arXiv subjects

Elia Strambini

Publications and source records attributed to Elia Strambini.

39 records · Page 3Linked to original sources

arXiv2017

Quasiparticle entropy in superconductor/normal metal/superconductor proximity junctions in the diffusive limit

We discuss the quasiparticle entropy and heat capacity of a dirty superconductor-normal metal-superconductor junction. In the case of short junctions, the inverse proximity effect extending in the superconducting banks plays a crucial role in determining the thermodynamic quantities. In this case, commonly used approximations can violate thermodynamic relations between supercurrent and quasiparticle entropy. We provide analytical and numerical results as a function of different geometrical parameters. Quantitative estimates for the heat capacity can be relevant for the design of caloritronic devices or radiation sensor applications.

cond-mat.supr-con↗

arXiv2017

High operating temperature in V-based superconducting quantum interference proximity transistors

Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52$\ \textrm{mV}/Φ_0$) and flux-to-current (above 12$\ \textrm{nA}/Φ_0$) transfer functions, with the best estimated flux sensitivity $\sim$2.6$\ μΦ_0/\sqrt{\textrm{Hz}}$ reached under fixed voltage bias, where $Φ_0$ is the flux quantum. The interferometers operate up to $T_\textrm{bath}\simeq$ 2 $ \textrm{K}$, with an improvement of 70$\%$ of the maximal operating temperature with respect to early SQUIPTs design. The main features of the V-based SQUIPT are described within a simplified theoretical model. Our results open the way to the realization of SQUIPTs that take advantage of the use of higher-gap superconductors for ultra-sensitive nanoscale applications that operate at temperatures well above 1 K.

cond-mat.mes-hall↗

arXiv2016

InAs nanowire superconducting tunnel junctions: spectroscopy, thermometry and nanorefrigeration

We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with the BCS theoretical expectations of a superconducting tunnel junction. The studied devices combine small-scale tunnel contacts working as thermometers as well as larger electrodes that provide a proof-of-principle active {\em cooling} of the electron distribution in the nanowire. A peak refrigeration of about $δT = 10\,{\rm mK}$ is achieved at a bath temperature $T_{bath}\approx250-350\,{\rm mK}$ in our prototype devices. This method opens important perspectives for the investigation of thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration.

cond-mat.mes-hall↗