arXiv subjects

Eli Rotenberg

Publications and source records attributed to Eli Rotenberg.

At least 19 recordsLinked to original sources

arXiv2026

Monolayer van der Waals kagome lattice for high-temperature flat-band physics

Kagome lattice materials host a remarkably rich landscape of novel quantum phenomena, all arising from the intrinsic interplay of topology, correlation, and frustration. While previous studies have been mostly limited to bulk three-dimensional (3D) kagome crystals, the realization of a true two-dimensional (2D) kagome system has remained a long-standing goal, to unlock fundamentally new physics and engineering pathways inaccessible in 3D systems. In this work, we establish the first ideal 2D monolayer kagome lattices by leveraging a novel and versatile van der Waals (vdW) kagome family, A2T3X4 (A = K, Rb, Cs; T = Ni, Pd, Pt; X = S, Se). Our nano-focused angle-resolved photoemission spectroscopy (nano-ARPES) directly characterizes the electronic structure of A2T3X4 down to the monolayer limit, notably revealing an isolated kagome-derived flat band just below the Fermi level. Via gate-engineering of 2D A2T3X4, the kagome flat band can be further tuned to the Fermi level, allowing direct access to the partially filled flat band physics and establishing a qualitatively new 2D flat band platform. Compared to existing moire-based artificial flat band systems, this vdW kagome-based intrinsic flat band system realizes more than 220 times higher flat band electron density, opening an entirely new density and energy regime for exploring 2D flat band physics. Harnessing this high-electron-density flat band in 2D vdW kagome system provides a clear pathway to scale emergent flat band phenomena - such as fractional quantum anomalous Hall states - to far higher temperatures than currently achievable, as long-envisioned in theory and further supported by our many-body calculations.

cond-mat.str-el↗

arXiv2026

Unexpected stabilization of a single-$q$ charge density wave in pristine 1T-TiSe$_2$

Over the past decade, studies revisiting the classical charge-density-wave system 1T-TiSe$_2$, long understood to host the $2 \times 2$ triple-$q$ order with equivalent subcomponents, have suggested that these subcomponents may not be identical, challenging a 50-year-old paradigm. Here, we demonstrate not only that these subcomponents are non-identical but also that they develop sequentially rather than simultaneously. By tracking folded-band features, angle-resolved photoemission spectroscopy reveals that a unidirectional $2 \times 1$ single-$q$ order stabilizes first, while the other two components emerge sequentially at lower temperatures, completing the triple-$q$ phase. Our free-energy analysis explains this hierarchy through repulsive coupling among the three subcomponents, as supported by first-principles calculations incorporating phonon anharmonicity. Consequently, the three subcomponents are inequivalent in both phase and amplitude. These results reconcile reported symmetry breaking and differing characteristic temperatures and establish a framework in which ostensibly simple, high-symmetry charge-density order emerges from temperature-dependent competition and cooperation among inequivalent subcomponents.

cond-mat.str-el↗

arXiv2026

Framework for an AI-Ready ARPES Community Database

Condensed matter stands to gain profoundly from widespread adoption of artificial intelligence (AI). However, its current means of data organization impedes this endeavor. As a premier measure of electronic structure underlying material properties, Angle-Resolved Photoemission Spectroscopy (ARPES) has accumulated over four decades of spectra, yet the community's publication-centered workflow preserves only a highly selected fraction of its experimental record. A shared data ecosystem could transform these fragmented measurements and their contexts into a persistent, collective scientific memory, creating immediate value for reproducibility and reuse while laying the foundation for AI-enabled discovery. In this Perspective, we report outcomes of a recent community workshop and propose a practical path toward such an ecosystem. Its benefits unfold along three timescales. In the near term, standardized, searchable, and citable datasets strengthen analysis pipelines independently of AI. In the intermediate future, community-validated tools operating across laboratories could enable broader reuse and increasingly closed-loop automated experiments. In the long term, a diverse corpus of measured electronic spectra could support foundation models for quantum matter. Looking forward, a diverse corpus of measured electronic spectra could support foundation models for quantum matter and new discoveries. We discuss lessons from existing scientific databases, the current state of AI in ARPES, as well as areas of community convergence on data organization, access, credit, governance, and a staged pilot program.

