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Emanuele Pelucchi

Publications and source records attributed to Emanuele Pelucchi.

At least 19 recordsLinked to original sources

Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices

The scalability of quantum photonic integrated circuits opens the path towards large-scale quantum computing and communication. To date, this scalability has been limited by the stochastic nature of the quantum light sources. Moreover, hybrid integration of different platforms will likely be necessary to combine state-of-the-art devices into a functioning architecture. Here, we demonstrate the active alignment and edge-coupling of arrays of ten site-controlled gallium arsenide quantum dots to an array of ten silicon nitride single-mode waveguides, at cryogenic temperatures. The coupling is facilitated by the fabrication of nanopillars, deterministically self-aligned around each quantum dot, leading to a high-yield and regular array of single-photon sources. An on-chip beamsplitter verifies the triggered emission of single photons into the silicon nitride chip. The low inhomogeneous broadening of the ensemble enables us to observe the spectral overlap of adjacent site-controlled emitters. Across the array of waveguides, the signal collected from each coupled quantum dot is consistently and reproducibly 0.17 relative to the free-space collection from the very same single-photon source. Comparing measurement with waveguide simulations, we infer that absolute coupling efficiencies of $\approx 5 \%$ are currently obtained between our quantum dots and the waveguides.

physics.optics

Long-Baseline Atom Interferometry

Long-baseline atom interferometry is a promising technique for probing various aspects of fundamental physics, astrophysics and cosmology, including searches for ultralight dark matter (ULDM) and for gravitational waves (GWs) in the frequency range around 1~Hz that is not covered by present and planned detectors using laser interferometry. The MAGIS detector is under construction at Fermilab, as is the MIGA detector in France. The PX46 access shaft to the LHC has been identified as a very suitable site for an atom interferometer of height $\sim 100$m, sites at the Boulby mine in the UK and the Canfranc Laboratory are also under investigation, and possible sites for km-class detectors have been suggested. The Terrestrial Very-Long-Baseline Atom Interferometry (TVLBAI) Proto-Collaboration proposes a coordinated programme of interferometers of increasing baselines.

hep-ex

Self-aligned pillar arrays embedding site-controlled single quantum dots for enhanced non-classical light emission

This work presents a foundational approach for fabricating arrays of self-aligned micro- and nanopillar structures incorporating individual site-controlled quantum dots (QDs) for enhanced light extraction. This method leverages the non-planar surface morphology of pyramidal QD samples to define dielectric masks self - aligned to the QD positions. The mask size, and consequently the lateral dimensions of the pillars, is precisely controlled through a chemical mechanical polishing step, obviating the need for any additional lithography step for creating the pillar. This fabrication technique offers several key advantages, including precise control over the pillar sites, and fully deterministic embedding of QD structures. The functionality of the structures was validated by integrating single In0.25Ga0.75As QDs - upon two-photon excitation of the biexciton state, the emission of single and polarization-entangled photon pairs was observed. Additionally, an extra fabrication step to deposit dome-like structures atop the pillars was demonstrated, effectively enhancing light extraction efficiency up to 12%.

physics.optics

Evaluating the local bandgap across InxGa1-xAs multiple quantum wells in a metamorphic laser via low-loss EELS

Using high resolution scanning transmission electron microscopy and low-loss electron energy loss spectroscopy, we correlate the local bandgap (Eg), indium concentration, and strain distribution across multiple InxGa1-xAs quantum wells (QWs), on a GaAs substrate, within a metamorphic laser structure. Our findings reveal significant inhomogeneities, particularly near the interfaces, for both the indium and strain distribution, and subtle variations in the Eg across individual QWs. The interplay between strain, composition, and Eg was further explored by density functional theory simulations, indicating that variations in the Eg are predominantly influenced by the indium concentration, with strain playing a minor role. The observed local inhomogeneities suggest that differences between individual QWs may affect the collective emission and performance of the final device. This study highlights the importance of spatially resolved analysis in understanding and optimising the electronic and optical properties for designing of next-generation metamorphic lasers with multiple QWs as the active region.

