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Enesio Marinho Jr.

Publications and source records attributed to Enesio Marinho Jr..

3 recordsLinked to original sources

Exciton dynamics and high-temperature excitonic superfluidity in S-doped graphyne

S-doped graphyne (S-GY) is a recently synthesized two-dimensional graphyne-based carbon allotrope that provides a promising platform for exciton engineering and coherent many-body phases. Here, we investigate the quasiparticle electronic structure, optical response, and exciton dynamics of monolayer S-GY using the G$_0$W$_0$ approximation and the Bethe--Salpeter equation (BSE). Quasiparticle corrections increase the fundamental band gap from $0.88\,\text{eV}$ (PBE) to $1.95\,\text{eV}$, while slightly reducing the carrier effective masses. The BSE optical response reveals strongly bound excitons, with the lowest bright exciton exhibiting a binding energy of $0.72\,\text{eV}$, as well as a nearly degenerate dark exciton within the thermal energy scale. Analysis of exciton wavefunctions in reciprocal space confirms a hydrogenic Rydberg series with well-defined angular-momentum character, and radiative lifetimes in the nanosecond range at room temperature, comparable to those in transition-metal dichalcogenide monolayers. Finally, we construct the excitonic phase diagram and estimate a crossover density of $\sim6 \times10^{12}~\text{cm}^{-2}$, below which the exciton gas behaves as a dilute Bose system, and the Berezinskii--Kosterlitz--Thouless (BKT) superfluid phase becomes accessible. We estimate a maximum BKT transition temperature of $\sim 143\,\text{K}$ in the freestanding limit for the 1s exciton, indicating that monolayer S-GY may provide favorable conditions for high-temperature excitonic superfluidity in graphyne-based materials.

cond-mat.mtrl-sci

Photovoltaic efficiency of transition metal dichalcogenides thin films by ab initio excited-state methods

Transition metal dichalcogenides (TMDCs) have garnered significant interest in optoelectronics, owing to their scalability and thickness-dependent electrical and optical properties. In particular, thin films of TMDCs could be used in photovoltaic devices. In this work, we employ $ab$ $initio$ many-body perturbation theory within $G_0W_0$-BSE approach to accurately compute the optoelectronic properties of thin films of 2H-TMDCs composed of Mo, W, S, and Se. Subsequently, we evaluate their photovoltaic performance including exciton recombination effects, and show this is a key ingredient. We obtain efficiencies of up to 29\% for a 200-nm thick film of \ce{WSe2}, thus providing an upper limit. We also include other \textcolor{black}{phenomenological} recombination mechanisms that could be present in current samples. This slightly reduces efficiencies, indicating that even with current synthesis technologies, there is still potential for further enhancement of TMDCs' performance in photovoltaic applications.

cond-mat.mtrl-sci

Many-body effects on the quasiparticle band structure and optical response of single-layer penta-NiN$_2$

We present a comprehensive first-principles study on the optoelectronic properties of the single-layer nickel diazenide (penta-NiN$_2$), a recently synthesized Cairo pentagonal 2D semiconductor. We carry out $ab$ $initio$ calculations based on the density-functional theory (DFT) and many-body perturbation theory, within the framework of Green's functions, to describe the quasiparticle properties and analyze the excitonic effects on the optical properties of monolayer penta-NiN$_2$. Our results reveal a quasiparticle band gap of approximately 1 eV within the eigenvalue self-consistent $GW$ approach, corroborating the monolayer penta-NiN$_2$'s potential in optoelectronics. Remarkably, the acoustic phonon-limited carrier mobility for the monolayer penta-NiN$_2$ exhibits an ultra-high hole mobility of $84{\times}10^4$ cm$^2$/V$\cdot$s. Furthermore, our findings indicate that the material's band gap exhibits an anomalous negative dependence on temperature. Despite being a two-dimensional material, monolayer penta-NiN$_2$ presents resonant excitons in its most prominent absorption peak. Therefore, penta-NiN$_2$ boasts compelling and promising properties that merit exploration in optoelectronics and high-speed devices.

cond-mat.mtrl-sci