arXiv subjects

Erik Piatti

Publications and source records attributed to Erik Piatti.

At least 19 recordsLinked to original sources

arXiv2025

Direct evidence for two-gap superconductivity in hydrogen-intercalated titanium diselenide

Transition-metal dichalcogenides (TMDs) offer an extremely rich material platform in the exploration of unconventional superconductivity. The unconventional aspects include exotic coupling mechanisms such as the Ising pairing, a complex interplay with other electronic orders such as charge-density waves (CDWs), symmetry-breaking and topological effects, and non-trivial gap structures such as multi-gap and possible nodal phases. Among TMDs, titanium diselenide (1$T$-TiSe$_2$) is one of the most studied and debated cases. Hints to an anomalous structure of its superconducting order parameter have emerged over the years, possibly linked to its spatial texturing in real and reciprocal space due to the presence of a 2$\times$2$\times$2 CDW phase, or to a pressure-driven multi-band Fermi surface. However, a direct evidence for a non-trivial structure of the superconducting gap in this material is still lacking. In this work, we bring the first evidence for a two-gap structure in the recently-discovered H-intercalated TiSe$_2$ superconductor (with T$_c \simeq 3.6$ K) by an extensive experimental study that combines magnetotransport measurements, point-contact spectroscopy and scanning tunnel spectroscopy. We show that the temperature dependence of the upper critical field (for $\vec B \parallel c$) as well as the shape of the point-contact and tunneling spectra strongly suggest the existence of two distinct superconducting gaps, and can indeed all be fitted in a self-consistent way with the same gap amplitudes $\Delta_1 = 0.26 \pm 0.12$ meV and $\Delta_2 =0.62 \pm 0.18$ meV.

cond-mat.supr-con↗

arXiv2024

Facile synthesis of palladium hydride via ionic gate-driven protonation using a deep eutectic solvent

Developing novel protocols for hydrogen (H) loading is crucial for furthering the investigation of hydrides as potential high-temperature superconductors at lower pressures compared to recent discoveries. Ionic gating-induced protonation (IGP) has emerged as a promising technique for H loading due to its inherent simplicity, but it can be limited in the maximum density of injected H when ionic liquids are used as a gating medium. Additionally, most ionic liquids are limited by high production costs, complex synthesis, and potential toxicity. Here, we demonstrate that large H concentrations can be successfully injected in both palladium (Pd) bulk foils and thin films (up to a stoichiometry PdH$_{0.89}$) by using a deep eutectic solvent (DES) choline chloride-glycerol 1:3 as gate electrolyte and applying gate voltages in excess of the cathodic stability limit. The attained H concentrations are large enough to induce superconductivity in Pd, albeit with an incomplete resistive transition which suggests a strongly inhomogeneous H incorporation in the Pd matrix. This DES-based IGP protocol can be used as a guideline for maximizing H loading in different materials, although specific details of the applied voltage profile might require adjustments based on the material under investigation.

cond-mat.mtrl-sci↗

arXiv2024

Superconductivity of Co-Doped CaKFe4As4 Investigated via Point-Contact Spectroscopy and London Penetration Depth Measurements

The iron-based superconductors (IBSs) of the recently discovered 1144 class, unlike many other IBSs, display superconductivity in their stoichiometric form and are intrinsically hole doped. The effects of chemical substitutions with electron donors are thus particularly interesting to investigate. Here, we study the effect of Co substitution in the Fe site of CaKFe$_4$As$_4$ single crystals on the critical temperature, on the energy gaps, and on the superfluid density by using transport, point-contact Andreev-reflection spectroscopy (PCARS), and London penetration depth measurements. The pristine compound (T$_\mathrm{c}\simeq$ 36 K) shows two isotropic gaps whose amplitudes ($Δ_1$ = 1.4$-$3.9 meV and $Δ_2$ = 5.2$-$8.5 meV) are perfectly compatible with those reported in the literature. Upon Co doping (up to $\approx$7% Co), T$_\mathrm{c}$ decreases down to $\simeq$ 20 K, the spin-vortex-crystal order appears, and the low-temperature superfluid density is gradually suppressed. PCARS and London penetration depth measurements perfectly agree in demonstrating that the nodeless multigap structure is robust upon Co doping, while the gap amplitudes decrease as a function of T$_\mathrm{c}$ in a linear way with almost constant values of the gap ratios 2$Δ_i$/k$_\mathrm{B}$T$_\mathrm{c}$.

