arXiv subjects

Elena Acinapura

Publications and source records attributed to Elena Acinapura.

2 recordsLinked to original sources

arXiv2026

Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium

Hole spin qubits in semiconductor quantum dots (QDs) enable high-fidelity all-electric control, but conventional electric dipole spin resonance (EDSR) can require substantial rf drive power at the low magnetic fields that are favorable for qubit coherence and readout. In planar Ge hole spin qubits, this can reach -27 dBm at the device, posing challenges for scalable architectures due to heating and crosstalk. Here, we demonstrate a flopping-mode (FM) qubit in Ge, where a single spin is delocalized in a double QD, combining first-order protection against charge noise with exceptionally efficient electric driving. By mapping out coherence sweet-spots as a function of magnetic field orientation we achieve $T_2^*= 1.4μ\mathrm{s}$, $T_2^{\mathrm{Hahn}}= 11.5 μ\mathrm{s}$, $T^{ϕ, \mathrm{CPMG32}}_2= 130 μ\mathrm{s}$, and $T_1= 226 μ\mathrm{s}$, and a single-qubit gate fidelity of up to 99.76$\%$ for a gate time $t_{Xπ} = 88$ ns. Importantly, these results are obtained at a nearly in-plane magnetic field of 5 mT using only -52 dBm drive power at the device. We further find that qubit relaxation in this regime is consistent with a two-photon Orbach process, providing a route for further optimization. Our results demonstrate that FM-EDSR supports ultra-low-power, high-fidelity single-qubit operations, improvements that could benefit scalable hole-spin-based architectures and hybrid spin-photon interfaces.

cond-mat.mes-hall↗

arXiv2025

Low-loss frequency-tunable Josephson junction array cavities on Ge/SiGe heterostructures with a tapered etching approach

Ge/SiGe heterostructures represent a promising platform for hosting various quantum devices such as hole spin qubits and Andreev spin qubits. However, the compatibility of such heterostructures with high-quality-factor microwave superconducting cavities remains a challenge due to defects in the material stack. In this work, we present an approach to enhance the coherence of cavity modes on a reverse-graded Ge/SiGe heterostructure, which consists of etching the full $\sim 1.6~\mathrm{μm}$-thick Ge/SiGe stack down to its starting high-resistivity Si substrate, in order to pattern superconducting cavities directly on it. We engineer the mesa step to be tapered, so that it can be easily climbed by the superconducting cavities to reach the quantum devices potentially hosted in the Ge quantum well. Using this approach, we observe internal quality factors of $Q_\mathrm{i} \approx 10000-20000$ for high-impedance frequency-tunable Josephson junction array resonators, limited by the junctions' fabrication, and $Q_\mathrm{i} \approx 100000$ for $50~\mathrmΩ$ coplanar waveguide Nb lift-off resonators. These $Q_\mathrm{i}$ are preserved despite the overlap with the mesa structure in the climbing region, and are comparable to the ones obtained for identical resonators fabricated on a high-resistivity Si wafer reference. Thereby, this work paves a practical path toward superconductor-semiconductor hybrid devices, immediately applicable to emerging technologies on planar Ge.

quant-ph↗