arXiv subjects

Enting Li

Publications and source records attributed to Enting Li.

4 recordsLinked to original sources

arXiv2025

Quasi-steady electron-excitonic complexes coupling in a two-dimensional semiconductor

Excitons and their complexes govern optical-related behaviors in semiconductors. Here, using angle-resolved photoemission spectroscopy (ARPES), we have elucidated the light-matter interaction mediated by quasi-steady excitonic complexes within a monolayer of the prototypical two-dimensional (2D) semiconductor WSe2. Under continuous incident light, we have observed the generation of quasi-steady excitons and their complexes, encompassing ground and excited state excitons, trions, as well as their intricate interplay. We further show spectral evidence of electronic excitation states within the background of quasi-steady excitonic complexes, characterized by valence band (VB) effective mass renormalization, the enhanced spin-orbit coupling (SOC), the formation of an excitonic gap near the Fermi level (EF ) of the conduction band (CB), and intervalley excitonic band folding. Our findings not only unveil a quasi-steady excitonic complex background for the creation of diverse electronic excitations in 2D semiconductors but also offer new insights into the role of excitons in the charge density wave (CDW) formation mechanism and facilitate the advancement of correlated electronic state engineering based on the coupling between electrons and excitonic complexes in a quasi-equilibrium state.

cond-mat.str-el↗

arXiv2025

Surface band-selective moir\'e effect induces flat band in mixed-dimensional heterostructures

In this work, we reveal a curious type of moir\'e effect that selectively modifies the surface states of bulk crystal. We synthesize mixed-dimensional heterostructures consisting of a noble gas monolayer grow on the surface of bulk Bi(111), and determine the electronic structure of the heterostructures using angle-resolved photoemission spectroscopy. We directly observe moir\'e replicas of the Bi(111) surface states, while the bulk states remain barely changed. Meanwhile, we achieve control over the moir\'e period in the range of 25 {\AA} to 80 {\AA} by selecting monolayers of different noble gases and adjusting the annealing temperature. At large moir\'e periods, we observe hybridization between the surface band replicas, which leads to the formation of a correlated flat band. Our results serve as a bridge for understanding the moir\'e modulation effect from 2D to 3D systems, and provide a feasible approach for the realization of correlated phenomena through the engineering of surface states via moir\'e effects.

cond-mat.str-el↗

arXiv2025

Sensitive infrared surface photovoltage in quasi-equilibrium in a layered semiconductor at low-intensity low-temperature condition

Benefit to layer-dependent bandgap, van der Waals materials with surface photovoltaic effect (SPV) enable photodetection over a tunable wavelength range with low power consumption. However, sensitive SPV in the infrared region, especially in a quasi-steady illumination condition, is still elusive in layered semiconductors. Here, using angle-resolved photoemission spectroscopy, we report a sensitive SPV in quasi-equilibrium in NbSi0.5Te2, with photoresponsivity up to 2.4*10^6 V/(W*cm^(-2)) at low intensity low temperature condition (LILT). The sensitive SPV is further confirmed by observing the Dember effect, where the photogenerated carrier density is high enough and diffusion currents suppress SPV. Temperature-dependent measurements indicate that intrinsic carriers freezing at low temperature leads to the ultrahigh photoresponse, while a small amount of photon-generated carriers in quasi-equilibrium dominate the system. Our work not only provides a promising layered semiconductor for Infrared optoelectronic devices with strong infrared SPV at LILT, which has application potential in fields such as quantum information and deep-space exploration, but also paves a novel way to enhance light-matter interaction effect by freezing bulk carriers.

cond-mat.mtrl-sci↗

arXiv2025

Observation of quasi-steady dark excitons and gap phase in a doped semiconductor

Exciton plays an important role in optics and optics-related behaviors and leads to novel correlated phases like charge order, exciton insulator, and exciton-polariton condensation. Dark exciton shows distinct properties from bright one. However, it cannot be directly detected by conventional optic measurements. The electronic modulation effect of dark excitons in quasi-equilibrium distribution, critical for electronic devices in working status, is still elusive. Here, using angle-resolved photoemission spectroscopy, we report creating, detecting, and controlling dark excitons in the quasi-equilibrium distribution in a doped semiconductor SnSe2. Surprisingly, we observe an excitonic gap phase, with a conduction band opening an anisotropic gap. Our results broaden the scope of dark excitons, extending their studies from the picosecond timescale in the ultrafast photoemission process to conditions occurring under quasi-equilibrium. We reveal the light-matter interaction in the engineering of electronic structures and provide a new way to realize the excitonic gap phase in semiconductors with large band gaps.

cond-mat.mtrl-sci↗