cond-mat.supr-con↗

arXiv2024

Unusually weak irradiation effects in anisotropic iron-based superconductor RbCa2Fe4As4F2

We report on the effects of 3.5 MeV proton irradiation in RbCa$_2$Fe$_4$As$_4$F$_2$, an iron-based superconductor with unusual properties in between those of the pnictides and of the cuprate high-temperature superconductors. We studied how structural disorder introduced by ion bombardment affects the critical temperature, superfluid density and gap values by combining a coplanar waveguide resonator technique, electric transport measurements and point-contact Andreev-reflection spectroscopy. We find an unusually weak dependence of the superconducting properties on the amount of disorder in this material when compared to other iron-based superconductors under comparable irradiation conditions. The nodal multigap state exhibited by pristine RbCa$_2$Fe$_4$As$_4$F$_2$ is also robust against proton irradiation, with a two-band $d-d$ model being the one that best fits the experimental data.

cond-mat.supr-con↗

arXiv2023

Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2

Hydrogen (H) plays a key role in the near-to-room temperature superconductivity of hydrides at megabar pressures. This suggests that H doping could have similar effects on the electronic and phononic spectra of materials at ambient pressure as well. Here, we demonstrate the non-volatile control of the electronic ground state of titanium diselenide (1T-TiSe$_2$) via ionic liquid gating-driven H intercalation. This protonation induces a superconducting phase, observed together with a charge-density wave through most of the phase diagram, with nearly doping-independent transition temperatures. The H-induced superconducting phase is possibly gapless-like and multi-band in nature, in contrast with those induced in TiSe$_2$ via copper, lithium, and electrostatic doping. This unique behavior is supported by ab initio calculations showing that high concentrations of H dopants induce a full reconstruction of the bandstructure, although with little coupling between electrons and high-frequency H phonons. Our findings provide a promising approach for engineering the ground state of transition metal dichalcogenides and other layered materials via gate-controlled protonation.

cond-mat.supr-con↗

arXiv2023

Cluster charge-density-wave glass in hydrogen-intercalated TiSe$_{2}$

The topotactic intercalation of transition-metal dichalcogenides with atomic or molecular ions acts as an efficient knob to tune the electronic ground state of the host compound. A representative material in this sense is 1$T$-TiSe$_{2}$, where the electric-field-controlled intercalations of lithium or hydrogen trigger superconductivity coexisting with the charge-density wave phase. Here, we use the nuclear magnetic moments of the intercalants in hydrogen-intercalated 1$T$-TiSe$_{2}$ as local probes for nuclear magnetic resonance experiments. We argue that fluctuating mesoscopic-sized domains nucleate already at temperatures higher than the bulk critical temperature to the charge-density wave phase and display cluster-glass-like dynamics in the MHz range tracked by the $^{1}$H nuclear moments. Additionally, we observe a well-defined independent dynamical process at lower temperatures that we associate with the intrinsic properties of the charge-density wave state. In particular, we ascribe the low-temperature phenomenology to the collective phason-like motion of the charge-density wave being hindered by structural defects and chemical impurities and resulting in a localized oscillating motion.

cond-mat.str-el↗

arXiv2023

Spectroscopic studies of the superconducting gap in the 12442 family of iron-based compounds

