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Erika N. Lima

Publications and source records attributed to Erika N. Lima.

7 recordsLinked to original sources

Beyond Hexagonal Boron Nitride: First-Principles Study of Pentaoctite-BN and Pop-BN Monolayers

We investigate two novel non-hexagonal boron nitride monolayers, pentaoctite-BN (PO-BN) and pop-BN (PP-BN), using first-principles calculations. Their structural, electronic, mechanical, vibrational, thermal, and optical properties are systematically analyzed to assess their stability and potential applications. Despite being metastable with respect to hexagonal BN, both polymorphs satisfy the criteria for dynamical, mechanical, and thermal stability, indicating that they are viable two-dimensional materials. Both systems are indirect-gap semiconductors whose electronic states near the band edges are dominated by out-of-plane pz orbitals. Their distinct pentagon-octagon ring networks also give rise to different in-plane elastic anisotropies. Many-body optical calculations reveal strong excitonic effects and pronounced polarization-dependent optical absorption, with lattice engineering shifting the optical response from the ultraviolet toward the visible and infrared regions. These findings demonstrate that engineering non-hexagonal lattice architectures provides an effective strategy for tuning the electronic and optical properties of two-dimensional BN, highlighting PO-BN and PP-BN as promising candidates for future optoelectronic and photonic applications.

cond-mat.mtrl-sci

Descriptor-Based Classification of Interfacial Electronic Coupling in Janus XP3-Based 2D Heterostructures

Understanding and controlling interfacial electronic coupling in two-dimensional (2D) heterostructures is essential for designing functional materials for electronic, optoelectronic, and catalytic applications. Here, we investigate vertical heterobilayers constructed from two distinct XP3 monolayers (X = As, Ge, Sb, Bi, Sn, Al, Ga, and Pb) using first-principles density functional theory. The resulting Janus heterobilayers are energetically favorable and elastically stable, with electronic band gaps ranging from metallic and near-metallic to semiconducting regimes. Interlayer interactions induce significant band renormalization, including transitions between type I and type II alignment upon structural relaxation. To rationalize these effects, we establish a descriptor-based framework based on the metal metal interlayer distance, interfacial electron localization, and Bader charge redistribution. This combined analysis discriminates vdW-like, polar covalent, and ionic interaction regimes, with systematic trends governed by the average atomic number of the constituent elements. Optical absorption calculations indicate visible-to-near-infrared activity in selected systems, and band-edge alignment identifies promising candidates for selective redox processes. Overall, the proposed descriptor-based strategy provides a physically grounded route for identifying and engineering interfacial coupling in XP3 heterostructures and can be extended to other classes of two-dimensional material interfaces.

cond-mat.mtrl-sci

First-principles study of metal-biphenylene interfaces: structural, electronic, and catalytic properties

We employ first-principles density functional theory (DFT) calculations to investigate the structural, electronic, and catalytic properties of biphenylene supported on various metal substrates. The substrates considered are the (111) surfaces of Ag, Au, Ni, Pd, Pt, Cu, Al, and the Cu$_3$Au alloy. Our results reveal how the interaction between biphenylene and the substrate governs its stability, degree of corrugation, electronic hybridization, and interfacial charge transfer. In particular, we observe a clear trend where weakly interacting metals preserve the intrinsic features of biphenylene, while more reactive substrates lead to significant structural and electronic modifications. We further evaluate the hydrogen evolution reaction (HER) activity of these systems, showing that certain metal supports, especially Pd, Pt, Ag, and Cu, can enhance the catalytic performance of biphenylene. Notably, Ag and Cu combine good catalytic activity with lower cost and chemical stability, offering a promising balance for practical applications. These findings provide insights into the design of biphenylene-metal interfaces, supporting their use in next-generation electronic and catalytic devices.

