arXiv subjects

Enrique Guerrero

Publications and source records attributed to Enrique Guerrero.

7 recordsLinked to original sources

arXiv2024

Development and Application of a ReaxFF Reactive Force Field for Ni-Doped MoS$_2$

The properties of $\mathrm{MoS_2}$ can be tuned or optimized through doping. In particular, Ni doping has been shown to improve the performance of $\mathrm{MoS_2}$ for various applications, including catalysis and tribology. To enable investigation of Ni-doped $\mathrm{MoS_2}$ with reactive molecular dynamics simulations, we developed a new ReaxFF force field to describe this material. The force field parameters were optimized to match a large set of density-functional theory (DFT) calculations of 2H-$\mathrm{MoS_2}$ doped with Ni, at four different sites (Mo-substituted, S-substituted, octahedral intercalation, and tetrahedral intercalation), under uniaxial, biaxial, triaxial, and shear strain. The force field was evaluated by comparing ReaxFF- and DFT-relaxed structural parameters, the tetrahedral/octahedral energy difference in doped 2H, energies of doped 1H and 1T monolayers, and doped 2H structures with vacancies. We demonstrated the application of the force field with reactive simulations of sputtering deposition and annealing of Ni-doped $\mathrm{MoS_2}$ films. Results show that the developed force field can successfully model the phase transition of Ni-doped $\mathrm{MoS_2}$ from amorphous to crystalline. The newly developed force field can be used in subsequent investigations to study the properties and behavior of Ni-doped $\mathrm{MoS_2}$ using reactive molecular dynamics simulations.

cond-mat.mtrl-sci↗

arXiv2022

Structure, Thermodynamics, and Raman Spectroscopy of Rhenium-Doped Bulk MoS$_2$ from First Principles

Doping MoS$_2$ with Re is known to alter the electronic, structural, and tribological properties. Re-doped MoS$_2$ has been previously mainly studied in monolayer or few-layer form, but can also be relevant for applications in many-layer or bulk form. In this work, we use density functional theory to explore the structure, phase stability, and Raman spectrum of bulk Re-doped MoS$_2$. We consider the possibility of the Re dopant existing at different locations and provide experimentally distinguishable characteristics of the most likely sites: Mo-substitution and tetrahedral (t-) intercalation. We demonstrate and benchmark a general approach to calculate Raman spectra of doped materials with metallic densities of states by using atomic Raman tensors from the pristine material. Applying this method to the metallic Re-doped structures, we find characteristic shifts in the Raman-active peaks depending on Re dopant position: redshifts in both A$_{\rm 1g}$ and E$_{\rm 2g}^1$ peaks in the t-intercalated case versus a redshift for A$_{\rm 1g}$ and blueshift (sometimes accompanied by a smaller redshifted peak) for E$_{\rm 2g}^1$ peaks in the Mo-substituted case, which can be used to identify the dopant sites in experimental samples. We analyze the interactions giving rise to these shifts.

cond-mat.mtrl-sci↗

arXiv2022

Atomistic Mechanisms of Sliding in Few-Layer and Bulk Doped MoS$_2$

Sliding of two-dimensional materials is critical for their application as solid lubricants for space, and also relevant for strain engineering and device fabrication. Dopants such as Ni surprisingly improve lubrication in MoS$_2$, despite formation of interlayer bonds by intercalated Ni, and the mechanism has remained unclear. While sliding on the atomistic level has been theoretically investigated in pristine 2D materials, there has been little work on doped forms, especially for the complicated case of intercalation. We use density functional theory to study sliding of Ni-doped MoS$_2$, considering Mo/S substitution and octahedral/tetrahedral intercalation. We find that bulk and trilayers are well described by pairwise bilayer interactions. Tetrahedral intercalation between layers dramatically increases their sliding barrier, but minimally affects sliding between adjacent undoped layers, thus preserving effective lubrication. We provide an atomistic view of how sliding occurs in doped transition-metal dichalcogenides, and a general methodology to analyze doped sliding.

cond-mat.mtrl-sci↗

arXiv2022

Intercalation Leads to Inverse Layer Dependence of Friction on Chemically Doped MoS_{2}

We present results of atomic-force-microscopy-based friction measurements on Re-doped molybdenum disulfide (MoS2). In stark contrast to the widespread observation of decreasing friction with increasing number of layers on two-dimensional (2D) materials, friction on Re-doped MoS2 exhibits an anomalous, i.e., inverse dependence on the number of layers. Raman spectroscopy measurements combined with ab initio calculations reveal signatures of Re intercalation. Calculations suggest an increase in out-of-plane stiffness that inversely correlates with the number of layers as the physical mechanism behind this remarkable observation, revealing a distinctive regime of puckering for 2D materials.

