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Emmanuel Lhuillier

Publications and source records attributed to Emmanuel Lhuillier.

30 records · Page 2Linked to original sources
arXiv2019

Transport and Phototransport in ITO Nanocrystals with Short to Long-Wave Infrared Absorption

Nanocrystals are often described as an interesting strategy for the design of low-cost optoelectronic devices especially in the infrared range. However the driving materials reaching infrared absorption are generally heavy metalcontaining (Pb and Hg) with a high toxicity. An alternative strategy to achieve infrared transition is the use of doped semiconductors presenting intraband or plasmonic transition in the short, mid and long-wave infrared. This strategy may offer more flexibility regarding the range of possible candidate materials. In particular, significant progresses have been achieved for the synthesis of doped oxides and for the control of their doping magnitude. Among them, tin doped indium oxide (ITO) is the one providing the broadest spectral tunability. Here we test the potential of such ITO nanoparticles for photoconduction in the infrared. We demonstrate that In2O3 nanoparticles presents an intraband absorption in the mid infrared range which is transformed into a plasmonic feature as doping is introduced. We have determined the cross section associated with the plasmonic transition to be in the 1-3x10-13 cm2 range. We have observed that the nanocrystals can be made conductive and photoconductive due to a ligand exchange using a short carboxylic acid, leading to a dark conduction with n-type character. We bring further evidence that the observed photoresponse in the infrared is the result of a bolometric effect.

physics.app-ph↗
arXiv2018

Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures

Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements (ARPES) and Density Functional Theory (DFT) calculations. The results show good electronic properties as well as well-defined band arising from the strong splitting of the single layer WS2 valence band at K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single layer WS2. . Our results provide an important reference for future studies of electronic properties of WS2 and its applications in valleytronic devices.

cond-mat.mtrl-sci↗
arXiv2018

Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)

Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed; which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and -0.51 eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV.

cond-mat.mtrl-sci↗
arXiv2017

Transport in a Single Self-Doped Nanocrystal

Addressing the optical properties of a single nanoparticle in the infrared is particularly challenging, thus alternative methods for characterizing the conductance spectrum of nanoparticles in this spectral range need to be developed. Here we describe an efficient method of fabricating single nanoparticle tunnel junctions on a chip circuit. We apply this method to narrow band gap nanoparticles of HgSe, which band structure combine the inverted character of the bulk semimetal with quantum confinement and self-doping. Upon tuning the gate bias, measurement reveals the presence of two energy gaps in the spectrum. The wider gap results from the interband gap, while the narrower gap results from intraband transitions. The observation of the latter near zero gate voltage confirms the doped character of the nanoparticle at the single particle level, which is in full agreement with the ensemble optical and transport measurements. Finally we probe the phototransport within a single quantum dot and demonstrate a large photogain mechanism resulting from photogating.

cond-mat.mes-hall↗
arXiv2016

Correlated spontaneous emission of fluorescent emitters mediated by single plasmons

Manipulating the spontaneous emission of a fluorescent emitter can be achieved by placing the emitter in a nanostructured environment. A privileged spot is occupied by plasmonic structures that provide a strong confinement of the electromagnetic field, which results in an enhancement of the emitter-environment interaction. While plasmonic nanostructures have been widely exploited to control the emission properties of single photon emitters, performing the coupling between quantum emitters with plasmons poses a huge challenge. In this Letter we report on a first crucial step towards this goal by the observation of correlated emission between a single CdSe/CdS/ZnS quantum dot exhibiting single photon statistics and a fluorescent nanobead located micrometers apart. This is accomplished by coupling both emitters to a silver nanowire. Single-plasmons are created on the latter from the quantum dot, and transfer energy to excite in turn the fluorescent nanobead.

physics.optics↗
arXiv2012

Transport properties of mid-infrared colloidal quantum dot films

The transport and thermal properties of HgTe colloidal quantum dot films with cut-off wavelengths in the mid-IR are investigated. The cut-off wavelength of this material can be tuned over the 3-5 μm range, which makes it a promising alternative to existing high cost detectors. Post deposition processes such as ligand exchange and atomic layer deposition are investigated as a way to increase the carrier mobility.

cond-mat.mes-hall↗
arXiv2010

Transport Electronique Dans Les Super Reseaux : Applications Aux Détecteurs Infrarouges à Grandes Longueur D'onde