The iron-based compounds of the so-called 12442 family are very peculiar in various respects. They originate from the intergrowth of 122 and 1111 building blocks, display a large in-plane vs. out-of-plane anisotropy, possess double layers of FeAs separated by insulating layers, and are generally very similar to double-layer cuprates. Moreover, they are stoichiometric superconductors because of an intrinsic hole doping. Establishing their superconducting properties, and in particular the symmetry of the order parameter, is thus particularly relevant in order to understand to what extent these compounds can be considered as the iron-based counterpart of cuprates. In this work we review the results of various techniques from the current literature and compare them with ours, obtained in Rb-12442 by combining point-contact Andreev-reflection spectroscopy and coplanar waveguide resonator measurements of the superfluid density. It turns out that the compound possesses at least two gaps, one of which is certainly nodal. The compatibility of this result with the theoretically allowed gap structures, as well as with the other results in literature, is discussed in detail.

cond-mat.supr-con↗

arXiv2023

A model for critical current effects in point-contact Andreev-reflection spectroscopy

It is well known that point-contact Andreev reflection spectroscopy provides reliable measurements of the energy gap(s) in a superconductor when the contact is in the ballistic or nearly-ballistic regime. However, especially when the mean free path of the material under study is small, obtaining ballistic contacts can be a major challenge. One of the signatures of a Maxwell contribution to the contact resistance is the presence of "dips" in the differential conductance, associated to the sudden appearance of a Maxwell term, in turn due to the attainment of the critical current of the material in the contact region. Here we show that, using a proper model for the $R(I)$ of the material under study, it is possible to fit the experimental curves (without the need of normalization) obtaining the correct values of the gap amplitudes even in the presence of such dips, as well as the temperature dependence of the critical current in the contact. We present a test of the procedure in the case of Andreev-reflection spectra in Mg$_{0.85}$Al$_{0.15}$B$_2$ single crystals.

cond-mat.supr-con↗

arXiv2022

Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$κ$ Dielectric Layer

Ionic gating is a powerful technique for tuning the physical properties of a material via electric field-induced charge doping, but is prone to introduce extrinsic disorder and undesired electrochemical modifications in the gated material beyond pure electrostatics. Conversely, reversible, volatile and electrostatic modulation is pivotal in the reliable design and operation of novel device concepts enabled by the ultrahigh induced charge densities attainable via ionic gating. Here we demonstrate a simple and effective method to achieve reversible and volatile gating of surface-sensitive ultrathin niobium nitride films via controlled oxidation of their surface. The resulting niobium oxide encapsulation layer exhibits a capacitance comparable to that of non-encapsulated ionic transistors, withstands gate voltages beyond the electrochemical stability window of the gate electrolyte, and enables a fully-reversible tunability of both the normal-state resistivity and the superconducting transition temperature of the encapsulated films. Our approach should be transferable to other materials and device geometries where more standard encapsulation techniques are not readily applicable.

cond-mat.supr-con↗

arXiv2022

Migdal-Eliashberg theory of multi-band high-temperature superconductivity in field-effect-doped hydrogenated (111) diamond

We perform single- and multi-band Migdal-Eliashberg (ME) calculations with parameters exctracted from density functional theory (DFT) simulations to study superconductivity in the electric-field-induced 2-dimensional hole gas at the hydrogenated (111) diamond surface. We show that according to the Eliashberg theory it is possible to induce a high-T$_{\text{c}}$ superconducting phase when the system is field-effect doped to a surface hole concentration of $6\times10^{14}\,$cm$^{-2}$, where the Fermi level crosses three valence bands. Starting from the band-resolved electron-phonon spectral functions $α^2F_{jj'}(ω)$ computed ab initio, we iteratively solve the self-consistent isotropic Migdal-Eliashberg equations, in both the single-band and the multi-band formulations, in the approximation of a constant density of states at the Fermi level. In the single-band formulation, we find T$_{\text{c}}\approx40\,$K, which is enhanced between $4\%$ and $8\%$ when the multi-band nature of the system is taken into account. We also compute the multi-band-sensistive quasiparticle density of states to act as a guideline for future experimental works.

