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Elijah Mossman

Publications and source records attributed to Elijah Mossman.

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A broadband, individually addressing two- and three-dimensional photonic integrated circuit for trapped-ion qubit control

Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from $\lambda$ = 405 - 880 nm with -27 dB average intensity crosstalk at $5\,\mu\mathrm{m}$ pitch. We trap $^{40}\mathrm{Ca}^{+}$ and $^{138}\mathrm{Ba}^{+}$ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.

quant-ph

Barium Autoionization for Efficient Ion Trap Loading

We report a theoretical and experimental investigation of autoionizing resonances from the $5d6p\,{}^3\mathrm{D}_1^o$ manifold in neutral barium for efficient loading of ion traps. Our calculations predict large resonant cross sections for many narrow autoionizing resonances, but we find experimentally that for most of these, Doppler broadening during trap loading depresses the effective cross sections that can be achieved in practice. We identify and demonstrate a strong, broad transition at $531\,\mathrm{nm}$, and show that it furnishes an order-of-magnitude increase in trap loading efficiency compared to other demonstrated resonances.

physics.atom-ph

Pairwise-parallel entangling gates on orthogonal modes in a trapped-ion chain

Parallel operations are important for both near-term quantum computers and larger-scale fault-tolerant machines because they reduce execution time and qubit idling. We propose and implement a pairwise-parallel gate scheme on a trapped-ion quantum computer. The gates are driven simultaneously on different sets of orthogonal motional modes of a trapped-ion chain. We demonstrate the utility of this scheme by creating a GHZ state in one step using parallel gates with one overlapping qubit. We also show its advantage for circuits by implementing a digital quantum simulation of the dynamics of an interacting spin system, the transverse-field Ising model. This method effectively extends the available gate depth by up to two times with no overhead apart from additional initial cooling when no overlapping qubit is involved. This is because using a set of extra modes as additional quantum degrees of freedom is nearly equivalent to halving the trap heating rate, doubling the laser and qubit coherence time, and extending the controller memory depth by up to a factor of two. This scheme can be easily applied to different trapped-ion qubits and gate schemes, broadly enhancing the capabilities of trapped-ion quantum computers.

quant-ph