cond-mat.mtrl-sci↗

arXiv2026

Progress and Prospect of AI in ARPES Workflow

Artificial intelligence (AI) is becoming an increasingly useful tool across the experimental sciences, including angle-resolved photoemission spectroscopy (ARPES), which routinely produces large, multidimensional datasets of electronic structure. Recent advances in AI and machine learning (ML) have opened new opportunities across the entire ARPES workflow, from automated sample preparation and real-time data acquisition to post-experiment data analysis and comparison with theoretical calculations. Despite this progress, a comprehensive review of ML applications, their capabilities, and reliability across the different stages of ARPES workflow is still lacking. In this review, we first introduce ML methods that are most relevant to experimentalists working in condensed matter physics and materials science. We then follow the ARPES workflow, reviewing existing ML applications at each step and discussing their advantages, limitations and potential for future development. We also examine the current ARPES data landscape, where several open databases are available but remain relatively small and fragmented compared with large, shared datasets such as ImageNet. Given these limitations, we suggest that the community focus on sharing pretrained models that can be further trained, adapted to specific tasks, and redistributed, while working toward a larger and standardized open ARPES dataset repository. Finally, we discuss our perspectives on the future of AI within the ARPES workflow using a six-level framework of laboratory automation, highlighting the opportunities and challenges in moving toward a fully autonomous, self-driving ARPES laboratory.

cond-mat.other↗

arXiv2026

Visualization of Tunable Electronic Structure of Monolayer TaIrTe$_4$

Monolayer TaIrTe$_4$ is an ideal platform to explore the tunability of band topology where charge doping converts the quantum spin Hall insulator (QSHI) state into a dual QSHI state. However, experimental visualization of its band structure has been lacking despite its importance in interpreting this topological phase transition. Here we report the band structure of monolayer TaIrTe$_4$ using micro-focused angle-resolved photoemission spectroscopy ($μ$ARPES). Observed dispersions agree with the Heyd-Scuseria-Ernzerhof (HSE) calculations, establishing the insulating ground state without strong electronic correlations. Furthermore, we show an electron-hole asymmetry in the doping response, where hole doping is readily induced by electrostatic gating, whereas electron doping via gating and alkali-metal deposition yields band renormalization instead of a rigid shift. Fractional-charge calculations demonstrate that added electrons shrink the band gap and drive band renormalization. Thus, our work identifies the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe$_4$, beyond the rigid shift behavior.

cond-mat.str-el↗

arXiv2026

Direct observation of flat bands in near-magic-angle twisted bilayer CVD graphene

Advances in chemical vapor deposition (CVD) growth have driven graphene crystal quality to unprecedented levels, yet it is still unknown whether this route can realize the fragile flat-band and correlated states of the magic-angle (MA) twisted bilayer graphene (TBG). Here, we report on the experimental observation by room-temperature nano-angle-resolved photoemission spectroscopy (nano-ARPES) of flat bands in a TBG sample close to the MA, assembled via a grow-and-stack protocol based on low-pressure CVD of graphene on copper. Our study indicates electronic bands fully comparable to those measured in exfoliation-based samples and determines the size of the largest near-MA domain to be compatible with electronic transport experiments, motivating further experiments on flat band physics in CVD-graphene.

cond-mat.mes-hall↗

arXiv2026

Electronic and chemical phase identification in photoemission experiments using unsupervised machine learning

Vacuum ultraviolet photoemission spectroscopies are very information-rich experiments, but due to their surface sensitivity, data are often collected on an initially uncharacterized surface. Traditional raster-grid approaches for locating optimal measurement regions can be time-consuming. In this work, we introduce AARDVARK, a generalizable framework for sample exploration that leverages dimensionality reduction and Gaussian process regression to guide initial sample searches in spatially-resolved photoemission experiments. By utilizing UMAP as a target for a Gaussian process, the algorithm efficiently identifies boundaries of spectroscopically distinct regions, dynamically adapting to variations in sample characteristics. The algorithm enables real-time decision making in measurement selection, optimizes data acquisition, and presents a robust framework for future autonomous sample exploration in photoemission experiments.

