arXiv subjects

Elizaveta Semenova

Publications and source records attributed to Elizaveta Semenova.

45 records · Page 3Linked to original sources

arXiv2018

Comparison of processing-induced deformations of InP bonded to Si determined by e-beam metrology: direct vs. adhesive bonding

In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. After experimental study of three different bonding and processing configurations which represent typical on-chip photonic device fabrication conditions, the smallest degree of linearly-corrected distortion errors is obtained for the directly bonded wafer, with the alignment marks both formed and measured on the same InP layer side after bonding (equivalent to single-sided processing of the bonded layer). Under these conditions, multilayer exposure alignment accuracy is limited by the InP layer deformation after the initial pattern exposure mainly due to the mechanical wafer clamping in the e-beam cassette. Bonding-induced InP layer deformations dominate in cases of direct and BCB bonding when the alignment marks are formed on one InP wafer side, and measured after bonding and substrate removal from another (equivalent to double-sided processing of the bonded layer). The findings of this paper provide valuable insight into the origin of the multilayer exposure misalignment errors for the bonded III-V on Si wafers, and identify important measures that need to be taken to optimize the fabrication procedures for demonstration of efficient and high-performance on-chip photonic integrated devices.

physics.app-ph↗

arXiv2018

Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography

We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength range around 1.55 um and above. We investigated a new type of diblock copolymer PS-b-PDMS (polystyrene-block-polydimethylsiloxane) for the fabrication of silicon oxycarbide hard mask for selective area epitaxy of InAs/InP quantum dots. An array of InAs/InP quantum dots was selectively grown via droplet epitaxy. Our detailed investigation of the quantum dot carrier dynamics in the 10-300 K temperature range indicates the presence of a density of states located within the InP bandgap in the vicinity of quantum dots. Those defects have a substantial impact on the optical properties of quantum dots.

cond-mat.mtrl-sci↗

arXiv2018

Strong continuity for the 2D Euler equations

We prove two results of strong continuity with respect to the initial datum for bounded solutions to the Euler equations in vorticity form. The first result provides sequential continuity and holds for a general bounded solution. The second result provides uniform continuity and is restricted to Hölder continuous solutions.

math.AP↗

arXiv2016

Demonstration of a self-pulsing photonic crystal Fano laser

Semiconductor lasers in use today rely on mirrors based on the reflection at a cleaved facet or Bragg reflection from a periodic stack of layers. Here, we demonstrate an ultra-small laser with a mirror based on the Fano resonance between a continuum of waveguide modes and the discrete resonance of a nanocavity. The Fano resonance leads to unique laser characteristics. Since the Fano mirror is very narrow-band compared to conventional lasers, the laser is single-mode and in particular, it can be modulated via the mirror. We show, experimentally and theoretically, that nonlinearities in the mirror may even promote the generation of a self-sustained train of pulses at gigahertz frequencies, an effect that was previously only observed in macroscopic lasers. Such a source is of interest for a number of applications within integrated photonics.

physics.optics↗

arXiv2015

AlGaAs-On-Insulator Nonlinear Photonics

The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm is obtained. Our demonstration shows the huge potential of the AlGaAs-on-insulator platform in integrated nonlinear photonics.

physics.optics↗

arXiv2015

Threshold Characteristics of Slow-Light Photonic Crystal Lasers

The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a minimum value for a specific cavity length. The experimental results are explained by an analytical theory for the laser threshold that takes into account the effects of slow-light and random disorder due to unavoidable fabrication imperfections. Longer lasers are found to operate deeper into the slow-light region, leading to a trade-off between slow-light induced reduction of the mirror loss and slow-light enhancement of disorder-induced losses.

physics.optics↗

arXiv2014

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS-compatible processes. It has the potential for ultrahigh-speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.

physics.optics↗

arXiv2014

Slow-light enhanced gain in active photonic crystal waveguides

Slow light is a fascinating physical effect, raising fundamental questions related to our understanding of light-matter interactions as well as offering new possibilities for photonic devices. From the first demonstrations of slow light propagation in ultra-cold atomic gasses, solid-state Ruby and photonic crystal structures, focus has shifted to applications, with slow light offering the ability to enhance and control light-matter interactions. The demonstration of tuneable delay lines, enhanced nonlinearities and spontaneous emission, enlarged spectral sensitivity and increased phase shifts illustrate the possibilities enabled by slow light propagation, with microwave photonics emerging as one of the promising applications. Here, we demonstrate that slow light can be used to control and increase the gain coefficient of an active semiconductor waveguide. The effect was theoretically predicted but not yet experimentally demonstrated. These results show a route towards realizing ultra-compact optical amplifiers for linear and nonlinear applications in integrated photonics and prompts further research into the rich physics of such structures.

physics.optics↗

arXiv2007

Microcavity polariton light emitting diode

Cavity polaritons have been shown these last years to exhibit a rich variety of non-linear behaviors which could be used in new polariton based devices. Operation in the strong coupling regime under electrical injection remains a key step toward a practical polariton device. We report here on the realization of a polariton based light emitting diode using a GaAs microcavity with doped Bragg mirrors. Both photocurrent and electroluminescence spectra are governed by cavity polaritons up to 100 K.

cond-mat.mtrl-sci↗