Elias Arnqvist | Searcharxiv

arXiv2026

NESSA: a compact 14 MeV D-T neutron source facility at Uppsala University

The NESSA (Neutron Source in Uppsala) facility hosts a compact 14 MeV deuterium-tritium sealed tube neutron generator at the Ångström Laboratory, Uppsala University. The generator, housed in a bunker inside the FREIA hall, reaches a maximum yield of $4.7\times10^{8}$ n/s. This paper describes the facility: the generator, the bunker and its shielding, the detector systems, and the Monte Carlo models used to characterize the neutron field. We also report the first commissioning measurements: yield calibration with $^{93}$Nb activation foils, fission chamber response at two positions, and simulated air and structural activation. Initial indium foil activations and single event effect (SEE) tests on silicon devices are also presented. The facility will be used for nuclear data measurements, neutron detector response studies, moderation and thermalization experiments, irradiation testing of electronics as well as for training and education.

physics.ins-det↗

arXiv2025

Characterisation of Crystalline Defects in 4H Silicon Carbide using DLTS and TSC

Future hadron collider experiments will require sensing materials that withstand stronger radiation fields. Therefore, either a frequent replacement of detectors, a significant increase in radiation hardness of Silicon, or a shift to different materials is needed. Wide-bandgap materials are a natural choice, due to their significantly reduced leakage currents, even after irradiation. In recent years, substantial progress in the production of high-quality monocrystalline Silicon Carbide of the 4H polytype has led to a renewed interest in this material. In this article, a study of electrically active defects in a n-type epitaxial 4H Silicon Carbide diode is presented. By employing spectroscopical measurement methods, like Deep-Level Transient Spectroscopy (DLTS) and Thermally Stimulated Currents (TSC), energy levels in the bandgap are investigated. Defect parameters like concentration, activation energy and capture cross-section are stated. A simulation framework was utilised to compare and match the results from the two methods. This study is made in the context of a study of radiation hardness of 4H Silicon Carbide sensors. Other studies investigating macroscopic properties of the material, like their charge collection efficiency after irradiation, were performed on the same kind of diodes. This study provides a first set of measured defect parameters in state-of-the-art 4H-SiC material, from defects present prior to irradiation. These defects are intrinsic, such as vacancies, related to impurities and doping imperfections, or are growth related. The $Z_\text{1/2}$ defect and a Nitrogen related defect were identified.

physics.ins-det↗