Emila Panda | Searcharxiv

arXiv2022

Electronic structure and effective mass analysis of doped TiO$_2$ (anatase) systems using DFT+$U$

In this work, electronic structure of several doped TiO$_2$ anatase systems is computed using DFT+$U$. Effective masses of charge carriers are also computed to quantify how the dopant atoms perturb the bands of the host anatase material. $U$ is computed systematically for all the dopants using the linear response method rather than using fitting procedures to physically known quantities. A combination of $d$ and $f$ block elements (Nb, Ta, V, Mo, W, Cr, La, Cu, Co and Ce) are considered as dopants. Depending upon the energies of their outer $d$ or $f$ electrons, the dopants are found to form defect states at various positions in the band structure of host anatase system. Some dopants like Cr, Mo etc. form mid-gap states, which could reduce transparency. Other dopants like Nb, Ta and W are found to have the Fermi levels positioned near the conduction band edge, indicating these systems to exhibit $n$-type conductivity. From the effective mass analysis, dopants are found to increase the effective mass of charge carriers and the non-parabolic nature of bands. Based on electronic structure and effective mass analysis, Nb, Ta and W are identified to exhibit higher transparency and conductivity as compared to the other dopants considered here. The theoretical results presented here, increase our understanding and show the potential of dopants to alter the properties in anatase TiO$_2$.

cond-mat.mtrl-sci↗

arXiv2020

Intrinsic Electronic Defect States of Anatase using Density Functional Theory

In this work an overall electronic structure including the position and formation energies of various intrinsic defects are computed for anatase using Density Functional Theory aided by Hubbard correction (DFT+U). The intrinsic point defects considered here are, oxygen vacancy ($V_O$), oxygen interstitial ($O_i$), titanium vacancy ($V_{Ti}$) and titanium interstitial ($Ti_i$). Out of all the intrinsic defects considered here, $V_{Ti}$ and $Ti_i$ are found to be most stable under equilibrium condition. Whereas, conduction band in anatase is consisted of mainly Ti 3d with a minor component of O 2p states, valence band is found to be mainly composed of O 2p with a minor contribution from Ti 3d states. $V_O$ and $Ti_i$ are found to form localized states in the band gap. Moreover, anisotropy in the effective mass is seen. Finally, an alignment of band diagrams for all the intrinsic defect states is performed using vacuum potential from slab-supercell calculation as reference. This first principle study would help in the understanding of defect-induced insulating to conducting transition in anatase, which would have significant impact in the photocatalytic and optoelectronic area.

cond-mat.mtrl-sci↗