cond-mat.mes-hall↗

arXiv2026

Direct visualization of gate-tunable flat bands in twisted double bilayer graphene

The symmetry-broken correlated states in twisted double bilayer graphene (TDBG) can be tuned via several external knobs, including twist angle, displacement field, and carrier density. However, a direct, momentum-resolved characterization of how these parameters reshape the flat-band structure remains limited. In this study, we employ micro focused angle-resolved photoemission spectroscopy to investigate the flat-band dispersion of TDBG at a twist angle of 1.6, systematically varying the displacement field and carrier density via electrostatic gating. We directly observe multiple flat moir'e minibands near charge neutrality, including a flat remote valence band residing below the low-energy flat-band manifold. Furthermore, the dominant Coulomb repulsive energy over the flat- band bandwidth suggests favorable conditions for the emergence of interaction-driven correlated phenomena in TDBG. These findings establish that the formation and evolution of flat bands in TDBG arises from the interplay between the electron filling and the displacement field.

cond-mat.mes-hall↗

arXiv2026

Electrically tunable interfacial thermal conduction via electronic structure engineering in ${Au}$/$Bi_{1-x}$$Sb_{x}$ topological insulators

This work provides direct experimental evidence for the role of topological interface states in thermal conduction across a metal/topological insulator junction. It also shows that this conduction can be reversibly modulated by electrical current injection, offering a new approach toward active control of heat flow at solid-state interfaces. Specifically, the interfacial thermal conductance of ${Au}$/$Bi_{89}$$Sb_{11}$ and ${Au}$/$Bi_{87}$$Sb_{13}$ junctions demonstrates distinct temperature- and bias-dependent behavior. Both responses are attributed to carrier redistribution between topological interface and bulk band states, driven thermally by Fermi-Dirac broadening and electrically by quasi-Fermi-level shifts and WKB tunneling into nearby bulk bands. Control experiments using trivial semimetals and insulating interlayers further confirm the topological specificity of the effect. Such electrically tunable interfacial heat conduction positions interface electronic structure engineering as a promising route for active thermal management. In doing so, it lays the groundwork for a mechanically robust alternative to conventional structure-driven thermal control compatible with increasingly dense, high-power solid-state devices.

cond-mat.mes-hall↗

arXiv2026

Bulk Superconductivity driven by Disorder-Induced Delocalization in 4Hb-Ta(S$_{1-x}$Se$_x$)$_2$

The unconventional superconductor 4Hb-TaS$_2$ is a natural heterostructure that can be broadly understood as interleaving Mott-like and metallic layers. We study the properties of this material as a function of quenched disorder in the form of Se/S substitution and find that while disordered samples show bulk superconductivity, clean samples do not. We show that a disorder-driven delocalization of carriers in the Mott-like ($1T$-) layer forms a new Fermi surface that is absent in the cleanest samples. This suggests that one of the primary drivers for superconductivity is the fragility of the Mott state, whose delocalization brings to life a sea of strongly correlated electrons.

cond-mat.supr-con↗

arXiv2026

p-Wave Orbital Angular Momentum Texture in a Chiral Crystal

The spin and orbital angular momentum (SAM and OAM) are conceptually analogous, yet their roles in condensed matter systems have not been often treated on equal footing. While SAM has been extensively explored, OAM has long been regarded as quenched in crystalline environments and thus largely overlooked. Recent experimental and theoretical advances, however, have demonstrated that OAM can drive a variety of novel electronic phenomena, highlighting the importance of probing OAM textures in the electronic band structure. Here, we investigate the momentum-space OAM texture of (TaSe4)2I, a one-dimensional chiral crystal. Using circular-dichroism angle-resolved photoemission spectroscopy (CD-ARPES), we uncover a p-wave OAM texture accompanied by OAM dipole structures. This orbital p-wave texture is intimately connected to, and thus controllable by the chirality of the host lattice. Complementary spin-resolved ARPES measurements and first-principles calculations reveal that the OAM polarization overwhelmingly dominates the low-energy electronic properties of (TaSe4)2I, far exceeding the SAM polarization. These observations represent the experimental verification of a new type of OAM texture in crystalline materials. Most importantly, these findings underscore a promising material platform for spinless orbitronics applications and lay the foundation for realizing multipolar OAM textures-orbital counterparts of the spin texture in unconventional magnets.

