arXiv subjects

Eric Yue Ma

Publications and source records attributed to Eric Yue Ma.

6 recordsLinked to original sources

arXiv2021

Intrinsic one-dimensional conducting channels in the Kondo insulator SmB6

Since its discovery as a Kondo insulator 50 years ago, SmB6 recently received a revival of interest due to detection of unexpected quantum oscillations in the insulating state, discovery of disorder-immune bulk transport, and proposals of correlation-driven topological physics. While recent transport results attribute the anomalous low temperature conduction to two-dimensional surface states, important alternatives, such as conduction channel residing in one-dimensional dislocation lines, have not been adequately explored. Here we study SmB6 with scanning microwave impedance microscopy and uncover evidence for conducting one-dimensional states terminating at surface step edges. These states remain conducting up to room temperature, indicating unusual robustness against scattering and an unconventional origin. Our results bring to light a heretofore undetected conduction route in SmB6 that contributes to the low temperature transport. The unique scenario of intrinsic one-dimensional conducting channels in a highly insulating correlated bulk offers a one-dimensional platform that may host exotic physics.

cond-mat.str-el↗

arXiv2020

Metallic surface states in a correlated d-electron topological Kondo insulator candidate FeSb2

The resistance of a conventional insulator diverges as temperature approaches zero. The peculiar low temperature resistivity saturation in the 4f Kondo insulator (KI) SmB6 has spurred proposals of a correlation-driven topological Kondo insulator (TKI) with exotic ground states. However, the scarcity of model TKI material families leaves difficulties in disentangling key ingredients from irrelevant details. Here we use angle-resolved photoemission spectroscopy (ARPES) to study FeSb2, a correlated d-electron KI candidate that also exhibits a low temperature resistivity saturation. On the (010) surface, we find a rich assemblage of metallic states with two-dimensional dispersion. Measurements of the bulk band structure reveal band renormalization, a large temperature-dependent band shift, and flat spectral features along certain high symmetry directions, providing spectroscopic evidence for strong correlations. Our observations suggest that exotic insulating states resembling those in SmB6 and YbB12 may also exist in systems with d instead of f electrons.

cond-mat.str-el↗

arXiv2018

Optically Coupled Methods for Microwave Impedance Microscopy

Scanning Microwave Impedance Microscopy (MIM) measurement of photoconductivity with 50 nm resolution is demonstrated using a modulated optical source. The use of a modulated source allows for measurement of photoconductivity in a single scan without a reference region on the sample, as well as removing most topographical artifacts and enhancing signal to noise as compared with unmodulated measurement. A broadband light source with tunable monochrometer is then used to measure energy resolved photoconductivity with the same methodology. Finally, a pulsed optical source is used to measure local photo-carrier lifetimes via MIM, using the same 50 nm resolution tip.

physics.ins-det↗

arXiv2017

Measurement of Surface Acoustic Wave Resonances in Ferroelectric Domains by Microwave Microscopy

Surface Acoustic Wave (SAW) resonances were imaged within a closed domain in the ferroelectric LiTaO$_3$ via scanning Microwave Impedance Microscopy (MIM). The MIM probe is used for both SAW generation and measurement, allowing contact-less measurement within a mesoscopic structure. Measurements taken over a range of microwave frequencies are consistent with a constant acoustic velocity, demonstrating the acoustic nature of the measurement.

cond-mat.mtrl-sci↗

arXiv2016

Ubiquitous strong electron phonon coupling at the interface of FeSe/SrTiO3

The high temperature superconductivity in single-unit-cell (1UC) FeSe on SrTiO3 (STO)(001) and the observation of replica bands by angle-resolved photoemission spectroscopy (ARPES) have led to the conjecture that the coupling between FeSe electron and the STO phonon is responsible for the enhancement of Tc over other FeSe-based superconductors1,2. However the recent observation of a similar superconducting gap in FeSe grown on the (110) surface of STO raises the question of whether a similar mechanism applies3,4. Here we report the ARPES study of the electronic structure of FeSe grown on STO(110). Similar to the results in FeSe/STO(001), clear replica bands are observed. We also present a comparative study of STO (001) and STO(110) bare surfaces, where photo doping generates metallic surface states. Similar replica bands separating from the main band by approximately the same energy are observed, indicating this coupling is a generic feature of the STO surfaces and interfaces. Our findings suggest that the large superconducting gaps observed in FeSe films grown on two different STO surface terminations are likely enhanced by a common coupling between FeSe electrons and STO phonons.

cond-mat.supr-con↗

arXiv2015

Unexpected edge conduction in HgTe quantum wells under broken time reversal symmetry

The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs) is considered a milestone in the discovery of topological insulators. The QSH edge states are predicted to allow current to flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction of QSH theory that remains to be experimentally verified is the breakdown of the edge conduction under broken time reversal symmetry (TRS). Here we first establish a rigorous framework for understanding the magnetic field dependence of electrostatically gated QSH devices. We then report unexpected edge conduction under broken TRS, using a unique cryogenic microwave impedance microscopy (MIM), on a 7.5 nm HgTe QW device with an inverted band structure. At zero magnetic field and low carrier densities, clear edge conduction is observed in the local conductivity profile of this device but not in the 5.5 nm control device whose band structure is trivial. Surprisingly, the edge conduction in the 7.5 nm device persists up to 9 T with little effect from the magnetic field. This indicates physics beyond simple QSH models, possibly associated with material- specific properties, other symmetry protection and/or electron-electron interactions.

cond-mat.mes-hall↗