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Eran Lebanon

Publications and source records attributed to Eran Lebanon.

12 recordsLinked to original sources

Quantum criticality and the break-up of the Kondo pseudo-potential

We discuss how Anderson's ideas of nominal and real valence can be incorporated into the current discussion of heavy electron quantum criticality. In the heavy electron phase, the nominal valence of a screened magnetic ion differs from its real valence by one unit. We identify this discrepancy with the formation of a positively charged background we call the Kondo pseudo-potential. At the quantum critical point, the sudden collapse of the heavy electron Fermi surface can be identified with the return of the nominal to the real valence. This leads to the interesting idea that the heavy electron quantum critical point may involve locally critical charge degrees of freedom. We discuss how this might come about within a large N Schwinger boson scheme.

cond-mat.str-el

Fermi liquid identities for the Infinite U Anderson Model

We show how the electron gas methods of Luttinger, Ward and Nozières can be applied to the infinite U Anderson impurity model within a Schwinger boson treatment. Working to all orders in a 1/N expansion, we show how the Friedel Langreth relationship, the Yamada-Yosida-Yoshimori and the Shiba-Korringa relations can be derived, under the assumption that the spinon and holon fields are gapped. One of the remarkable features of this treatment, is that the Landau amplitudes depend on the exchange of low energy virtual spinons and holons. We end the paper with a discussion on the extension of our approach to the lattice, where the spinon-holon is expected to close at a quantum critical point.

cond-mat.str-el

Conserving many body approach to the fully screened, infinite U Anderson model

Using a Luttinger Ward scheme for interacting gauge particles, we present a conserving many body treatment of a family of fully screened infinite U Anderson models that has a smooth cross-over into the Fermi liquid state, with a finite scattering phase shift at zero temperature and a Wilson ratio greater than one. We illustrate our method, computing the temperature dependence of the thermodynamics, resistivity and electron dephasing rate and discuss its future application to non-equilibrium quantum dots and quantum critical mixed valent systems.

cond-mat.str-el

The Memory Effect in Electron Glasses

We present a theory for the memory effect in electron glasses. In fast gate voltage sweeps it is manifested as a dip in the conductivity around the equilibration gate voltage. We show that this feature, also known as anomalous field effect, arises from the long-time persistence of correlations in the electronic configuration. We argue that the gate voltage at which the memory dip saturates is related to an instability caused by the injection of a critical number of excess carriers. This saturation threshold naturally increases with temperature. On the other hand, we argue that the gate voltage beyond which memory is erased, is temperature independent. Using standard percolation arguments, we calculate the anomalous field effect as a function of gate voltage, temperature, carrier density and disorder. Our results are consistent with experiments, and in particular, they reproduce the observed scaling of the width of the memory dip with various parameters.

cond-mat.str-el

History dependence, memory and metastability in electron glasses

We discuss the history dependence and memory effects which are observed in the out-of-equilibrium conductivity of electron glasses. The experiments can be understood by assuming that the local density of states retains a memory of the sample history. We provide analytical arguments for the consistency of this assumption, and discuss the saturation of the memory effect with increasing gate voltage change. This picture is bolstered by numerical simulations at zero temperature, which moreover demonstrate the incompressibility of the Coulomb glass on short timescales.

cond-mat.dis-nn

Non Equilibrium Noise as a Probe of the Kondo Effect in Mesoscopic Wires

We study the non-equilibrium noise in mesoscopic diffusive wires hosting magnetic impurities. We find that the shot-noise to current ratio develops a peak at intermediate source-drain biases of the order of the Kondo temperature. The enhanced impurity contribution at intermediate biases is also manifested in the effective distribution. The predicted peak represents increased inelastic scattering rate at the non-equilibrium Kondo crossover.

cond-mat.mes-hall

Coulomb blockade and Non-Fermi-liquid behavior in quantum dots

The non-Fermi-liquid properties of an ultrasmall quantum dot coupled to a lead and to a quantum box are investigated. Tuning the ratio of the tunneling amplitudes to the lead and box, we find a line of two-channel Kondo fixed points for arbitrary Coulomb repulsion on the dot, governing the transition between two distinct Fermi-liquid regimes. The Fermi liquids are characterized by different values of the conductance. For an asymmetric dot, spin and charge degrees of freedom are entangled: a continuous transition from a spin to a charge two-channel Kondo effect evolves. The crossover temperature to the two-channel Kondo effect is greatly enhanced away from the local-moment regime, making this exotic effect accessible in realistic quantum-dot devices.

