remaining unaffected. DFT confirms that chlorine (Cl) atoms bind to sulphur vacancies, creating mid-gap states that facilitate non-radiative recom-bination, explaining the observed indirect PL suppression. This work demonstrates DCE's utility not only for n-type doping but also for optical band structure engineering in MoS2 by selec-tively suppressing indirect transitions, potentially opening new avenues for 2D optoelectronic device design.

cond-mat.mtrl-sci