The low flux infrared imaging needs performant high wavelength detectors. Quantum Well Infrared Photodetectors (QWIP), thanks to the maturity of GaAs, the possibility to adjust the detected wavelength on a large range and to realize large uniform matrix are good candidate for such applications. In order to validate this interest, we have performed an electro-optic characterization of a 15μm sample. These measurements have been used to simulate the performance of a camera based on this QWIP and used in a low infrared photons flux scenario. We predict that this QWIP would succeed. Nevertheless these simulations also underline the detrimental role of the dark current. Thus we have developed a simulation tool based on a hoping approach between localized states, which provide us a better understanding of the transport in these heterostructures. The code has in particular underlines the role plays by the electron -ionized impurities interaction, which make the dark current very sensitive to the doping profile. Using this tool we have designed new structures, with optimized doping profile, in which the scattering rate has been decreased by a factor two. Moreover we have identified a quantum origin to the plateau shape of the I(V) curve. This code is more generally a useful simulation tool for the transport in hétérostructures. The influence of growth defects (non ideal interface and disorder) has been quantized and we have performed the first evaluation of The R0A in a THz QCD. Finally non local transport effects have been investigated. Saw teeth observation on the I(V) curves have been modeled and their influence on the detectivty estimated.

cond-mat.mtrl-sci↗
arXiv2010

Quantum scattering engineering for the reduction of dark current in very long wavelength quantum well infrared photodetector

Dark current is shown to be significantly reduced in quantum well infrared photodetectors in the tunneling regime, i.e. at very low temperature, by shifting the dopant impurity layers away from the central part of the wells. This result confirms that the interwell tunneling current is dominated by charged impurity scattering in usual structures. The experimental results are in good quantitative agreement with the proposed theory. This dark current reduction is pushing further the ultimate performances of quantum well infrared photodetectors for the detection of low infrared photon fluxes. Routes to further improvements are briefly sketched.

cond-mat.mtrl-sci↗
arXiv2010

Quantum well infrared photodetectors hardiness to the non ideality of the energy band profile

We report results on the effect of a non-sharp and disordered potential in Quantum Well Infrared Photodetectors (QWIP). Scanning electronic transmission microscopy is used to measure the alloy profile of the structure which is shown to present a gradient of composition along the growth axis. Those measurements are used as inputs to quantify the effect on the detector performance (peak wavelength, spectral broadening and dark current). The influence of the random positioning of the doping is also studied. Finally we demonstrate that QWIP properties are quite robust with regard to the non ideality of the energy band profile.

cond-mat.mes-hall↗
arXiv2010

15μm Quantum well infrared photodetector for thermometric imagery in cryogenic windtunnel

Quantum Well Infrared Photodetector (QWIP) usually suffer from a too moderate quantum efficiency and too large dark current which is often announced as crippling for low flux applications. Despite this reputation we demonstrate the ability of QWIP for the low infrared photon flux detection. We present the characterization of a state of the art 14.5μm QWIP from Alcatel-Thales 3-5 Lab. We developed a predictive model of the performance of an infrared instrument for a given application. The considered scene is a Cryogenic Wind Tunnel (ETW), where a specific Si:Ga camera is currently used. Using this simulation tool we demonstrate the QWIP ability to image a low temperature scene in this scenario. QWIP detector is able to operate at 30K with a NETD as low as 130mK. In comparison to the current detector, the temperature of use is three times higher and the use of a QWIP based camera would allow a huge simplification of the optical part.

physics.optics↗
arXiv2009

Interface roughness transport in THz quantum cascade detectors

Infrared Detectors based on a Quantum Cascade have been proposed to suppress the dark current which is identified as a limiting factor in Quantum Well Infrared Photodetectors. Those detectors have been mostly designed for the 3-5um and 8-12um range of wavelength. For detector operating in the THz range a complete change of regime of transport is expected since the photon energy is lower than the Longitudinal Optical (LO) phonon energy. Using a two dimensional code of transport we have identified Interface Roughness (IR) as the key interaction in such a structure. We have used scanning transmission electron microscopy (STEM) to evaluate the IR parameters (magnitude of the roughness and mean distance between defects) instead of the classical mobility measurements. Finally, we used these parameters to study their influence on the resistance of the device.

cond-mat.mes-hall↗