cond-mat.mtrl-sci

On the multifaceted journey for the invention of epitaxial quantum dots

Epitaxial semiconductor quantum dots have been, in the last 40 years or so, at the center of the research effort of a large community. The focus being on semiconductor physics and devices, in view of the broad applications and potential, e.g., for efficient temperature insensitive lasers at telecom wavelengths, or as artificial atoms for quantum information processing. Our manuscript aims at addressing, with an historical perspective, the specifics of (III-V) epitaxial quantum dot early developments (largely for light emitting) and subsequent years. We will not only highlight the variety of epitaxial structures and methods, but also, intentionally glancing a didactic approach, discuss aspects that are, in general, little acknowledged or debated in the present literature. The analyses will also naturally bring us to examine some of current challenges, in a field which, despite sensational achievements, is, remarkably, still far from being mature in its developments and applications.

cond-mat.mes-hall

An intuitive scheme for the restoration of entanglement for polarization-entangled photons emitted from quantum dots with non-vanishing fine structure splitting

Generation of polarization-entangled photons from quantum dots via the biexciton-exciton recombination cascade is complicated by the presence of an energy spitting between the intermediate excitonic levels, which severely degrades the quality of the entangled photon source. In this paper we present a novel, conceptually simple and straightforward proposal for restoring the entanglement of said source by applying a cascade of time-dependent operations on the emitted photons. This is in striking contrast with the techniques usually employed, that act on the quantum emitter itself in order to remove the fine structure splitting at its root. The feasibility of the implementation with current technology is discussed, and the robustness of the proposed compensation scheme with respect to imperfections of the experimental apparatus is evaluated via a series of Monte Carlo simulations.

quant-ph

Distributing entanglement with separable states: assessment of encoding and decoding imperfections

Entanglement can be distributed using a carrier which is always separable from the rest of the systems involved. Up to now, this effect has predominantly been analyzed in the case where the carrier-system interactions take the form of ideal unitary operations, thus leaving untested its robustness against either non-unitary or unitary errors. We address this issue by considering the effect of incoherent dynamics acting alongside imperfect unitary interactions. In particular, we determine the restrictions that need to be placed on the interaction time, as well as the strength of the incoherent dynamics. We find that with non-unitary errors, we can still successfully distribute entanglement, provided we measure the carrier in a suitable basis. Introducing imperfections in the unitary dynamics, we show that entanglement gain is possible even with substantial unitary errors. Moreover, certain variations in the strength of the unitary dynamics can allow for greater robustness against non-unitary errors. Therefore, even in experimental settings where unitary operations cannot be carried out without imperfections, it is still possible to generate entanglement between two systems using a separable carrier.

quant-ph

The importance of overcoming MOVPE surface evolution instabilities for >1.3 $μ$m metamorphic lasers on GaAs

We investigated and demonstrated a 1.3 $μ$m-band laser grown by metalorganic vapour phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic graded In$_x$Ga$_{1-x}$As buffer and epitaxial structure on a GaAs substrate. Bottom and upper cladding layers were built as a combination of AlInGaAs and InGaP alloys in a superlattice sequence. This was implemented to overcome (previously unreported) detrimental surface epitaxial dynamics and instabilities: when single alloys are utilised to achieve thick layers on metamorphic structures, surface instabilities induce defect generation. This has represented a historically limiting factor for metamorphic lasers by MOVPE. We describe a number of alternative strategies to achieve smooth surface morphology to obtain efficient compressively strained In$_{0.4}$Ga$_{0.6}$As quantum wells in the active layer. The resulting lasers exhibited low lasing threshold with total slope efficiency of 0.34 W/A for a 500 $μ$m long ridge waveguide device. The emission wavelength is extended as far as 1360 nm.

physics.app-ph

Biexciton Initialization by Two-Photon Excitation in Site-Controlled Quantum Dots: the Complexity of the Antibinding State Case

