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Erik Johnson

Publications and source records attributed to Erik Johnson.

15 recordsLinked to original sources

Characterizing an inverse Compton X-ray source and determining its electron beam parameters using a genetic algorithm

Inverse Compton X-ray sources are laboratory-scale devices providing quasi-monochromatic synchrotron radiation which is generated by laser photons Compton-scattering off highly relativistic electrons. Since the shape and width of the X-ray spectrum are determined by the properties of the colliding beams, these must be carefully optimised. However, device compactness limits the space for diagnostics, rendering a complete characterisation challenging, especially if an electron storage ring is combined with a laser enhancement cavity. Here, a framework for laser, electron and X-ray beam parameter determination is proposed to address this issue. First, methods for determining the laser- and X-ray parameters are presented. Knowing these, electron beam parameters are retrieved from the shape of the X-ray spectrum. To this end, an analytical physical model enabling a rapid calculation of inverse Compton scattering spectra is developed and combined with a genetic algorithm. This strategy's effectiveness is demonstrated by applying the concept at the Munich Compact Light Source, a storage ring-based inverse Compton X-ray source facility. Since the analytical model is computationally very inexpensive, the proposed framework could enable real-time monitoring of inverse Compton X-ray sources or be used as a non-invasive diagnostic based on a single spectrum for the electron beam emittance of storage rings or accelerators.

physics.acc-ph

Superconductivity and parity preservation in as-grown In islands on InAs nanowires

We report in-situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centred crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap ~ 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields ~ 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.

cond-mat.mes-hall

Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. We present a crystal growth platform -- based on three-dimensional structuring of growth substrates -- which enables synthesis of semiconductor nanowire hybrids with in-situ patterned superconductor shells. This platform eliminates the need for etching, thereby enabling full freedom in choice of hybrid constituents. We realise and characterise all the most frequently used architectures in superconducting hybrid devices, finding increased yield and electrostatic stability compared to etched devices, along with evidence of ballistic superconductivity. In addition to aluminium, we present hybrid devices based on tantalum, niobium and vanadium. This is the submitted version of the manuscript. The accepted, peer reviewed version is available from Advanced Materials: http://doi.org/10.1002/adma.201908411 Previous title: Shadow lithography for in-situ growth of generic semiconductor/superconductor devices

cond-mat.mes-hall

Epitaxial Pb on InAs nanowires

Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable conditions for heterostructure formation between materials with the desired inherent properties. Here, we harness increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single crystal, atomically flat Pb films along the entire nanowire. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, thereby more than doubling the available parameter space. Additionally, InAs/Pb island devics exhibit magnetic field-driven transitions from Cooper pair to single electron charging; a pre-requisite for use in topological quantum computation. Introducing semiconductor-Pb hybrids potentially enables access to entirely new regimes for an array of quantum systems.

cond-mat.mes-hall

Improving performance of inverse Compton sources through laser chirping

We present a new paradigm for computation of radiation spectra in the non-linear regime of operation of inverse Compton sources characterized by high laser intensities. The resulting simulations show an unprecedented level of agreement with the experiments. Increasing the laser intensity changes the longitudinal velocity of the electrons during their collision, leading to considerable non-linear broadening in the scattered radiation spectra. The effects of such ponderomotive broadening are so deleterious that most inverse Compton sources either remain at low laser intensities or pay a steep price to operate at a small fraction of the physically possible peak spectral output. This ponderomotive broadening can be reduced by a suitable frequency modulation (also referred to as "chirping", which is not necessarily linear) of the incident laser pulse, thereby drastically increasing the peak spectral density. This frequency modulation, included in the new code as an optional functionality, is used in simulations to motivate the experimental implementation of this transformative technique.

physics.acc-ph

Impact of charged species transport coefficients on self-bias voltage in an electrically asymmetric RF discharge

In this paper, we use a fluid model to simulate the excitation of a hydrogen radio-frequency discharge, and employ tailored voltage waveforms to assess the effect of charged species transport properties. Results of the fluid simulation are compared with experimental data and previous results obtained with a hybrid model. Several expressions for electron and ion transport coefficients are compared, and their impact on the self-bias potential is studied. The self-bias is shown to be insensitive to the choice of electron transport coefficients, while remarkably sensitive to variations in ion mobility. Besides, our results show that fluid models can be competitive with hybrid models, provided self-consistent ion transport models and rate constants are used.

physics.plasm-ph

Multi frequency matching for voltage waveform tailoring

Customized voltage waveforms composed of a number of frequencies and used as the excitation of radio-frequency plasmas can control various plasma parameters such as energy distribution functions, homogeneity of the ionflux or ionization dynamics. So far this technology, while being extensively studied in academia, has yet to be established in applications. One reason for this is the lack of a suitable multi-frequency matching network that allows for maximum power absorption for each excitation frequency that is generated and transmitted via a single broadband amplifier. In this work, a method is introduced for designing such a network based on network theory and synthesis. Using this method, a circuit simulation is established that connects an exemplary matching network to an equivalent circuit plasma model of a capacitive radio-frequency discharge. It is found that for a range of gas pressures and number of excitation frequencies the matching conditions can be satisfied, which proves the functionality and feasibility of the proposed concept. Based on the proposed multi-frequency impedance matching, tailored voltage waveforms can be used at an industrial level.

