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Emil Chiglintsev

Publications and source records attributed to Emil Chiglintsev.

2 recordsLinked to original sources

Optical probing of Wigner crystallization in monolayer WSe$_2$ via diffraction of longitudinal excitons

Monolayer transition metal dichalcogenides (TMDs) are characterized by relatively large carrier effective masses and suppressed screening of the Coulomb interaction, which substantially enhances the correlation effects in these structures. The direct band gap allows to effectively optically probe these correlations. Here, we present an experimental observation of Wigner crystallization in monolayer $\mathrm{WSe}_2$ probed by the measurement of the exciton diffraction on the Wigner crystal (WC) periodic potential. We observe the formation of the WC phase in the absence of external magnetic fields at temperature range $T<26~\mathrm{K}$ and carrier concentrations $n$ $<2\times10^{11}~\mathrm{cm}^{-2}$. The direct observation of the exciton diffraction is enabled by the strong exciton longitudinal-transverse splitting induced by the long-range intervalley exchange interaction, leading to the large detuning between main exciton peak and first diffraction peak. Our findings highlight that the valley degree of freedom of charge carriers in TMDs facilitates optical probing of correlated electron phases in these structures.

cond-mat.mes-hall

Influence of oxygen-defects on intraband terahertz conductivity of carbon nanotubes

The exceptional charge transport properties of single-walled carbon nanotubes (SWCNTs) enable numerous ultrafast optoelectronic applications. Modifying SWCNTs by introducing defects significantly impacts the performance of nanotube-based devices, making defect characterization crucial. This research tracked these effects in oxygen plasma-treated SWCNT thin films. Sub-picosecond electric fields of varying strengths and additional photoexcitation were used to assess how defects influence charge carrier transport. Changes in effective conductivity within the terahertz (THz) range were found to be strongly dependent on impurity levels. The plasmon resonance shift to higher THz frequencies aligns with the defect-induced reduction in conductivity and slowed carrier migration within the network. An increase in THz field strength resulted in diminished conductivity due to intraband absorption bleaching. To address the emergence of hot charge carriers, a modified Drude model, which considers non-equilibrium charge carrier distribution via fielddependent scattering rates, was applied. The dominant charge-impurity scattering rate in plasma-treated samples corresponded with an increase in defects. Additionally, the impact of defects on charge carrier dynamics on a picosecond timescale was examined. The modeled plasma-treated SWCNTs wire-grid polarizer for the THz range reveals the potential for multi-level engineering of THz devices to customize properties through controlled defect populations.

cond-mat.mtrl-sci