In this work, we present a biexciton state population in (111)B oriented site-controlled InGaAs quantum dots (QDs) by resonant two photon excitation. We show that the excited state recombines emitting highly pure single photon pairs entangled in polarization. The discussed cases herein are compelling due to the specific energetic structure of Pyramidal InGaAs QDs - an antibinding biexciton - a state with a positive binding energy. We demonstrate that resonant two-photon excitation of QDs with antibinding biexcitons can lead to a complex excitation-recombination scenario. We systematically observed that the resonant biexciton state population is competing with an acoustic-phonon assisted population of an exciton state. These findings show that under typical two-photon resonant excitation conditions deterministic biexciton state initialization can be compromised. This complication should be taken into account by the community members aiming to utilise similar epitaxial QDs with an antibinding biexciton.

quant-ph

Micro-transfer printing high-efficiency GaAs photovoltaic cells onto silicon for wireless power applications

Here we report the development of high-efficiency microscale GaAs laser power converters, and their successful transfer printing onto silicon substrates, presenting a unique, high power, low-cost and integrated power supply solution for implantable electronics, autonomous systems and internet of things applications. We present 300 μm diameter single-junction GaAs laser power converters and successfully demonstrate the transfer printing of these devices to silicon using a PDMS stamp, achieving optical power conversion efficiencies of 48% and 49% under 35 and 71 W/cm2 808 nm laser illumination respectively. The transferred devices are coated with ITO to increase current spreading and are shown to be capable of handling very high short-circuit current densities up to 70 A/cm2 under 141 W/cm2 illumination intensity (~1400 Suns), while their open circuit voltage reaches 1235 mV, exceeding the values of pre-transfer devices indicating the presence of photon-recycling. These optical power sources could deliver Watts of power to sensors and systems in locations where wired power is not an option, while using a massively parallel, scalable, and low-cost fabrication method for the integration of dissimilar materials and devices.

physics.app-ph

Vanishing biexciton binding energy from stacked, MOVPE grown, site-controlled pyramidal quantum dots for twin photon generation

We characterized stacked double-pyramidal quantum dots which showed biexciton binding energies close to zero by means of photoluminescence and cross-correlation measurements. It was possible to obtain a sequence of two photons with (nearly) the same energy from the biexciton-exciton-ground state cascade, as corroborated by a basic rate-equation model. This type of two-photon emission is both of relevance for fundamental quantum information theory studies as well as for more exotic applicative fields such as quantum biology.

cond-mat.mes-hall

Three-dimensional Self-assembled Columnar Arrays of AlInP Quantum Wires for Polarized Micron-sized Amber Light Emitting Diodes

A three-dimensional ordered and self-organized semiconductor system emitting highly-polarized light in the yellow-orange visible range (580-650 nm) is presented, comprising self-assembled in-plane AlInP wires vertically stacked in regularly-spaced columns. More than 200 wires per column without detectable defect formation could be stacked. Theoretical simulations and temperature-dependent photoluminescence provided a benchmark to engineer multilayered structures showing internal quantum efficiency at room temperature larger than comparable quantum wells emitting at similar wavelengths. Finally, proof-of-concept light emitting diodes (LED) showed a high degree of light polarization and lower surface parasitic currents than comparable quantum well LEDs, providing an interesting perspective for high-efficiency polarized yellow-orange light emitting devices.

physics.app-ph

Self-ordered nanostructures on patterned substrates: Experiment and theory of metalorganic vapor-phase epitaxy of V-groove quantum wires and pyramidal quantum dots

The formation of nanostructures during metalorganic vapor-phase epitaxy on patterned (001)/(111)B GaAs substrates is reviewed. The focus of this review is on the seminal experiments that revealed the key kinetic processes during nanostructure formation and the theory and modelling that explained the phenomenology in successively greater detail. Experiments have demonstrated that V-groove quantum wires and pyramidal quantum dots result from self-limiting concentration profiles that develop at the bottom of V-grooves and inverted pyramids, respectively. In the 1950s, long before the practical importance of patterned substrates became evident, the mechanisms of capillarity during the equilibration of non-planar surfaces were identified and characterized. This was followed, from the late 1980s by the identification of growth rate anisotropies (i.e. differential growth rates of crystallographic facets) and precursor decomposition anisotropies, with parallel developments in the fabrication of V-groove quantum wires and pyramidal quantum dots. The modelling of these growth processes began at the scale of facets and culminated in systems of coupled reaction-diffusion equations, one for each crystallographic facet that defines the pattern, which takes account of the decomposition and surface diffusion kinetics of the group-III precursors and the subsequent surface diffusion and incorporation of the group-III atoms released by these precursors. Solutions of the equations with optimized parameters produced concentration profiles that provided a quantitative interpretation of the time-, temperature-, and alloy-concentration dependence of the self-ordering process seen in experiments.

