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Erik Chen

Publications and source records attributed to Erik Chen.

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Review of germanium-silicon single-photon avalanche diodes

While it took about a decade for a germanium (Ge) thin film grown on a silicon (Si) substrate to be successfully applied as a detector material for high-speed optical fiber communication application, it took about another decade to further expand its usage as a sensor material for active optical sensing and imaging applications. In this paper, we shall review the progress of a shortwave infrared (SWIR) single-photon detection (SPD) with germanium-silicon (GeSi) single-photon avalanche diode (SPAD), ranging from the first demonstration at cryogenic temperature (Z. Lu et al., 2011) to the recent demonstration at room temperature (N. Na et al, 2024). Potential new applications will also be discussed.

physics.ins-det

Implementation of transformer-based LLMs with large-scale optoelectronic neurons on a CMOS compatible platform

The recent rapid deployment of datacenter infrastructures for performing large language models (LLMs) and related artificial intelligence (AI) applications in the clouds is predicted to incur an exponentially growing energy consumption in the near-term future. In this paper, we propose and analyze the implementation of the transformer model, which is the cornerstone of the modern LLMs, with novel large-scale optoelectronic neurons (OENs) constructed over a complementary metal-oxide-semiconductor (CMOS) compatible platform. With all of the required optoelectronic devices and electronic circuits integrated in a chiplet only about 2 cm by 3 cm in size, 175 billon parameters in the case of GPT-3 are shown to perform inference at an unprecedented speed of 12.6 POPS using only 40 nm CMOS process node, orchestrated by an optoelectronic version of systolic array with no data skew and negligible propagation delay, along with a high power efficiency of 74 TOPS/W and a high area efficiency of 19 TOPS/mm2. The influence of the quantization formats and the hardware induced errors are numerically investigated, and are shown to have a minimal impact. Our study presents a new yet practical path toward analog neural processing units (NPUs) to complement existing digital processing units.

cs.ET

Room-temperature photonic quantum computing in integrated silicon photonics with germanium-silicon single-photon avalanche diodes

Most, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) based on niobium (Nb) operated at a temperature < 4 K. This paper proposes and analyzes 300 K waveguide-integrated germanium-silicon (GeSi) single-photon avalanche diodes (SPADs) based on the recently demonstrated normal-incidence GeSi SPADs operated at room temperature, and shows that their performance is competitive against that of SNSPDs in a series of metrics for PQC with a reasonable time-gating window to resolve the issue of dark-count rate (DCR). These GeSi SPADs become photon-number-resolving avalanche diodes (PNRADs) by deploying a spatially-multiplexed M-fold-waveguide array of M GeSi SPADs. Using on-chip waveguided spontaneous four-wave mixing (SFWM) sources and waveguided field-programmable interferometer mesh (FPIM) circuits, together with the high-metric SPADs and PNRADs, high-performance quantum computing at room temperature is predicted for this PQC architecture.

quant-ph