cond-mat.supr-con↗

arXiv2022

Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

Diamond, a well-known wide-bandgap insulator, becomes a low-temperature superconductor upon substitutional doping of carbon with boron. However, limited boron solubility and significant lattice disorder introduced by boron doping prevent attaining the theoretically-predicted high-temperature superconductivity. Here we present an alternative co-doping approach, based on the combination of ionic gating and boron substitution, in hydrogenated thin films epitaxially grown on (111)- and (110)-oriented single crystals. Gate-dependent electric transport measurements show that the effect of boron doping strongly depends on the crystal orientation. In the (111) surface, it strongly suppresses the charge-carrier mobility and moderately increases the gate-induced doping, while in the (110) surface it strongly increases the gate-induced doping with a moderate reduction in mobility. In both cases the maximum total carrier density remains below $2{\cdot}10^{14}\,$cm$^{-2}$, three times lower than the value theoretically required for high-temperature superconductivity. Density-functional theory calculations show that this strongly orientation-dependent effect is due to the specific energy-dependence of the density of states in the two surfaces. Our results allow to determine the band filling and doping-dependence of the hole scattering lifetime in the two surfaces, showing the occurrence of a frustrated insulator-to-metal transition in the (110) surface and of a re-entrant insulator-to-metal transition in the (111) surface.

cond-mat.mes-hall↗

arXiv2022

Anomalous metallic phase in molybdenum disulphide induced via gate-driven organic ion intercalation

Transition metal dichalcogenides exhibit rich phase diagrams dominated by the interplay of superconductivity and charge density waves, which often result in anomalies in the electric transport properties. Here, we employ the ionic gating technique to realize a tunable, non-volatile organic ion intercalation in bulk single crystals of molybdenum disulphide (MoS$_{2}$). We demonstrate that this gate-driven organic ion intercalation induces a strong electron doping in the system without changing the pristine $2H$ crystal symmetry and triggers the emergence of a re-entrant insulator-to-metal transition. We show that the gate-induced metallic state exhibits clear anomalies in the temperature dependence of the resistivity with a natural explanation as signatures of the development of a charge-density wave phase which was previously observed in alkali-intercalated MoS$_{2}$. The relatively large temperature at which the anomalies are observed ($\sim$$150$ K), combined with the absence of any sign of doping-induced superconductivity down to $\sim$$3$ K, suggests that the two phases might be competing with each other to determine the electronic ground state of electron-doped MoS$_2$.

cond-mat.mes-hall↗

arXiv2022

Nodal multigap superconductivity in the anisotropic iron-based compound RbCa2Fe4As4F2

The 12442 compounds are a recently discovered family of iron-based superconductors, that share several features with the cuprates due to their strongly anisotropic structure, but are so far poorly understood. Here, we report on the gap structure and anisotropy of RbCa2(Fe1-xNix)4As4F2 single crystals, investigated by a combination of directional point-contact Andreev-reflection spectroscopy and coplanar waveguide resonator measurements. Two gaps were identified, with clear signatures of d-wave-like nodal structures which persist upon Ni doping, well described by a two-band d-d state with symmetry-imposed nodes. A large London penetration depth anisotropy was revealed, weakly dependent on temperature and fully compatible with the d-d model.

cond-mat.supr-con↗

arXiv2021

Ionic gating in metallic superconductors: A brief review

Ionic gating is a very popular tool to investigate and control the electric charge transport and electronic ground state in a wide variety of different materials. This is due to its capability to induce large modulations of the surface charge density by means of the electric-double-layer field-effect transistor (EDL-FET) architecture, and has been proven to be capable of tuning even the properties of metallic systems. In this short review, I summarize the main results which have been achieved so far in controlling the superconducting (SC) properties of thin films of conventional metallic superconductors by means of the ionic gating technique. I discuss how the gate-induced charge doping, despite being confined to a thin surface layer by electrostatic screening, results in a long-range "bulk" modulation of the SC properties by the coherent nature of the SC condensate, as evidenced by the observation of suppressions in the critical temperature of films much thicker than the electrostatic screening length, and by the pronounced thickness-dependence of their magnitude. I review how this behavior can be modelled in terms of proximity effect between the charge-doped surface layer and the unperturbed bulk with different degrees of approximation, and how first-principles calculations have been employed to determine the origin of an anomalous increase in the electrostatic screening length at ultrahigh electric fields, thus fully confirming the validity of the proximity effect model. Finally, I discuss a general framework - based on the combination of ab-initio Density Functional Theory and the Migdal-Eliashberg theory of superconductivity - by which the properties of any gated thin film of a conventional metallic superconductor can be determined purely from first principles.