cond-mat.mtrl-sci

Group-IV Pentaoctite: A New 2D Material Family

This study investigates the structural, mechanical, and electronic properties of novel two-dimensional (2D) pentaoctite (PO) monolayers composed of group-IV elements (PO-C, PO-Si, PO-Ge, and PO-Sn) using first-principles calculations. Stability is explored through phonon spectra and ab initio molecular dynamics simulations, confirming that all proposed structures are dynamically and thermally stable. Mechanical analysis shows that PO-C monolayers exhibit exceptional rigidity, while the others demonstrate greater flexibility, making them suitable for applications in foldable materials. The electronic properties show semimetallic behavior for PO-C and metallic behavior for PO-Si, while PO-Ge and PO-Sn possess narrow band gaps, positioning them as promising candidates for semiconductor applications. Additionally, PO-C exhibits potential as an efficient catalyst for the hydrogen evolution reaction (HER), with strain engineering further enhancing its catalytic performance. These findings suggest a wide range of technological applications, from nanoelectronics and nanomechanics to metal-free catalysis in sustainable energy production.

cond-mat.mes-hall

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS$_2$ Heterostructures at Room Temperature

We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py-Ni$_{81}$Fe$_{19}$) and injected into the graphene/WS$_2$ heterostructure through the spin pumping process. The observed spin-to-charge current conversion in the heterostructure is attributed to inverse Rashba-Edelstein effect (IREE) at the graphene/WS$_2$ interface. Interfacial CT dynamics in this heterostructure was investigated based on the framework of core-hole-clock (CHC) approach. The results obtained from spin pumping and CHC studies show that the spin-to-charge current conversion and charge transfer process are more efficient in the graphene/WS$_2$ heterostructure compared to isolated WS2 and graphene films. The results show that the presence of WS$_2$ flakes improves the current conversion efficiency. These experimental results are corroborated by density functional theory (DFT) calculations, which reveal (i) Rashba spin-orbit splitting of graphene orbitals and (ii) electronic coupling between graphene and WS$_2$ orbitals. This study provides valuable insights for optimizing the design and performance of spintronic devices.

cond-mat.mes-hall

Unveiling the electronic properties of BiP$_3$ triphosphide from bulk to graphene-based heterostructure by first-principles calculations

Triphosphides, with a chemical formula of XP$_3$ (X is a group IIIA, IVA, or VA element), have recently attracted much attention due to their great potential in several applications. Here, using density functional theory calculations, we describe for the first time the structural and electronic properties of the bulk bismuth triphosphide (BiP$_3$). Phonon spectra and molecular dynamics simulations confirm that the 3D crystal of BiP$_3$ is a metal thermodynamically stable with no bandgap. Unlike the bulk, the mono-, bi-, tri-, and tetra-layers of BiP$_3$ are semiconductors with a bandgap ranging from 1.4 to 0.06 eV. However, stackings with more than five layers exhibit metallic behavior equal to the bulk. The results show that quantum confinement is a powerful tool for tuning the electronic properties of BiP$_3$ triphosphide, making it suitable for technological applications. Building on this, the electronic properties of van der Waals heterostructure constructed by graphene (G) and the BiP$_3$ monolayer (m-BiP$_3$) were investigated. Our results show that the Dirac cone in graphene remains intact in this heterostructure. At the equilibrium interlayer distance, the G/m-BiP$_3$ forms an n-type contact with a Schottky barrier height of 0.5 eV. It is worth noting that the SHB in the G/m-BiP$_3$ heterostructure can be adjusted by changing the interlayer distance or applying a transverse electric field. Thus, we show that few-layers BiP$_3$ is an interesting material for realizing nanoelectronic and optoelectronic devices and is an excellent option for designing Schottky nanoelectronic devices.

cond-mat.mtrl-sci

Tuning electronic and optical properties of bismuth monolayers by molecular adsorption

We perform first-principles calculations of electronic and dielectric properties of bismuthene functionalized with small ligands using first-principle calculations. We show that all functionalized structures have topological insulating (TI) behavior with a sizeable gap by calculating the Z$_2$ topological invariant. Furthermore the adsorption of all groups induce a quasi-planar structure to the initially pristine bismuthene structure. Finally we show that the dielectric properties show a large anisotropy with two main in plane absorption peaks.

cond-mat.mtrl-sci