cond-mat.mtrl-sci↗

arXiv2025

Revealing the Electronic Structure of van der Waals Antiferromagnetic NiPS$_3$ through Synchrotron-Based $μ$-ARPES and Alkali Metal Dosing

This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$. Comparison with DFT calculations allows for the identification of the orbital character of the observed bands. Our DFT calculations perfectly match the experimental results, and no adaptations were made to the calculations based on the experimental outcomes. The appearance of novel electronic structure upon alkali metal dosing (AMD) were also obtained in this ARPES study. Above valence band maximum, structure of conduction bands and bands from defect states were firstly observed in NiPS$_3$. We provide the direct determination of the band gap of NiPS$_3$ as 1.3 eV from the band structure by AMD. In addition, detailed temperature dependent ARPES spectra were obtained across a range that spans both below and above the Néel transition temperature of NiPS$_3$. We found that the paramagnetic and antiferromagnetic states have almost identical spectra, indicating the highly localized nature of Ni $d$ states.

cond-mat.mtrl-sci↗

arXiv2025

Spin Excitations and Flat Electronic Bands in a Cr-based Kagome Superconductor

In the quest for topology- and correlation-driven quantum states, kagome lattice materials have garnered significant interest for their band structures, featuring flat bands (FBs) from the quantum destructive interference of the electronic wavefunction. Tuning an FB to the chemical potential could induce electronic instabilities and emergent orders. Despite extensive studies, direct evidence of FBs tuned to the chemical potential and their role in emergent orders in bulk materials remains lacking. Using angle-resolved photoemission spectroscopy, resonant inelastic X-ray scattering, and density functional theory, we show that the low-energy structure of the Cr-based kagome metal superconductor {\Cr} is dominated by FBs at the Fermi level. We also observe low-energy magnetic excitations evolving across the low-temperature transition, largely consistent with the FB shift. Our results suggest that the low-temperature order contains a magnetic origin and that the kagome FBs may play a role in the emergence of this order.

cond-mat.str-el↗

arXiv2025

Influence of Bi Alloying on GaAs Valence Band Structure

Bi alloying is predicted to transform GaAs from a semiconductor to a topological insulator or semi-metal. To date, studies of the GaAs$_{1-x}$Bi$_x$ alloy band structure have been limited, and the origins of Bi-induced enhancement of the spin-orbit splitting energy, $Δ_\mathrm{SO}$, are unresolved. Here, we present high-resolution angle-resolved photoemission spectroscopy (ARPES) of droplet-free epitaxial GaAs$_{1-x}$Bi$_x$ films with $x_{\mathrm{Bi}}$ = 0.06. In addition to quantifying the Bi-induced shifts of the light-hole and heavy-hole valence bands, we probe the origins of the Bi-enhanced $Δ_\mathrm{SO}$. Using exact-two-component density functional theory calculations, we identify the key role of Bi p-orbitals in the upward shift of the light-hole and heavy-hole bands that results in the Bi-enhanced $Δ_\mathrm{SO}$.

cond-mat.mtrl-sci↗

arXiv2025

Mesoscale variations of chemical and electronic landscape on the surface of Weyl semimetal Co$_3$Sn$_2$S$_2$ visualized by ARPES and XPS