physics.plasm-ph

Engineering Hybrid Epitaxial InAsSb/Al Nanowire Materials for Stronger Topological Protection

The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zincblende InAs$_{1-x}$Sb$_{x}$ nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies \cite{winkler2016topological}. We show that the epitaxial InAsSb/Al interfaces allows for a hard induced superconducting gap and 2$e$ transport in Coulomb charging experiments, similar to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective $g$-factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zincblende structure.

cond-mat.mes-hall

Laser Pulsing in Linear Compton Scattering

Previous work on calculating energy spectra from Compton scattering events has either neglected considering the pulsed structure of the incident laser beam, or has calculated these effects in an approximate way subject to criticism. In this paper, this problem has been reconsidered within a linear plane wave model for the incident laser beam. By performing the proper Lorentz transformation of the Klein-Nishina scattering cross section, a spectrum calculation can be created which allows the electron beam energy spread and emittance effects on the spectrum to be accurately calculated, essentially by summing over the emission of each individual electron. Such an approach has the obvious advantage that it is easily integrated with a particle distribution generated by particle tracking, allowing precise calculations of spectra for realistic particle distributions in collision. The method is used to predict the energy spectrum of radiation passing through an aperture for the proposed Old Dominion University inverse Compton source. Many of the results allow easy scaling estimates to be made of the expected spectrum.

physics.acc-ph

Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires

Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the GaInAs/InAs interfaces and a higher Ga concentration for the early grown GaInAs segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.

cond-mat.mes-hall

Advances in the theory of III-V Nanowire Growth Dynamics

Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III_V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.

cond-mat.mes-hall

The LCFIVertex package: vertexing, flavour tagging and vertex charge reconstruction with an ILC vertex detector

The precision measurements envisaged at the International Linear Collider (ILC) depend on excellent instrumentation and reconstruction software. The correct identification of heavy flavour jets, placing unprecedented requirements on the quality of the vertex detector, will be central for the ILC programme. This paper describes the LCFIVertex software, which provides tools for vertex finding and for identification of the flavour and charge of the leading hadron in heavy flavour jets. These tools are essential for the ongoing optimisation of the vertex detector design for linear colliders such as the ILC. The paper describes the algorithms implemented in the LCFIVertex package, as well as the scope of the code and its performance for a typical vertex detector design.

physics.ins-det

Finite size melting of spherical solid-liquid aluminium interfaces

We have investigated the melting of nano-sized cone shaped aluminium needles coated with amorphous carbon using transmission electron microscopy. The interface between solid and liquid aluminium was found to have spherical topology. For needles with fixed apex angle, the depressed melting temperature of this spherical interface, with radius $R$, was found to scale linearly with the inverse radius $1/R$. However, by varying the apex angle of the needles we show that the proportionality constant between the depressed melting temperature and the inverse radius changes significantly. This lead us to the conclusion that the depressed melting temperature is not controlled solely by the inverse radius $1/R$. Instead we found a direct relation between the depressed melting temperature and the ratio between the solid-liquid interface area and the molten volume.

cond-mat.mtrl-sci

Surface and bulk melting of small metal clusters

We present an analytical solution to the two-parabola Landau model, applied to melting of metal particles with sizes in the nanoscale range. The results provide an analytical understanding of the recently observed pseudo-crystalline phase of nanoscale Sn particles. Liquid skin formation as a precursor of melting is found to occur only for particles with radii, greater than an explicitly given critical radius. The size effect of the melting temperature and the latent heat has been calculated and quantitative agreement with experiments on Sn particles was found.

cond-mat.mtrl-sci

Rapidity Dependence of Elliptic Flow at RHIC

The measured elliptic flow (v2) of identified particles as a function of pT and centrality at RHIC suggests the created medium in Au+Au collisions achieves early local thermal equilibrium that is followed by hydrodynamic expansion. It is not known if the eta dependence on v2 is a general feature of elliptic flow or reflects other changes in the particle spectra in going from mid-rapidity to foward rapidities. The BRAHMS experiment provides a unique capability compared to the other RHIC experiments to measure v2 for identified particles over a wide rapidity range. From Run 4 Au+Au collision at sqrt{s_{NN}} = 200GeV, identified elliptic flow is studied using the BRAHMS spectrometers, which cover 0<eta<3.4. The BRAHMS multiplicity array is used to determine the v2 event plane for the identified particle elliptic flow and to measure the pT-integrated flow for charged hadrons.

nucl-ex