cond-mat.supr-con↗

arXiv2020

Superconducting Transition Temperature Modulation in NbN via EDL Gating

We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as $\approx 2.8 \times 10^{15}\,\mathrm{cm}^{-2}$ in the active channel of the devices. We report a reversible modulation of the superconducting transition temperature (either positive or negative depending on the sign of the gate voltage) whose magnitude and sign are incompatible with the confinement of the perturbed superconducting state to a thin surface layer, as would be expected within a naïve screening model.

cond-mat.supr-con↗

arXiv2020

Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels

Gated molybdenum disulphide (MoS2) exhibits a rich phase diagram upon increasing electron doping, including a superconducting phase, a polaronic reconstruction of the bandstructure, and structural transitions away from the 2H polytype. The average time between two charge-carrier scattering events - the scattering lifetime - is a key parameter to describe charge transport and obtain physical insight in the behavior of such a complex system. In this work, we combine the solution of the Boltzmann transport equation (based on ab-initio density functional theory calculations of the electronic bandstructure) with the experimental results concerning the charge-carrier mobility, in order to determine the scattering lifetime in gated MoS2 nanolayers as a function of electron doping and temperature. From these dependencies, we assess the major sources of charge-carrier scattering upon increasing band filling, and discover two narrow ranges of electron doping where the scattering lifetime is strongly suppressed. We indentify the opening of additional intervalley scattering channels connecting the simultaneously-filled K/K' and Q/Q' valleys in the Brillouin zone as the source of these reductions, which are triggered by the two Lifshitz transitions induced by the filling of the high-energy Q/Q' valleys upon increasing electron doping.

cond-mat.mes-hall↗

arXiv2020

Towards the insulator-to-metal transition at the surface of ion-gated nanocrystalline diamond films

Hole doping can control the conductivity of diamond either through boron substitution, or carrier accumulation in a field-effect transistor. In this work, we combine the two methods to investigate the insulator-to-metal transition at the surface of nanocrystalline diamond films. The finite boron doping strongly increases the maximum hole density which can be induced electrostatically with respect to intrinsic diamond. The ionic gate pushes the conductivity of the film surface away from the variable-range hopping regime and into the quantum critical regime. However, the combination of the strong intrinsic surface disorder due to a non-negligible surface roughness, and the introduction of extra scattering centers by the ionic gate, prevents the surface accumulation layer to reach the metallic regime.

cond-mat.mtrl-sci↗

arXiv2020

Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS2 nanolayers

Gate-induced superconductivity at the surface of nanolayers of semiconducting transition metal dichalcogenides (TMDs) has attracted a lot of attention in recent years, thanks to the sizeable transition temperature, robustness against in-plane magnetic fields beyond the Pauli limit, and hints to a non-conventional nature of the pairing. A key information necessary to unveil its microscopic origin is the geometry of the Fermi surface hosting the Cooper pairs as a function of field-effect doping, which is dictated by the filling of the inequivalent valleys at the K/K$^{\prime}$ and Q/Q$^{\prime}$ points of the Brillouin Zone. Here, we achieve this by combining Density Functional Theory calculations of the bandstructure with transport measurements on ion-gated 2H-MoS$_{2}$ nanolayers. We show that, when the number of layers and the amount of strain are set to their experimental values, the Fermi level crosses the bottom of the high-energy valleys at Q/Q$^{\prime}$ at doping levels where characteristic kinks in the transconductance are experimentally detected. We also develop a simple 2D model which is able to quantitatively describe the broadening of the kinks observed upon increasing temperature. We demonstrate that this combined approach can be employed to map the dependence of the Fermi surface of TMD nanolayers on field-effect doping, detect Lifshitz transitions, and provide a method to determine the amount of strain and spin-orbit splitting between sub-bands from electric transport measurements in real devices.

cond-mat.mes-hall↗