The multiple crystalline terminations in magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ display distinct topological and trivial surface states, which have successfully been distinguished experimentally. However, a model of pure terminations is known to be inadequate because these surfaces exhibit a high degree of spatial heterogeneity and point disorder. Here we perform a spectromicroscopy study of the surface chemistry and surface electronic structure using photoemission measurements in combination with first-principles calculations of core levels. We identify an intermediate region with properties distinct from both the sulfur and tin terminations, and demonstrate that the spectral features in this region can be associated with a disordered termination with a varying density of surface tin vacancies. This work establishes heuristics for identifying variable surface disorder using photoemission, an important prerequisite to experimentally establishing the behavior of momentum-space topological surface features subject to variable surface disorder on a single cleave.

cond-mat.mtrl-sci↗

arXiv2025

Strain-tunability of the multipolar Berry curvature in altermagnet MnTe

The anomalous Hall effect describes the generation of a transverse voltage by a longitudinal current even in the absence of an external magnetic field. While typically observed in ferromagnets, it has also been predicted to arise in altermagnets, materials characterized by rotational symmetries that enable broken time reversal symmetry despite compensated collinear magnetic ordering. These symmetries enforce band (anti)crossings that can generate significant contributions to the Berry curvature that drives the anomalous Hall effect. This Berry curvature is predicted to exhibit a characteristic multipolar order, resulting in a symmetry-enforced distribution at or near net compensation which is highly sensitive to perturbations that distort this balance. However, exploring the predicted multipolar Berry curvature of altermagnets and its reversible manipulation remains challenging. Here, we demonstrate evidence for the multipolar nature of the altermagnetic Berry curvature in MnTe by tuning the anomalous Hall effect via uniaxial stress. Upon straining, the magnitude of the anomalous Hall conductivity changes and, at a critical strain of 0.14%, the sign is reversed. Symmetry analysis and density functional theory calculations reveal that this tunability is a direct consequence of the altermagnetic multipolar Berry curvature. Our results provide insight into the role of crystal and magnetic symmetries in the realization of higher-order Berry curvature distributions and their unique tunability.

cond-mat.mtrl-sci↗

arXiv2025

Spin-polarised surface fermiology of ohmic WSe$_2$/NbSe$_2$ interfaces

Discovering and engineering spin-polarised surface states in the electronic structures of condensed matter systems is a crucial first step in development of spintronic devices, wherein spin-polarised bands crossing the Fermi level can facilitate information transfer. Here, we show how the spin-orbit split K-point valleys of monolayer WSe$_2$ can be made potentially suitable for this purpose, despite the semiconducting ground state. By interfacing with metallic 2H-NbSe$_2$, these valence band extrema are shifted by $\sim$800~meV to produce a surface-localised Fermi surface populated only by spin-polarised carriers. By increasing the WSe$_2$ thickness, the Fermi pockets can be moved from K to $Γ$, demonstrating tunability of novel semi-metallic phases that exist atop a substrate additionally possessing charge density wave and superconducting transitions. Together, this study provides spectroscopic understanding into $p$-type, Schottky barrier-free interfaces, which are of urgent interest for bypassing the limitations of current-generation vertical field effect transistors, in addition to longer-term spintronics development.

cond-mat.mtrl-sci↗

arXiv2025

Designer three-dimensional electronic bands in asymmetric transition metal dichalcogenide heterostructures

Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moiré systems, where a lattice mismatch or twist between monolayers generates an emergent in-plane periodicity, giving rise to electronic properties absent in the constituent materials. In contrast, vertical superlattices, formed by stacking dissimilar materials in the out-of-plane direction on the nanometer scale, have received far less attention despite their potential to realize analogous emergent phenomena in three dimensions. Through angle-resolved photoemission spectroscopy and density functional theory, we investigate six-to-eight-layer transition metal dichalcogenide (TMD) heterostructures constructed from pairs of stacked few-layer materials. Counterintuitively, we find that even these single superlattice units can host fully-delocalised bands, evidencing a robust coherent interlayer coupling across lattice-mismatched interfaces over extended spatial scales. We show how uncompensated semimetallic phases and energetically-mismatched topological surface states are readily and exclusively stabilized within such asymmetrical architectures. These findings establish two-component heterostructures in the intermediate layer-regime as platforms to invoke and control unprecedented combinations and instances of the diverse quantum phases native to many-layer TMDs.

cond-mat.mtrl-sci↗