cond-mat.str-el

Coulomb blockade and Quantum Critical Points in Quantum Dots

An ultrasmall quantum dot coupled to a lead and to a quantum box (a large quantum dot) is investigated. Tuning the tunneling amplitudes to the lead and box, we find a line of unstable non-Fermi-liquid fixed points as function of the gate potentials of the quantum dots, extending to arbitrary charging energies on the small and large quantum dots. These quantum-critical fixed points possess a finite residual entropy. They govern the cross over from one Fermi-liquid regime to another, characterized by distinct (high and low) conductance values.

cond-mat.mes-hall

The Coulomb Blockade in Quantum Boxes

The charging of a quantum box connected to a lead by a single-mode point contact is solved for arbitrary temperatures, tunneling amplitudes, and gate voltages, using a variant of Wilson's numerical renormalization group. The charge inside the box and the capacitance of the junction are calculated on equal footing for all physical regimes, including weak tunneling, near perfect transmission, and the crossover regime in between. At the charge plateaus, perturbation theory is found to break down at fairly small tunneling amplitudes. Near perfect transmission, we confirm Matveev's scenario for the smearing of the Coulomb-blockade staircase. A surprising reentrance of the Coulomb-blockade staircase is found for large tunneling amplitudes. At the degeneracy points, we obtain two-channel Kondo behavior directly from the Coulomb-blockade Hamiltonian, without the restriction to two charge configurations or the introduction of an effective cutoff.

cond-mat.mes-hall

Enhancement of the Two-channel Kondo Effect in Single-Electron boxes

The charging of a quantum box, coupled to a lead by tunneling through a single resonant level, is studied near the degeneracy points of the Coulomb blockade. Combining Wilson's numerical renormalization-group method with perturbative scaling approaches, the corresponding low-energy Hamiltonian is solved for arbitrary temperatures, gate voltages, tunneling rates, and energies of the impurity level. Similar to the case of a weak tunnel barrier, the shape of the charge step is governed at low temperatures by the non-Fermi-liquid fixed point of the two-channel Kondo effect. However, the associated Kondo temperature TK is strongly modified. Most notably, TK is proportional to the width of the level if the transmission through the impurity is close to unity at the Fermi energy, and is no longer exponentially small in one over the tunneling matrix element. Focusing on a particle-hole symmetric level, the two-channel Kondo effect is found to be robust against the inclusion of an on-site repulsion on the level. For a large on-site repulsion and a large asymmetry in the tunneling rates to box and to the lead, there is a sequence of Kondo effects: first the local magnetic moment that forms on the level undergoes single-channel screening, followed by two-channel overscreening of the charge fluctuations inside the box.

cond-mat.str-el

Noncrossing Approximation for the Anisotropic Kondo Model: Charge Fluctuations in a Quantum Box

The noncrossing approximation (NCA) is generalized to the multi-channel Kondo-spin Hamiltonian with arbitrary anisotropic exchange couplings and an external magnetic field, and applied -- in the framework of Matveev's mapping -- to the charge fluctuations in a single-electron box at the Coulomb blockade. The temperature dependences of the charge step and the capacitance are calculated for a narrow point contact. At low temperatures and close to the degeneracy point, the capacitance line shape exhibits an approximate scaling with U/\sqrt{T}, where U is the deviation in gate voltage from the degeneracy point. This scaling relation is proposed as a sharp experimental diagnostic for the non-Fermi-liquid physics of the system at low temperatures. Both the reliability and shortcomings of the Kondo NCA are discussed in detail. Through comparison with poor-man's scaling, we are able to pinpoint the omission of particle-particle processes as the origin of the NCA flaws. An extended diagrammatic scheme is devised to amend the NCA flaws.

cond-mat.str-el

Measuring the Out-of-Equilibrium Splitting of the Kondo Resonance

An experiment is proposed to measure the out-of-equilibrium splitting of the Kondo resonance in an ultrasmall quantum dot, by adding a third, weakly coupled lead to the standard two-lead quantum-dot system, and sweeping the chemical potential of that lead. Fixing the voltage bias between the source and drain leads, we show that the differential conductance for the current through the third lead traces the out-of-equilibrium dot density of states (DOS) for the two-lead system. This enables one to measure the dot DOS in the presence of an applied voltage bias. We show that this method is robust, and extends also to the case where the coupling to the third lead is no longer weak.

cond-mat.str-el