cond-mat.mtrl-sci↗

arXiv2021

Enhanced interlayer interactions in Ni-doped MoS$_2$, and structural and electronic signatures of doping site

The crystal structure of MoS$_2$ with strong covalent bonds in plane and weak Van der Waals interactions out of plane gives rise to interesting properties for applications such as solid lubrication, optoelectronics, and catalysis, which can be enhanced by transition-metal doping. However, the mechanisms for improvement and even the structure of the doped material can be unclear, which we address with theoretical calculations. Building on our previous work on Ni-doping of the bulk 2H phase, now we compare to polytypes (1H monolayer and 3R bulk), to determine favorable sites for Ni and the doping effect on structure, electronic properties, and the layer dissociation energy. The most favorable intercalation/adatom sites are tetrahedral intercalation for 3R (like 2H) and Mo-atop for 1H. The relative energies indicate a possibility of phase change from 2H to 3R with substitution of Mo or S. We find structural and electronic properties that can be used to identify the doping sites, including metallic behavior in Mo-substituted 3R and 2H, and in-gap states for Mo- and S-substituted 1H, which could have interesting optoelectronic applications. We observe a large enhancement in the interlayer interactions of Ni-doped MoS$_2$, opposite to the effect of other transition metals. For lubrication applications, this increased layer dissociation energy could be the mechanism of low wear. Our systematic study shows the effect of doping concentration and we extrapolate to the low-doping limit. This work gives insight into the previously unclear structure of Ni-doped MoS$_2$ and how it can be detected experimentally, the relation of energy and structures of doped monolayers and bulk systems, the electronic properties under doping, and the effect of doping on interlayer interactions.

cond-mat.mtrl-sci↗

arXiv2021

Phase Stability and Raman/IR Signatures of Ni-Doped MoS$_2$ from Density-Functional Theory Studies

Ni-doped MoS$_2$ is a layered material with useful tribological, optoelectronic, and catalytic properties. Experiment and theory on doped MoS$_2$ has focused mostly on monolayers or finite particles: theoretical studies of bulk Ni-doped MoS$_2$ are lacking and the mechanisms by which Ni alters bulk properties are largely unsettled. We use density functional theory calculations to determine the structure, mechanical properties, electronic properties, and formation energies of bulk Ni-doped 2H-MoS$_2$ as a function of doping concentration. We find four meta-stable structures: Mo or S substitution, and tetrahedral (t-) or octahedral (o-) intercalation. We compute phase diagrams as a function of chemical potential to guide experimental synthesis. A convex hull analysis shows that t-intercalation (favored over o-intercalation) is quite stable against phase segregation and in comparison with other compounds containing Ni, Mo, and S; the doping formation energy is around 0.1 meV/atom. Intercalation forms strong interlayer covalent bonds and does not increase the $c$-parameter. Ni-doping creates new states in the electronic density of states in MoS$_2$ and shifts the Fermi level, which are of interest for tuning the electronic and optical properties. We calculate the infrared and Raman spectra and find new peaks and shifts in existing peaks that are unique to each dopant site, and therefore may be used to identify the site experimentally, which has been a challenge to do conclusively.

cond-mat.mtrl-sci↗

arXiv2020

Computational generation of voids in $a$-Si and $a$-Si:H by cavitation at low density

Use of amorphous silicon ($a$-Si) and hydrogenated amorphous silicon ($a$-Si:H) in photovoltaics has been limited by light-induced degradation (the Staebler-Wronski effect) and low hole mobilities, and voids have been implicated in both problems. Accurately modeling the void microstructure is critical to theoretically understanding the cause of these issues. Previous methods of modeling voids have involved removing atoms according to an {\it a priori} idea of void structure and/or using computationally expensive molecular dynamics. We propose a new fast and unbiased approach based on the established and efficient Wooten-Winer-Weaire (WWW) Monte Carlo method, by using a range of fixed densities to generate equilibrium structures of $a$-Si and $a$-Si:H that maintain 4-coordination. We find a smooth evolution in bond lengths, bond angles, and bond angle deviations $Δθ$ as the density is changed around the equilibrium value of $4.9\times10^{22}\ $atoms/cm$^3$. However, a significant change occurs at densities below $4.3\times10^{22}\ $atoms/cm$^3$, where voids begin to form to relieve tensile stress, akin to a cavitation process in liquids. We find both small voids (radius $\sim$3 Å) and larger ones (up to 7 Å), which compare well with available experimental data. The voids have an influence on atomic structure up to 4 Åbeyond the void surface and are associated with decreasing structural order, measured by $Δθ$. We also observe an increasing medium-range dihedral order with increasing density. Our method allows fast generation of statistical ensembles, resembles a physical process during experimental deposition, and provides a set of void structures for further studies of their effects on degradation, hole mobility, two-level systems, thermal transport, and elastic properties.

cond-mat.mtrl-sci↗