arXiv subjects

Enrique Colomés

Publications and source records attributed to Enrique Colomés.

7 recordsLinked to original sources

arXiv2020

Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices

To manufacture faster electron devices, the industry has entered into the nanoscale dimensions and Terahertz (THz) working frequencies. The discrete nature of the few electrons present simultaneously in the active region of ultra-small devices generate unavoidable fluctuations of the current at THz frequencies. The consequences of this noise remain unnoticed in the scientific community because its accurate understanding requires dealing with consecutive multi-time quantum measurements. Here, a modeling of the quantum measurement of the current at THz frequencies is introduced in terms of quantum (Bohmian) trajectories. With this new understanding, we develop an analytic model for THz noise as a function of the electron transit time and the sampling integration time, which finally determine the maximum device working frequency. The model is confirmed by either semi-classical or full-quantum time-dependent Monte Carlo simulations. All these results show that intrinsic THz noise increases unlimitedly when the volume of the active region decreases. All attempts to minimize the low signal-to-noise ratio of these ultra-small devices to get effective THz working frequencies are incompatible with the basic elements of the scaling strategy. One can develop THz electron devices, but they cannot have ultra-small dimensions. Or, one can fabricate ultra-small electron devices, but they cannot be used for THz working frequencies.

cond-mat.mes-hall↗

arXiv2019

Stochastic Schrödinger equations and conditional states: a general Non-Markovian quantum electron transport simulator for THz electronics

A prominent tool to study the dynamics of open quantum systems is the reduced density matrix. Yet, approaching open quantum systems by means of state vectors has well known computational advantages. In this respect, the physical meaning of the so-called conditional states in Markovian and non-Markovian scenarios has been a topic of recent debate in the construction of stochastic Schrödinger equations. We shed light on this discussion by acknowledging the Bohmian conditional wavefunction as the proper mathematical object to represent, in terms of state vectors, an arbitrary subset of degrees of freedom. As an example of the practical utility of these states, we present a time-dependent quantum Monte Carlo algorithm to describe electron transport in open quantum systems under general (Markovian or non-Markovian) conditions. By making the most of trajectory-based and wavefunction methods, the resulting simulation technique extends, to the quantum regime, the computational capabilities that the Monte Carlo solution of the Boltzmann transport equation offers for semi-classical electron devices.

cond-mat.mes-hall↗

arXiv2019

Quantum time-dependent Monte Carlo simulation of electron devices with 2D linear-band materials: a genuine TeraHertz signature for graphene

An intrinsic electron injection model for linear band two-dimensional (2D) materials, like graphene, is presented and its coupling to a recently developed quantum time-dependent Monte Carlo simulator for electron devices, based on the use of stochastic Bohmian conditional wave functions, is explained. The simulator is able to capture the full (DC, AC, transient and noise) performance of 2D electron devices. In particular, we demonstrate that the injection of electrons with positive and negative kinetic energies is mandatory when investigating high frequency performance of linear band materials with Klein tunneling, while traditional models dealing with holes (defined as the lack of electrons) can lead to unphysical results. We show that the number of injected electrons is bias-dependent, implying that an extra charge is required to get self-consistent results. Interestingly, we provide a successful comparison with experimental DC data. Finally, we predict that a genuine high-frequency signature due to a roughly constant electron injection rate in 2D linear band electron devices (which is missing in 2D parabolic band ones) can be used as a band structure tester.

cond-mat.mes-hall↗

arXiv2019

Implications of the Klein tunneling times on high frequency graphene devices using Bohmian trajectories

Because of its large Fermi velocity, leading to a great mobility, graphene is expected to play an important role in (small signal) radio frequency electronics. Among other, graphene devices based on Klein tunneling phenomena are already envisioned. The connection between the Klein tunneling times of electrons and cut-off frequencies of graphene devices is not obvious. We argue in this paper that the trajectory-based Bohmian approach gives a very natural framework to quantify Klein tunneling times in linear band graphene devices because of its ability to distinguish, not only between transmitted and reflected electrons, but also between reflected electrons that spend time in the barrier and those that do not. Without such distinction, typical expressions found in the literature to compute dwell times can give unphysical results when applied to predict cut-off frequencies. In particular, we study Klein tunneling times for electrons in a two-terminal graphene device constituted by a potential barrier between two metallic contacts. We show that for a zero incident angle (and positive or negative kinetic energy), the transmission coefficient is equal to one, and the dwell time is roughly equal to the barrier distance divided by the Fermi velocity. For electrons incident with a non-zero angle smaller than the critical angle, the transmission coefficient decreases and dwell time can still be easily predicted in the Bohmian framework. The main conclusion of this work is that, contrary to tunneling devices with parabolic bands, the high graphene mobility is roughly independent of the presence of Klein tunneling phenomena in the active device region.

cond-mat.mes-hall↗

arXiv2017

Limitations of the intrinsic cut-off frequency to correctly quantify the speed of nanoscale transistors

The definition of the intrinsic cut-off frequency ($f_T$) based on the current gain equals to one (0 dB) is critically analyzed. A condition for the validity of the quasi-static estimation of $f_T$ is established in terms of the temporal variations of the electric charge and electric flux on the drain, source and gate terminals. Due to the displacement current, an electron traversing the channel length generates a current pulse of finite temporal width. For electron devices where the intrinsic delay time of the current after a transient perturbation is comparable to such width, the displacement currents cannot be neglected and the quasi-static approximation becomes inaccurate. We provide numerical results for some ballistic transistors where the estimation of $f_T$ under the quasi-static approximation can be one order of magnitude larger than predictions obtained from a time-dependent numerical simulations of the intrinsic delay time (including particle and displacement currents). In other ballistic transistors, we show that the gate current phasor can be smaller than the drain one at all frequencies, giving no finite value for $f_T$.

cond-mat.mes-hall↗

arXiv2015

Quantum noise with exchange and tunneling: Predictions for a two-particle scattering experiment with time-dependent oscillatory potentials

Quantum noise with exchange and tunneling is studied within time-dependent wave packets. A novel expression for the quantum noise of two identical particles injected simultaneously from opposite sides of a tunneling barrier is presented. Such quantum noise expression provides a physical (non-spurious) explanation for the experimental detection of two electrons at the same side under static potentials. Numerical simulations of the two-particle scattering probabilities in a double barrier potential with an oscillatory well are performed. The dependence of the quantum noise on the electron energy and oscillatory frequency are analyzed. The peculiar behaviour of the dependence of the quantum noise on such parameters is proposed as a test about the soundness of this novel quantum noise expression, for either static or oscillatory potentials.

quant-ph↗

arXiv2015

Quantum Noise from a Bohmian perspective: fundamental understanding and practical computation in electron devices

In the literature, the study of electron transport in quantum devices is mainly devoted to DC properties. The fluctuations of the electrical current around these DC values, the so-called quantum noise, are much less analyzed. The computation of quantum noise is intrinsically linked (by temporal correlations) to our ability to understand/compute the time-evolution of a quantum system that is measured several times. There are several quantum theories that provide different (but empirically equivalent) ways of understanding/computing the perturbation of the wave function when it is measured. In this work, quantum noise associated to an electron impinging upon a semitransparent barrier is explained using Bohmian mechanics (which deals with wave functions and point-like particles). From this result, the fundamental understanding and practical computation of quantum noise with Bohmian trajectories are discussed. Numerical simulations of low and high frequency features of quantum shot noise in a resonant tunneling diode are presented (through the BITLLES simulator), showing the usefulness of the Bohmian approach.

quant-ph↗