cond-mat.mes-hall

Lithographyically defined, room temperature low threshold subwavelength red-emitting hybrid plasmonic lasers

Hybrid plasmonic lasers provide deep subwavelength optical confinement, strongly enhanced light-matter interaction and together with nanoscale footprint promise new applications in optical communication, bio-sensing and photolithography. The subwavelength hybrid plasmonic lasers reported so far often use bottom up grown nanowires, nanorods and nanosquares, making it difficult to integrate these devices into industry-relevant high density plasmonic circuits. Here, we report the first experimental demonstration of AlGaInP based, red-emitting hybrid plasmonic lasers at room temperature using lithography based fabrication processes. Resonant cavities with deep subwavelength 2D and 3D mode confinement of lambda square/56 and lambda cube/199, respectively are demonstrated. A range of cavity geometries (waveguides, rings, squares and disks) show very low lasing thresholds of 0.6-1.8 mJ/cm square with wide gain bandwidth (610 nm-685 nm), which are attributed to the heterogeneous geometry of the gain material, the optimized etching technique, and the strong overlap of the gain material with the plasmonic modes. Most importantly, we establish the connection between mode confinements and enhanced absorption and stimulated emission, which play a critical role in maintaining low lasing thresholds at extremely small hybrid plasmonic cavities. Our results pave the way for the further integration of dense arrays of hybrid plasmonic lasers with optical and electronic technology platforms.

cond-mat.mes-hall

Issues related to the usage of nitrogen as carrier gas for the MOVPE growth of GaSb/InAs heterostructures on InAs pseudosubstrates

GaSb/InAs/GaSb layer stacks have been grown on InAs metamorphic substrates (pseudosubstrates) by MOVPE, using nitrogen as major carrier gas. We demonstrate that GaSb growth by nitrogen MOVPE on InAs metamorphic substrates (and on InAs wafers) is possible in a very narrow range of growth parameters. As demonstrators, GaSb/InAs/GaSb structures were grown for electron mobility tests, obtaining (unintentional) 2D electron gas densities in the order of 9/5x10e12 cm(e-2) and mobilities up to 1.2/1.8x10e4 cm(e2)/Vs at room and liquid nitrogen temperature respectively. We show that it is beneficial to have some hydrogen in the carrier gas mixture for GaSb growth to achieve good crystal quality, morphology and electrical properties. Furthermore, an unexpected and previously unreported decomposition process of GaSb is observed at relatively low growth temperatures under the supply of the precursors for InAs epitaxial overgrowth. This nevertheless gets suppressed at even lower growth temperatures.

cond-mat.mtrl-sci

Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates

We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model, based on a set of coupled reaction-diffusion equations, one for each facet in the system, accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature, concentration, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In$_{0.12}$Ga$_{0.88}$As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In$_{0.25}$Ga$_{0.75}$As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation.

cond-mat.mtrl-sci

Single pairs of time-bin entangled photons

Time-bin entangled photons are ideal for long-distance quantum communication via optical fibers. Here we present a source where, even at high creation rates, each excitation pulse generates at most one time-bin entangled pair. This is important for the accuracy and security of quantum communication. Our site-controlled quantum dot generates single polarization-entangled photon pairs, which are then converted, without loss of entanglement strength, into single time-bin entangled photon pairs.

quant-ph

Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE

We demonstrate an atomic force microscopy based method for estimation of defect density by identification of threading dislocations on a non-flat surface resulting from metamorphic growth. The discussed technique can be applied as an everyday evaluation tool for the quality of epitaxial structures and allow for cost reduction, as it lessens the amount of the transmission electron microscopy analysis required at the early stages of projects. Metamorphic structures with low surface defectivities (below 106) were developed successfully with the application of the technique, proving its usefulness in process optimisation.

cond-mat.mtrl-sci